1. An organic light-emitting diode comprising:
a p-type layer for injecting and transporting holes, the layer comprising an organic semiconducting material formed from small molecules, and
the layer is doped with an inorganic chemical atomic element selected from the group consisting of boron, carbon, silicon, cobalt, nickel, copper, germanium, rhodium, palladium, and antimony.
2. The organic light-emitting diode according to claim 1, wherein a molar ratio between the dopant and the organic semiconducting material is from 11000 to 101, and the molar ratio is chosen to obtain a conductivity of the organic semiconducting material greater than 10\u22127 Scm.
3. The organic light-emitting diode according to claim 1, wherein a thickness of the doped organic semiconducting material layer is greater than or equal to 30 nm.
4. The organic light-emitting diode according to claim 1, wherein the organic semiconducting material layer has a non-doped edge.
5. The organic light-emitting diode according to claim 1, wherein the doped organic semiconducting material layer is adjacent to a non-doped layer of smaller thickness.
6. An organic light-emitting diode comprising:
an anode,
a cathode,
an organic light-emitting layer between the anode and cathode, and
a p-type organic layer between the organic light-emitting layer and the anode;
the p-type layer comprising an organic semiconducting material formed from small molecules, and
the p type layer is doped with an inorganic chemical atomic element selected from the group consisting of boron, carbon, silicon, cobalt nickel, copper, germanium, rhodium, palladium, and antimony.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a gate electrode;
a gate insulating film comprising a silicon nitride oxide film over the gate electrode, a silicon oxynitride film over the silicon nitride oxide film, and a metal oxide film over the silicon oxynitride film;
an oxide semiconductor film over and in contact with the metal oxide film;
a source electrode and a drain electrode over the oxide semiconductor film; and
a protective film over and in contact with the oxide semiconductor film, the source electrode, and the drain electrode,
wherein the oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor,
wherein the oxide semiconductor film is an In\u2014Ga\u2014Zn-based oxide film, and
wherein the metal oxide film is a Ga\u2014Zn-based oxide film.
2. The semiconductor device according to claim 1, wherein the silicon nitride oxide film has a larger thickness than the silicon oxynitride film.
3. The semiconductor device according to claim 1, wherein the metal oxide film has a smaller thickness than the silicon nitride oxide film.
4. The semiconductor device according to claim 1, wherein the oxide semiconductor film includes at least one of oxides of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.
5. The semiconductor device according to claim 1, wherein an average surface roughness of the gate insulating film is less than or equal to 1 nm.
6. A display device comprising a transistor, the transistor comprising:
a gate electrode;
a gate insulating film comprising a silicon nitride oxide film over the gate electrode, a silicon oxynitride film over the silicon nitride oxide film, and a metal oxide film over the silicon oxynitride film;
an oxide semiconductor film over and in contact with the metal oxide film;
a source electrode and a drain electrode over the oxide semiconductor film; and
a protective film over and in contact with the oxide semiconductor film, the source electrode, and the drain electrode,
wherein the oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor,
wherein the oxide semiconductor film is an In\u2014Ga\u2014Zn-based oxide film, and
wherein the metal oxide film is a Ga\u2014Zn-based oxide film.
7. The display device according to claim 6, wherein the silicon nitride oxide film has a larger thickness than the silicon oxynitride film.
8. The display device according to claim 6, wherein the metal oxide film has a smaller thickness than the silicon nitride oxide film.
9. The display device according to claim 6, wherein the display device comprises a liquid crystal element.
10. The display device according to claim 6, wherein the display device comprises an organic electroluminescent element.