1. A process for the production of an organoaluminum precursor compound represented by the formula
wherein R1, R2, R3 and R4 are the same or different and each represents hydrogen or an alkyl group having from 1 to about 3 carbon atoms, and R5 represents an alkyl group having from 1 to about 3 carbon atoms, which process comprises (i) reacting an organodiamine compound with a base material in the presence of a solvent and under reaction conditions sufficient to produce a first reaction mixture comprising an organodiamine salt compound, (ii) preparing a second reaction mixture by adding an aluminum source compound to said first reaction mixture, (iii) heating the second reaction mixture to reflux for a period of time sufficient to produce a third reaction mixture comprising said organoaluminum precursor compound, and (iv) separating said organoaluminum compound from said third reaction mixture.
2. The process of claim 1 wherein the organoaluminum precursor compound yield is 60% or greater.
3. The process of claim 1 wherein the organodiamine compound is selected from dimethylethylethylenediamine, trimethylethylenediamine, triethylethylenediamine, diethylmethylethylenediamine and dimethylpropylethylenediamine.
4. The process of claim 1 wherein the base material is selected from n-BuLi, t-BuLi, MeLi, NaH and CaH.
5. The process of claim 1 wherein the organodiamine salt compound is selected from lithiated dimethylethylethylenediamine, lithiated trimethylethylenediamine, lithiated triethylethylenediamine, lithiated diethylmethylethylenediamine and lithiated dimethylpropylethylenediamine.
6. The process of claim 1 wherein the aluminum source compound is selected from Me2AlCl, Me2AlBr, Me2AlF, Et2AlCl, EtMeAlCl and iPr2AlCl.
7. A mixture comprising (i) an organoaluminum precursor compound represented by the formula
wherein R1, R2, R3 and R4 are the same or different and each represents hydrogen or an alkyl group having from 1 to about 3 carbon atoms, and R5 represents an alkyl group having from 1 to about 3 carbon atoms, and (ii) one or more different organometallic precursor compounds.
8. The mixture of claim 7 wherein the organoaluminum precursor compound is a liquid at 20\xb0 C.
9. The mixture of claim 7 wherein said one or more other organometallic precursor compounds are selected from a hafnium-containing, tantalum-containing or molybdenum-containing organometallic precursor compound.
10. The mixture of claim 7 wherein R1, R2, R3 and R4 are the same or different and each represents hydrogen, methyl, ethyl, n-propyl or isopropyl, and R5 represents methyl, ethyl, n-propyl or isopropyl.
11. The mixture of claim 7 wherein the organoaluminum precursor compound is selected from dimethylethyl ethylenediamine methylaluminum, trimethyl ethylenediamine dimethylaluminum, triethyl ethylenediamine dimethylaluminum, diethylmethyl ethylenediamine dimethylaluminum, dimethylpropyl ethylenediamine dimethylaluminum, and dimethylethyl ethylenediamine diisopropylaluminum.
12. The process of claim 1 wherein the organoaluminum precursor compound is selected from dimethylethyl ethylenediamine methylaluminum, trimethyl ethylenediamine dimethylaluminum, triethyl ethylenediamine dimethylaluminum, diethylmethyl ethylenediamine dimethylaluminum, dimethylpropyl ethylenediamine dimethylaluminum, and dimethylethyl ethylenediamine diisopropylaluminum.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An apparatus interconnecting a PC (personal computer) and a flash memory device, comprising:
a control chip including a RAM (random access memory);
a ROM (read only memory); and
a processor,
wherein the control chip is adapted to program the flash memory device as a main firmware stored with compatible configuration codes, an auxiliary firmware stored with programs of data encryption, flash memory device activation, and data compression, and a data storage segment so as to enable the PC to access the flash memory device via the control chip.
2. The apparatus of claim 1, wherein the main firmware is located in the flash memory device.
3. The apparatus of claim 1, wherein the main firmware is located in the control chip.
4. The apparatus of claim 1, wherein the main firmware is located in the apparatus but externally of the control chip.
5. The apparatus of claim 1, wherein the main firmware is a PROM (programmable read only memory), an EPROM (erasable programmable read only memory), or an EEPROM (electrically erasable programmable read only memory).
6. The apparatus of claim 1, wherein the RAM is a static random access memory (SRAM).
7. In an apparatus including a control chip including a RAM (random access memory), a ROM (read only memory), and a processor, a method comprising the steps of:
interconnecting a PC (personal computer) and a flash memory device by means of the apparatus;
causing the PC to detect the connection of the flash memory device;
causing the PC to enable the processor to read programs from the ROM;
causing the processor to execute the programs to read an ID (identification) segment of the flash memory device for obtaining data about type and capacity of the flash memory device;
sending the type and the capacity of the flash memory device back to the PC;
causing the PC to command the processor to program the flash memory device as one including a first memory segment, a second memory segment, and a data storage segment;
causing the PC to send compatible configuration codes representing the type and the capacity of the flash memory device through the control chip to write into the first memory segment in a fixed form to form a main firmware, and send other programs including data encryption, flash memory device activation, and data compression through the control chip to write into the second memory segment in a fixed form to form an auxiliary firmware;
causing the PC to command the control chip to format the data storage segment;
causing the PC to command the processor to read programs from the main firmware and the auxiliary firmware and store a copy in the RAM; and
causing the processor to execute the programs from the RAM for enabling the PC to access the flash memory device.
8. The method of claim 7, wherein the main firmware is located in the flash memory device.
9. The method of claim 7, wherein the main firmware is located in the control chip.
10. The method of claim 7, wherein the main firmware is located in the apparatus but externally of the control chip.
11. The method of claim 7, wherein the main firmware is a PROM (programmable read only memory), an EPROM (erasable programmable read only memory), or an EEPROM (electrically erasable programmable read only memory).
12. The method of claim 7, wherein the RAM is a static random access memory (SRAM).