1. A silver halide color photographic light-sensitive material,
which is for use in movie projection,
which comprises:
on a transparent support,
at least three kinds of light-sensitive silver halide emulsion layers that are different from each other in color developability and color sensitivity and which three kinds of layers include at least one yellow color-forming light-sensitive silver halide emulsion layer, at least one cyan color-forming light-sensitive silver halide emulsion layer, and at least one magenta color-forming light-sensitive silver halide emulsion layer, respectively, and
at least one non-light-sensitive hydrophilic colloid layer,
wherein, among the light-sensitive silver halide emulsion layers, the layer nearest to the support includes silver halide emulsion grains having a silver halide composition of silver chlorobromide, silver chloroiodide, silver chloroiodobromide, or silver chloride, each having a silver chloride content of 95% or more by mol,
wherein the silver halide color photographic light-sensitive material further comprises at least one non-light-sensitive hydrophilic colloid layer containing black colloidal silver between the support and the light-sensitive silver halide emulsion layer nearest to the support, and
wherein an amount of Fe in the silver halide color photographic light-sensitive material is 6\xd710\u22125 molm2 or less.
2. The silver halide color photographic light-sensitive material as claimed in claim 1, wherein the amount of Fe in the silver halide color photographic light-sensitive material is 8\xd710\u22126 molm2 or less.
3. The silver halide color photographic light-sensitive material as claimed in claim 1, wherein each of the light-sensitive silver halide emulsion layers includes silver halide emulsion grains having a silver halide composition of silver chlorobromide, silver chloroiodide, silver chloroiodobromide, or silver chloride, each having a silver chloride content of 95% or more by mol.
4. The silver halide color photographic light-sensitive material as claimed in claim 1, wherein the silver halide emulsion layer nearest to the support is adjacent to the non-light-sensitive hydrophilic colloid layer containing the black colloidal silver.
5. The silver halide color photographic light-sensitive material as claimed in claim 1, wherein the coating amount of silver of the black colloidal silver in the silver halide color photographic light-sensitive material is from 0.01 to 2.0 gm2.
6. The silver halide color photographic light-sensitive material as claimed in claim 1, wherein the coating amount of silver of the black colloidal silver in the silver halide color photographic light-sensitive material is from 0.04 to 1.0 gm2.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A communication device comprising:
a first node connected to an antenna;
a transmission unit outputting a signal to the antenna via the first node;
a reception unit having a signal input thereto from the antenna via the first node;
a first switch provided between the first node and the transmission unit; and
a second switch provided between the first node and the reception unit, wherein
the second switch is alternately turned on and off repeatedly,
the reception unit comprises an amplifier amplifying a signal that the transmission unit outputs via the first and second switches and a mixer mixing a signal amplified in the amplifier and a local signal,
the mixer has a leakage signal of the first switch when the first switch is off input thereto, and wherein
the first switch comprises:
a plurality of inductors connected in series between the first node and the transmission unit;
a first n-channel field-effect transistor having a drain thereof connected to an Interconnection point of the plural first Inductors, having a source thereof connected to a reference potential node, and having a voltage higher than a threshold voltage applied to a gate thereof, and
the second switch comprises:
a plurality of second inductors connected in series between the first node and the reception unit; and
a second n-channel field-effect transistor having a drain thereof connected to an interconnection point of the plural second inductors, having a source thereof connected to a reference potential node, and having a voltage higher than a threshold voltage and a voltage lower than the threshold voltage alternately applied to a gate thereof.
2. The communication device according to claim 1, wherein
the first switch comprises a third n-channel field-effect transistor having a source and a drain thereof connected in series between the plural first inductors,
a voltage higher than a threshold voltage is applied to a gate of the third n-channel field-effect transistor,
the second switch comprises a fourth n-channel field-effect transistor having a source and a drain thereof connected in series between the plural second inductors, and
a voltage higher than a threshold voltage and a voltage lower than the threshold voltage are alternately applied to a gate of the fourth n-channel field-effect transistor.
3. The communication device according to claim 1, wherein
the first and second n-channel field-effect transistors are plurally provided respectively, and
a voltage higher than a threshold voltage or a voltage in which a voltage higher than the threshold voltage and a voltage lower than the threshold voltage are alternately repeated is selectively applied to the gate of one of the first n-channel field-effect transistors or the second n-channel field-effect transistors.
4. The communication device according to claim 1, further comprising:
a fifth n-channel field-effect transistor having a drain and a source thereof connected between the first node and a reference potential node, and wherein
in a transmission mode and a reception mode, a voltage lower than a threshold voltage is applied to a gate of the fifth n-channel field-effect transistor, and in an inspection mode, a voltage higher than the threshold voltage is applied to the gate of the fifth n-channel field-effect transistor.
5. A communication device comprising:
a first node connected to an antenna;
a transmission unit outputting a signal to the antenna via the first node;
a reception unit having a signal input thereto from the antenna via the first node;
a first switch provided between the first node and the transmission unit; and
a second switch provided between the first node and the reception unit, wherein
the second switch is alternately turned on and off repeatedly,
the reception unit comprises an amplifier amplifying a signal that the transmission unit outputs via the first and second switches and a mixer mixing a signal amplified in the amplifier and a local signal,
the mixer has a leakage signal of the first switch when the first switch is off input thereto, and wherein
the first switch comprises:
a plurality of first inductors connected in series between the first node and the transmission unit; and
a first n-channel field-effect transistor having a source and a drain thereof connected in series between the plural first inductors, and
a voltage higher than a threshold voltage is applied to a gate of the first n-channel field-effect transistor, and
the second switch comprises:
a plurality of second inductors connected in series between the first node and the reception unit; and
a second n-channel field-effect transistor having a source and a drain thereof connected in series between the plural second inductors, and
a voltage higher than a threshold voltage and a voltage lower than the threshold voltage are alternately applied to a gate of the second n-channel field-effect transistor.