What is claimed is:
1. A polishing pad comprising:
a first member comprising a structurally degradable abrasive first material; and,
a second member comprising a second material that is less degradable and less abrasive than said first material.
2. The pad of claim 1, wherein said first member includes a portion that extends beyond said second member.
3. The pad of claim 1, wherein:
said first member includes a first polishing surface; and,
said second member includes a second polishing surface that with said first polishing surface define a polishing face.
4. The pad of claim 1, wherein:
said first member includes a plurality of first sections having first polishing surfaces; and,
said second member includes a plurality of second sections having second polishing surfaces that with said first polishing surfaces define a polishing face.
5. The pad of claim 4, wherein said plurality of first and second sections are provided in an alternating arrangement.
6. The pad of claim 1, wherein:
said second material is more soluble in a solvent than said first material.
7. The pad of claim 6, wherein:
said second material comprises an acrylate polymer; and,
said first material comprises a urethane material containing discrete abrasive particles ranging from 15 nm-1000 nm is size and selected from the group consisting of SiO2, CeO2, Al2O3, Ta2O5, and MnO2.
8. The pad of claim 1, wherein said first material comprises a matrix material containing discrete particles that are more abrasive than said matrix.
9. The pad of claim 8, wherein said discrete particles are selected from the group consisting of SiO2, CeO2, Al2O3, Ta2O5, and MnO2.
10. The pad of claim 8, wherein said matrix material is substantially nonabrasive.
11. The pad of claim 8, wherein said matrix material is abrasive.
12. The pad of claim 1, wherein said second material is substantially nonabrasive.
13. The pad of claim 12, wherein said second material is substantially nondegradable.
14. The pad of claim 1, wherein said second material is substantially nondegradable.
15. The pad of claim 1, wherein said first member comprises a chemically active material.
16. A polishing pad for use in performing chemical mechanical polishing, comprising:
a first member including a plurality of first sections having first polishing surfaces and comprising a first material further comprising an erodible, substantially nonabrasive matrix material containing discrete particles of abrasive material distributed therein; and,
a second member including a plurality of second sections having second polishing surface and comprising a second material that is less erodible and less abrasive than said first material, wherein said first and second polishing surfaces define a polishing face and said second member is removable to allow a portion of said first member containing said first polishing surface to extend beyond said second polishing surface.
17. The pad of claim 16, wherein said first and second members are formed with said first polishing surface extending beyond said second polishing surface.
18. The pad of claim 16, wherein said second material comprises a soluble acrylate polymer.
19. The pad of claim 18, wherein said soluble acrylate polymer is soluble in HClH2O solutions.
20. The pad of claim 18, wherein said soluble acrylate polymer is soluble in a solvent selected from the group consisting of acetone and isopropyl alcohol.
21. The pad of claim 18, wherein said soluble acrylate polymer comprises polymethylmethacrylate.
22. The pad of claim 16, wherein said first material comprises a material selected from the group consisting of urethanes and polyphenyl oxide, and containing discrete abrasive particles ranging from 15 nm-1000 nm in size and selected from the group consisting of SiO2, CeO2, Al2O3, Ta2O5, and MnO2.
23. An apparatus for performing mechanical polishing of a semiconductor wafer surface, comprising:
a polishing pad having a polishing face, wherein said polishing pad further comprises,
a first member having a first polishing surface and comprising a structurally degradable abrasive first material, and,
a second member having a second polishing surface and comprising a second material that is less degradable and less abrasive than said first material, wherein said first and second polishing surfaces define said polishing face;
a wafer support having a support surface, said wafer support being disposed opposite to said pad, such that said polishing face and said support surface are substantially parallel and can be brought within close proximity; and,
a motor connected to provide relative motion between said polishing face and said support surface.
24. The apparatus of claim 23, wherein said first member includes a portion including said first polishing surface that extends beyond said second polishing surface.
25. The apparatus of claim 23, wherein said motor includes,
a support motor to impart motion to said support, and,
a platen motor to impart motion to said pad.
26. The apparatus of claim 23, further comprising a source positioned to dispense liquid from said liquid source between said polishing face and said support surface.
27. The apparatus of claim 23, wherein said source is positioned to dispense liquid through said pad.
28. A method of limiting mechanical abrasion of a surface during polishing, said method comprising:
providing a polishing pad including a first member comprising a first material that is abrasive to a wafer surface and structurally degradable during polishing;
incorporating a second member in the polishing pad comprising a second material that is less degradable and less abrasive than the first material to limit the amount of the first member available to abrade the surface; and,
polishing the wafer surface with the first member.
29. The method of claim 28, further comprising removing a portion of the second member to expose an amount of the first member effective to polish the surface.
30. The method of claim 29, wherein:
said incorporating further comprises incorporating a second member comprising a material that is more soluble in a solvent than the first material; and,
said removing further comprises removing a portion of the second member using the solvent.
31. A method of performing mechanical polishing of a surface, comprising:
providing a polishing pad having a first member comprising a first material that is abrasive to a surface and structurally degradable during polishing that extends beyond a second member comprising a second material that is less degradable and less abrasive than the first material; and,
polishing the surface with the first member.
32. The method of claim 31, wherein said polishing further comprises polishing the surface with the first member until the second member contacts the surface.
33. The method of claim 31, further comprising providing liquid on the surface during said polishing.
34. The method of claim 31, wherein said step of providing comprises:
providing a polishing pad having a first member comprising an abrasive first material that is structurally degradable during polishing, and a second member comprising a second material that is less degradable and less abrasive than the first material; and,
removing a portion of the second member to expose an amount of the first member effective to polish the surface.
35. The method of claim 34, wherein said removing includes chemically stripping the second member.
36. The method of claim 31, wherein said providing further comprises providing an erodible, abrasive first material having a matrix material containing discrete particles of abrasive material distributed throughout and a less erodible.
37. The method of claim 36, wherein said providing a second material further comprises providing a substantially nonerodible second material.
38. The method of claim 37, wherein said providing a second material further comprises providing a substantially nonabrasive second material.
39. The method of claim 31, wherein said providing a second material further comprises providing a substantially nonabrasive second material.
40. A method of performing chemical mechanical polishing of a wafer surface, comprising:
providing a polishing pad having a first member comprising a first material that is abrasive to a wafer surface and erodible in polishing chemicals extending a predetermined distance beyond a second member comprising a second material that is substantially nonerodible in polishing chemicals and substantially nonabrasive to a wafer surface;
dispensing the polishing chemicals onto the wafer surface; and,
polishing the wafer surface with the first member for a period of time sufficient to erode the first member to be substantially flush with the second member.
41. The method of claim 40, wherein said providing includes providing a first member comprising polyurethane containing discrete abrasive particles ranging from 15 nm-1000 nm in size and selected from the group consisting of SiO2, CeO2, Al2O3, Ta2O5, and MnO2 and a second member comprising a soluble polyacrylate.
42. The method of claim 41, further comprising removing a portion of the second member by exposing the polyacrylate material to a HClH2O solution to expose an amount of the first member effective to polish the surface.
43. A method of forming a polishing pad having a polishing face, comprising:
providing a polishing pad having a first member comprising an abrasive first material that is structurally degradable during polishing; and,
incorporating a second member in the polishing pad comprising a second material that is sufficiently less degradable and less abrasive than the first material to limit the amount of the first member available to abrade the surface.
44. The method of claim 43, further comprises removing a portion of the second member to expose an amount of the first member effective to polish the surface.
45. The method of claim 44, wherein:
said incorporating further comprises incorporating a second member comprising a material that is more soluble in a solvent than the first material; and,
said removing further comprises removing a portion of the second member using the solvent.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electronic device comprising, on a first side of a substrate, at least one trench capacitor in a substrate, the trench capacitor including
an alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers, and
set of internal contact pads on the first substrate side, wherein each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate.
2. The electronic device of claim 1, comprising a plurality of trench capacitors, wherein a respective set of internal contact pads is provided with each of the trench capacitors.
3. The electronic device of claim 2, wherein the plurality of capacitors constitute a distributed capacitor structure that has a first capacitor electrode, which is formed by a first number of corresponding electrically conductive layers, at least one conductive layer from each trench capacitor of the distributed capacitor structure, the conductive layers being connected by interconnects between their respective internal contact pads.
4. The electronic device of claim 3, wherein the distributed capacitor structure has at least one a second capacitor electrode, which is formed by a second number of corresponding electrically conductive layers, at least one conductive layer from each trench capacitor of the distributed capacitor structure, the second number of conductive layers being connected by interconnects between their respective internal contact pads.
5. The electronic device of claim 4, wherein at least one first conductive layer forms a first capacitor electrode and at least one second conductive layer forms a second capacitor electrode, wherein the first capacitor electrode is connected with the internal substrate contact pad, and wherein the second capacitor electrode is floating.
6. The electronic device of claim 1, wherein the alternating layer sequence comprises two dielectric layers, two conductive layers and, in addition, either a third conductive layer or the substrate of the trench capacitor in a MIMIM configuration.
7. The electronic device of claim 1, wherein the two dielectric layers differ in a ratio between the respective layer thickness and a respective dielectric constant that is specific for a given material of a respective dielectric layer.
8. The electronic device of claim 7, wherein thickness values of the dielectric layers included in the alternating layer sequence are different from each other.
9. The electronic device of claim 7, wherein dielectric constants of the dielectric layers included in the alternating layer sequence are different from each other.
10. The electronic device of claim 1, wherein the alternating layer sequence comprises at least three dielectric layers and at least three electrically conductive layers, such that the at least three electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least three dielectric layers.
11. The electronic device of claim 1, wherein a switching element is interconnected between two internal contact pads of one set of internal contact pads associated with one trench capacitor, the switching element being configured, in a first switching state, to electrically connect the two internal contact pads with each other and, in a second switching state, to electrically disconnect the two internal contact pads from each other, the switching element having a control input port and being further configured to be in either the first or the second switching state, depending on which of two predefined control signals is applied to the control input port.
12. The electronic device of claim 3, wherein a switching element is interconnected between two internal contact pads of different sets of internal contact pads associated with different trench capacitors, the switching element being configured, in a first switching state, to electrically connect the two internal contact pads with each other and, in a second switching state, to electrically disconnect two the internal contact pads from each other, the switching element having a control input port and being further configured to be in either the first or the second switching state, depending on which of two predefined control signals is applied to the control input port.
13. The electronic device of claim 1, wherein the filled pores have a diameter between 1 and 3 micrometer, and an aspect ratio, defined as the ratio of trench depth over trench diameter, of between 10 and 30.
14. The electronic device of claim 2, which is configured to have a capacitance density of at least 100 nFmm2 and a breakdown voltage of typically between 10 and 70 V.
15. An electronic circuit comprising an electronic device of claim 1.
16. The electronic circuit of claim 13, comprising a charge-pump circuit that includes an electronic device.
17. The electronic circuit of claim 15, which is configured as a DC-to-DC voltage converter.