1. A semiconductor device fabrication method comprising (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid after the heat treatment of the oxide layer.
2. The semiconductor device fabrication method according to claim 1, wherein the oxide layer used in the step (1) is formed on a substrate bearing an under level electrode.
3. The semiconductor device fabrication method according to claim 1, wherein the Mn-containing perovskite type oxide is defined by the general formula AMnO3 wherein A includes one or more metals selected from the group consisting of La, Pr, Ca, and Sr.
4. The semiconductor device fabrication method according to claim 1, wherein a plurality of upper level electrodes are utilized as the patterned mask layer.
5. The semiconductor device fabrication method according to claim 4, wherein the upper level electrodes are formed of a material containing a noble metal element.
6. The semiconductor device fabrication method according to claim 1, wherein the step (2) is carried out at 200 to 900\xb0 C.
7. The semiconductor device fabrication method according to claim 1, wherein the patterning in step (3) is first conducted by dry etching, and then by wet etching with the etching solution.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1.-15. (canceled)
16. A coextruded annealed heat-shrinkable packaging film comprising a core layer (A) comprising an ethylenevinyl alcohol copolymer, a first outer polyolefin layer (B), a second outer polyolefin layer (C), and at least one inner layer (D) of a copolymer of propylene with butene and optionally ethylene, said film comprising a maximum shrink force in the transverse direction of \u22660.35 Ncm.
17. The film of claim 16, wherein the copolymer of propylene of the at least one inner layer (D) is propylene-butene, propylene-butene-ethylene, or propylene-ethylene-butene.
18. The film of claim 16, wherein said at least one inner layer (D) of a copolymer of propylene with butene comprises the propylene copolymer in an amount of at least about 60%, at least about 70%, between 80-90%, or about 85% of layer (D), while the compliment to 100% is an ethylene copolymer.
19. The film of claim 16, wherein the film further comprises one or two tie layers (E) directly adhered to one or both surfaces of the core layer (A).
20. The film of claim 16, characterized by a maximum shrink force in the transverse direction of \u22660.34 Ncm or \u22660.33 Ncm.
21. The film of claim 16, comprising a residual shrink force between about 0.03 to 0.3 Ncm, about 0.1 to 0.28 Ncm, or about 0.11 to 0.22 Ncm.
22. The film of claim 16, comprising the following layer sequence:
(B)(D)(E)(A)(E)(D)(C),
(B)(E)(A)(E)(D)(E)(C),
(B)(D)(E)(A)(E)(D)(E)(C),
(B)(E)(D)(E)(A)(E)(D)(C),
or
(B)(E)(D)(E)(A)(E)(D)(E)(C).
23. The film of claim 16, wherein the polyolefins for the first outer layer (B) and the second outer layer (C) are independently selected from the group consisting of: ethylene homopolymers, ethylene copolymers, propylene homopolymers, propylene copolymers, and blends thereof.
24. The film of claim 23, wherein the polyolefins for the first outer layer (B) are selected from the group consisting of: ethylene homopolymers, heterogeneous or homogeneous ethylenealpha-olefin copolymers, ethylene-cyclic olefin copolymers, ethylenevinyl acetate copolymers, ethylene-(C1-C4) alkyl acrylate or methacrylate copolymers, ethylene-acrylic acid copolymers, ethylene-methacrylic acid copolymers, ionomers, polypropylene, propylene-ethylene copolymers, propylene-ethylene-(C1-C4)-alpha olefin copolymers, propylene-(C1-C4)-alpha olefin-ethylene copolymers, and blends thereof in any proportion.
25. The film of claim 16, wherein the first outer layer (B) and the second outer layer (C) have the same polymer composition.
26. A method for the manufacture of the film of claim 16, said method comprising:
a. coextruding the resins or blends of resins of the various layers through a coextrusion die;
b. quenching the primary tape thus obtained;
c. reheating the tape at the suitably selected solid state orientation temperature;
d. stretching the tape either monoaxially or biaxially;
e. submitting the oriented film to heat treatment at a temperature of about 70\xb0 C. to about 90\xb0 C. for a time sufficient to induce a decrease of its maximum shrink force in the transverse direction to a value not exceeding 0.35 Ncm; and
f. cooling the annealed film to room temperature.
27. The method of claim 26, wherein the quenched primary tape is irradiated with high energy electrons before being stretched.
28. A method of constructing a flowpack package using the film of claim 16, said method comprising:
a. depositing a product onto a tray;
b. folding the film around a former and longitudinally sealing to form a tube;
c. sealing the leading edge of the tube to form an envelope and flushing the interior of the envelope with a suitably selected gas or gas mixture;
d. positioning the tray inside the envelope;
e. sealing the open end of the envelope to form a closed package; and
f. passing the package into a shrink tunnel to form a flowpack package.
29. A method of constructing a lidded package using the film of claim 16, said method comprising:
a. depositing a product onto a tray comprising a rim or peripheral lip;
b. transporting the tray to a lid sealing station that comprises a lower chamber and an upper chamber;
c. providing a web of film over the top of the tray;
d. closing the upper and lower chambers of the lid sealing station together;
e. replacing the air in between the tray and the lidding film with any suitable gas or gas blend; and
f. sealing the lidding film to the rim or peripheral lip of the tray to form a lidded package.
30. A flowpack package or a tray-lidded package comprising the film of claim 16 as the wrapping film, lidding film, or as a component of the lidding system.