1. A method for treating a diabetic vascular complication comprising administering to a subject in need thereof a therapeutically effective amount of an extract product of a Dioscorea species.
2. The method according to claim 1, wherein the extract product of the Dioscorea species is administered orally.
3. The method according to claim 1, wherein the Dioscorea species is Dioscorea alata L. cv. Phyto characterized by a randomly amplified polymorphic DNA (RAPD) fingerprint comprising the following 14 DNA bands when the genomic DNA of the Dioscorea species is amplified with a primer of SEQ ID NO: 9: 428 bp, 452 bp, 537 bp, 602 bp, 723 bp, 817 bp, 934 bp, 1140 bp, 1242 bp, 1478 bp, 1641 bp, 1904 bp, 2151 bp and 2918 bp, when genomic DNA of the Dioscorea species is amplified with a primer of SEQ ID NO: 9.
4. The method according to claim 1, wherein the extract product of the Dioscorea species is prepared by a process comprising the steps of:
(a) mixing a tuber of the Dioscorea species with an alcohol-based solvent in the presence of acetic acid to obtain an extract composition;
(b) subjecting the extract composition obtained in step (a) to a separating treatment to obtain a soluble fraction; and
(c) removing the solvent from the soluble fraction obtained in step (b) to obtain the extract product of the Dioscorea species.
5. The method according to claim 4, wherein the alcohol-based solvent is a methanol-based solvent, an ethanol-based solvent, or a mixture thereof.
6. The method according to claim 1, wherein the extract product of the Dioscorea species is prepared by a process comprising the steps of:
(a) immersing a tuber of the Dioscorea species in a 1% acetic acid solution;
(b) grinding the acetic acid-treated tuber of the Dioscorea species;
(c) lyophilizing the ground and acetic acid-treated tuber of the Dioscorea species; to produce a ground, lyophilized and, acetic acid-treated tuber of the Dioscorea species;
(d) mixing at least a portion of the ground, lyophilized and acetic acid-treated tuber of the Dioscorea species of step (c) with an alcohol-based solvent in a presence of an about 1% acetic acid solution to obtain an extract composition;
(e) subjecting the extract composition obtained in step (d) to a separating treatment to obtain a soluble fraction; and
(f) removing the solvent from the soluble fraction obtained in step (e) to obtain the extract product of the Dioscorea species.
7. The method according to claim 6, wherein the alcohol-based solvent is a methanol-based solvent, an ethanol-based solvent, or a mixture thereof.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of processing a plurality of packaged electronic chips being connected to one another in a common substrate, the method comprising:
etching the electronic chips;
detecting information indicative of an at least partial removal of an indicator structure following an exposure of the indicator structure embedded within at least a part of the electronic chips and being exposed after the etching has removed chip material above the indicator structure; and
adjusting the processing upon detecting the information indicative of the at least partial removal of the indicator structure.
2. The method according to claim 1, wherein detecting information comprises analyzing volatile matter in an environment of the electronic chips which volatile matter is impacted by an etching product generated by removing material of the indicator structure from the electronic chips by the etching.
3. The method according to claim 2, wherein the analyzed volatile matter is plasma used for plasma etching and being modified by the at least partial removal of the indicator structure.
4. The method according to claim 3, wherein analyzing the plasma is performed by at least one of the group consisting of Optical Emission Spectroscopy, and Coherent Anti Stokes Raman Scattering.
5. The method according to claim 2, wherein the analyzed volatile matter is effluent gas generated when removing material of the indicator structure by plasma etching.
6. The method according to claim 5, wherein analyzing the effluent gas is performed by at least one of the group consisting of Optical Emission Spectroscopy, and Mass Spectroscopy.
7. The method according to claim 1, wherein the indicator structure comprises one of the group consisting of dopant, implanted material, and a deposited layer.
8. The method according to claim 1, wherein the etching is a selective etching so that an etching rate of material of the indicator structure is different from an etching rate of material next to the indicator structure.
9. The method according to claim 1, wherein the plurality of packaged electronic chips being connected to one another in the common substrate comprise a semiconductor wafer being divided into the electronic chips by mold structures as package.
10. The method according to claim 1, wherein adjusting the processing comprises at least one of the group consisting of stopping the etching, modifying an etching rate, modifying an etch parameter, modifying the etch process, and continuing the etching with the same etch conditions or with modified etch conditions for a predefined additional etching time interval.
11. The method according to claim 1, wherein the indicator structure is a continuous or discontinuous indicator layer embedded at a constant depth level within all electronic chips.
12. The method according to claim 1, comprising:
stopping the etching;
subsequently singularizing the electronic chips.
13. A method of processing a plurality of electronic chips being connected to one another by a common substrate, the method comprising:
plasma etching the electronic chips simultaneously;
detecting volatile matter in an environment of the plasma-etched electronic chips to thereby derive information indicative of an exposure of an indicator layer embedded within the electronic chips and being exposed after the etching has removed chip material above the indicator layer, wherein the volatile matter is impacted by the exposure of the indicator layer; and
adjusting the plasma etching upon detecting the exposure of the indicator layer.
14. The method according to claim 13, wherein processing the plurality of electronic chips comprises processing a plurality of electronic chips being packaged by a mold structure.
15. A device for processing a plurality of packaged electronic chips being connected to one another in a common substrate, the device comprising:
etching means configured for etching the electronic chips;
detection means configured for detecting information indicative of an at least partial removal of an indicator structure following an exposure of the indicator structure embedded within at least a part of the electronic chips and being exposed after the etching has removed chip material above the indicator structure; and
control means being supplied with the detected information and being configured for adjusting the processing upon detecting the information indicative of the at least partial removal of the indicator structure.
16. The device according to claim 15, wherein the detection means are configured for detecting the information by analyzing volatile matter in an environment of the electronic chips which volatile matter is impacted by an etching product generated by removing material of the indicator structure from the electronic chips by the etching.
17. The device according to claim 16, wherein the analyzed volatile matter is plasma used for plasma etching and being modified by the least partial removal of the indicator structure.
18. The device according to claim 16, wherein the analyzed volatile matter is effluent gas generated when removing material of the indicator structure by plasma etching.
19. A device for processing a plurality of electronic chips being connected to one another by a common substrate, the device comprising:
a plasma etching unit configured for plasma etching the electronic chips simultaneously;
a detection unit configured for detecting volatile matter in an environment of the plasma-etched electronic chips to thereby derive information indicative of an exposure of an indicator layer embedded within the electronic chips and being exposed after the etching has removed chip material above the indicator layer, wherein the volatile matter is impacted by the exposure of the indicator layer; and
a control unit being supplied with the information and being configured for adapting the processing upon detecting the exposure of the indicator layer.
20. An article, comprising:
a substrate;
a plurality of electronic chips being connected to one another within the substrate;
an indicator layer embedded within the electronic chips;
wherein the indicator layer is configured to be at least partially removable from the electronic chips by plasma etching so that its plasma etching product impacts volatile matter in an environment of the electronic chips so that the exposure of the indicator layer is detectable by analyzing the volatile matter.
21. The article according to claim 20, comprising a mold structure by which the plurality of electronic chips are packaged.
22. The article according to claim 20, wherein the substrate comprises a plate-shaped wafer comprising the plurality of electronic chips as sections of the wafer.
23. The article according to claim 20, wherein the substrate is a plate-shaped mold structure comprising a plurality of recesses each accommodating a respective one of the plurality of electronic chips.
24. The article according to claim 20, wherein the substrate is a plate-shaped mold structure comprising a recess accommodating a wafer comprising the plurality of electronic chips as sections of the wafer.
25. An electronic chip, comprising:
a semiconductor substrate;
at least one integrated circuit component being integrated in the semiconductor substrate;
an indicator layer forming an exterior surface portion of the semiconductor substrate, wherein the indicator layer is configured to be at least partially removable by plasma etching so that its plasma etching product impacts volatile matter in an environment of the semiconductor substrate so that the exposure of the indicator layer is detectable by analyzing the volatile matter;
a mold structure covering at least a part of the semiconductor substrate.