1. A substrate for an organic electronic device comprising:
a base substrate;
a scattering layer which is formed on the base substrate, includes a binder and scattering particles for scattering light, and has an uneven structure formed on a surface thereof opposite the base substrate; and
a planarizing layer which is formed on the scattering layer to planarize an uneven surface of the scattering layer,
wherein a refractive index Na of the scattering particles and a refractive index Nb of the planarizing layer satisfy the expression |Na\u2212Nb|\u22670.3, and the refractive index Na of the scattering particles is in a range of 2.0 to 3.5 and the refractive index Nb of the planarizing layer is in a range of 1.7 to 2.5.
2. The substrate for an organic electronic device of claim 1, wherein the scattering particles are formed on the base substrate in a single-layer structure or a stacked structure including at most 5 layers.
3. The substrate for an organic electronic device of claim 1, wherein the scattering particles have an average diameter of 0.01 \u03bcm to 20 \u03bcm.
4. The substrate for an organic electronic device of claim 1, wherein the binder in the scattering layer is an inorganic binder or an organicinorganic complex binder.
5. The substrate for an organic electronic device of claim 4, wherein the binder in the scattering layer is at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, alumina, and an inorganic or organicinorganic complex based on a siloxane bond.
6. The substrate for an organic electronic device of claim 1, wherein the planarizing layer comprises an inorganic binder or an organicinorganic complex binder.
7. The substrate for an organic electronic device of claim 6, wherein the inorganic binder or the organicinorganic complex binder is at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, alumina, and an inorganic or organicinorganic complex based on a siloxane bond.
8. The substrate for an organic electronic device of claim 6, wherein the planarizing layer further comprises a high-refractive index filler which is at least one selected from the group consisting of alumina, aluminum nitride, zirconium oxide, titanium oxide, cerium oxide, hafnium oxide, niobium pentoxide, tantalum pentoxide, indium oxide, tin oxide, indium tin oxide, zinc oxide, silicon, zinc sulfide, calcium carbonate, barium sulfate and silicon nitride.
9. An organic electronic device having a sequentially stacked structure comprising:
the substrate for an organic electronic device of claim 1;
a first electrode;
an organic layer which comprises a light emitting layer and an electron transfer layer doped with an alkali halide, MgF2 or CaF2, wherein the doped electron transfer layer has a thickness of 40 to 100 nm; and
a second electrode.
10. The organic electronic device of claim 9, wherein the electron transfer layer includes an electron transfer material and an alkali halide, MgF2, or CaF2 with which the electron transfer material is doped, and
the electron transfer material includes a compound containing at least one functional group selected from the group consisting of an imidazole group, an oxazole group, a thiazole group, a quinoline and a phenanthroline group.
11. The organic electronic device of claim 9, wherein the alkali halide is at least one selected from the group consisting of NaF, CsF, LiF, and KF.
12. The organic electronic device of claim 9, wherein the alkali halide, MgF2, or CaF2 has a concentration gradient, depending on the thickness of the electron transfer layer.
13. The organic electronic device of claim 9, wherein introduction and transfer of electrons are simultaneously performed at the electron transfer layer.
14. The organic electronic device of claim 9, further comprising a metal wiring formed between the first electrode and the organic layer.
15. A method of manufacturing the organic electronic device of claim 9, comprising:
forming a first electrode;
forming an organic layer including a light emitting layer on the first electrode; and
forming a second electrode on the organic layer,
wherein the forming of the organic layer includes forming an electron transfer layer doped with an alkali halide, MgF2, or CaF2 to a thickness of 40 to 100 nm.
16. The method of claim 15, wherein the forming of the organic layer includes forming at least one of a hole injection layer, a hole transfer layer, and an electron injection layer on the first electrode in addition to the electron transfer layer.
17. The organic electronic device of claim 9, wherein the doped electron transfer layer has a thickness of 55 to 85 nm.
18. A method of manufacturing the substrate for an organic electronic device of claim 1, comprising:
forming the scattering layer on the base substrate using a coating solution including the binder and the scattering particles; and
forming the planarizing layer on the formed scattering layer to have a planarized surface.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A light-emitting element, comprising:
an anode;
a cathode;
a light-emitting layer between said anode and said cathode; and
at least one of an electron injection layer and an electron transport layer interposed between the anode and the light-emitting layer,
wherein said at least one of said electron layer and said electron transport layer is made of alkali metal-including fullerenes or an organic material doped with alkali metal-including fullerene.
2. A light-emitting element as in claim 1, comprising said electron transport layer, wherein the electron transport layer is alkali metal-including fullerenes or an organic material doped with alkali metal-including fullerene.
3. A light-emitting element as in claim 1 further comprising at least one of a positive-hole injection layer and a positive-hole transport layer interposed between the anode and the light-emitting layer.
4. A light-emitting device in which a plurality of the light-emitting elements claim 3 are arranged in array or matrix state.
5. A display device comprising the light-emitting device in claim 4.
6. An illuminating device comprising the light-emitting device in claim 4.