1. A method for manufacturing a semiconductor device, comprising:
forming a fin extending along a first direction on a substrate;
forming a dummy gate stack structure extending along a second direction on the fin;
forming a gate spacer and sourcedrain regions at opposite sides of the dummy gate stack structure in the first direction;
removing the dummy gate stack structure to form a gate trench;
forming a surface layer on the top andor sidewalls of the fin; and
forming a gate stack structure in the gate trench.
2. The method according to claim 1, wherein the surface layer comprises a high mobility material.
3. The method according to claim 2, wherein the high mobility material comprises Ge, GaAs, InP, GaSb, InAs, InSb, SiGe, Si:C, SiGe:C, Strained-Si, GeSn, GeSiSn, or a combination thereof.
4. The method according to claim 2, wherein the surface layer is in a multi-layer structure.
5. The method according to claim 1, wherein the step of forming a gate spacer and sourcedrain regions further comprises:
etching the fin with the gate spacer as a mask to form sourcedrain trenches; and
epitaxially growing raised sourcedrain regions in the sourcedrain trenches.
6. The method according to claim 1, wherein the step of forming a surface layer further comprises:
etching the top andor sidewalls of the fin to form a recess; and
forming the surface layer in the recess by selective epitaxy.
7. The method according to claim 1, wherein after forming the surface layer, the method further comprises forming an interface layer in the gate trench.
8. A semiconductor device, comprising:
a fin extending on a substrate along a first direction;
a gate extending along a second direction across the fin; and
sourcedrain regions and a gate spacer on the fin at opposite sides of the gate,
wherein there is a surface layer on the top andor sidewalls of the fin.
9. The semiconductor device according to claim 8, wherein the surface layer comprises a high mobility material, which comprises Ge, GaAs, InP, GaSb, InAs, InSb, SiGe, Si:C, SiGe:C, Strained-Si, GeSn, GeSiSn, or a combination thereof.
10. The semiconductor device according to claim 8, wherein the surface layer is in a multi-layer structure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. An instrument for arthroscopic suture passing, the instrument comprising:
a shaft having a proximal end and a distal end;
a jaw disposed distally on the shaft and having a needle and a hook;
a handle disposed proximally on the shaft for manipulating the jaw; and
a movable suture shuttle disposed on the distal end of the shaft.
2. The instrument of claim 1, further comprising a spring arm associated with the needle for urging tissue away from the needle.
3. The instrument of claim 1, wherein the shuttle includes a slot for holding suture.
4. The instrument of claim 1, wherein the shuttle has an open position in which suture in the slot is held of away from the hook.
5. The instrument of claim 1, wherein the shuttle has a closed position in which suture in the slot is held away from the hook.
6. The instrument of claim 1, wherein the shuttle is operated between the open position and the closed position by way of a trigger.
7. The instrument of claim 1, wherein the trigger is disposed proximally on the shaft.
8. The instrument of claim 1, wherein the trigger is disposed on the handle.
9. The instrument of claim 1, wherein the distal end of the shaft has a width greater than a width of the needle, the distal end of the shaft having an opening that provides a clearance through which at least a portion of the needle with the hook passes when the jaw is closed.
10. A method of arthroscopic suture passing using an instrument having:
a shaft having a proximal end and a distal end;
a jaw disposed on the distal end and having a needle and a hook;
a handle disposed on the proximal end for manipulating the jaw; and
a movable suture shuttle disposed in the tip of the shaft, the method comprising the steps of:
loading a length of suture into the suture shuttle;
moving the suture with the suture shuttle away from a position of engagement with the needle and hook;
moving the distal end of the instrument toward tissue to be repaired;
advancing the needle through tissue by closing the jaw;
moving the suture shuttle so as to load the suture onto the hook; and opening the jaw and removing the needle from the tissue, thereby pulling the suture through the tissue.
11. The method of claim 10, wherein the suture shuttle includes a slot, and the step of loading a length of suture into the suture shuttle comprises placing the suture into the slot.