1. A lighting unit, comprising:
at least one lamp; and
a hollow box;
wherein the hollow box comprises:
a heat-conducting wall in thermal contact with the at least one lamp;
a rear wall extending essentially parallel to the heat-conducting wall and comprising at least one first opening;
a top sidewall comprising at least one second opening disposed closer to the rear wall than to the heat-conducting wall; and
a bottom sidewall comprising at least one third opening disposed closer to the rear wall than to the heat-conducting wall,
wherein the top sidewall and the bottom sidewall are disposed between the rear wall and the heat-conducting wall.
2. The lighting unit as claimed in claim 1, wherein the heat-conductive wall comprises a reflective layer against which the at least one lamp rests.
3. The lighting unit as claimed in claim 2, wherein the reflective layer is one of a coating on the heat-conductive wall or a thin foil.
4. The lighting unit as claimed in claim 1, wherein a side of the heat-conductive wall facing an interior of the hollow box is black.
5. The lighting unit as claimed in claim 1, wherein the rear wall comprises at least one projection protruding into an interior of the hollow box.
6. The lighting unit as claimed in claim 1, wherein a total area of the at least one first opening is smaller than a remaining area of the rear wall.
7. The lighting unit as claimed in claim 1, wherein the at least one first opening, the at least one second opening, and the at least one third opening are fashioned respectively as slots.
8. The lighting unit as claimed in claim 7, wherein the at least one first opening is longitudinally oriented between the top sidewall and the bottom sidewall.
9. The lighting unit as claimed in claim 1,
wherein the rear wall comprises a plurality of first openings, the top sidewall comprises a plurality of second openings, and the bottom sidewall comprises a plurality of third openings,
wherein, in areas where the rear wall and the top sidewall adjoin, corresponding first openings and second openings merge to form respective single top openings, and
wherein, in areas where the rear wall and the bottom sidewall adjoin, corresponding first openings and third openings merge to form respective single bottom openings.
10. The lighting unit as claimed in claim 1, wherein the hollow box has a two-part construction, wherein a first part comprises the heat-conducting wall and a second part comprises the rear wall, the top sidewall and the bottom sidewall; and
wherein the rear wall, the top sidewall and the bottom sidewall are made of a material that conducts heat poorly relative to a material that forms the heat-conducting wall.
11. The lighting unit as claimed in claim 1, wherein the at least one lamp is a fluorescent lamp connected to a driver circuit with a low output impedance.
12. The lighting unit as claimed in claim 11,
wherein the fluorescent lamp is connected directly to an inductive output transformer of the driver circuit; and
wherein the output transformer is configured to limit transmitted power of the output transformer.
13. The lighting unit as claimed in claim 1, wherein the top sidewall and the bottom sidewall comprise no further openings disposed between the second opening and the heat-conducting wall, and the third opening and the heat-conducting wall, respectively.
14. The lighting unit as claimed in claim 1, wherein the lighting unit is configured to provide backlighting for a flat panel display device that is operated in substantially a vertical working position.
15. The lighting unit as claimed in claim 1, wherein the at least one lamp comprises a plurality of the lamps.
16. The lighting unit as claimed in claim 1, wherein the at least one first opening comprises a plurality of the openings.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of depositing a strained metal silicon nitride film on a substrate in a process chamber, comprising:
exposing the substrate to a gas comprising a metal precursor;
exposing the substrate to a gas comprising a silicon precursor;
exposing the substrate to a gas comprising a first nitrogen precursor configured to react with the metal precursor or the silicon precursor with a first reactivity characteristic; and
exposing the substrate to a gas comprising a second nitrogen precursor configured to react with the metal precursor or the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the metal silicon nitride film formed on the substrate changes to provide the strained metal silicon nitride film.
2. The method of claim 1, comprising:
a) exposing the substrate to a gas pulse comprising the metal precursor;
b) exposing the substrate to a gas pulse comprising the first nitrogen precursor or a gas pulse comprising the first nitrogen precursor and a second nitrogen precursor in a first ratio;
c) exposing the substrate to a gas pulse comprising the silicon precursor;
d) exposing the substrate to a gas pulse comprising the second precursor when step b) exposed the substrate to the first nitrogen precursor or a gas pulse comprising the first and second nitrogen precursors in a second ratio different from the first ratio when step b) exposed the substrate to the first and second nitrogen precursors in the first ratio; and
e) repeating steps a)-d) a predetermined number of times.
3. The method of claim 2, further comprising sequentially performing steps a) and b) a first number of times prior to performing steps c) and d).
4. The method of claim 2, further comprising sequentially performing steps c) and d) a second number of times prior to repeating steps a) and b) in step e).
5. The method of claim 2, further comprising sequentially performing steps a) and b) a first number of times prior to performing steps c) and d), and sequentially performing steps c) and d) a second number of times prior to repeating steps a) and b) in step e).
6. The method of claim 5, wherein the first number of times or the second number of times, or both the first and second number of times, are varied during the deposition of the strained metal silicon nitride film.
7. The method of claim 2, wherein step b) comprises exposing the substrate to a gas pulse comprising the first and second nitrogen precursors in a first ratio, and step d) comprises exposing the substrate to the first and second nitrogen precursors in a second ratio different from the first ratio.
8. The method of claim 7, wherein the first ratio or the second ratio, or both the first and second ratio, are between a ratio corresponding to substantially pure first nitrogen precursor and a ratio corresponding to substantially pure second nitrogen precursor during deposition of the strained metal silicon nitride film.
9. The method of claim 1, wherein the metal precursor comprises a meal element selected from alkaline earth elements rare earth elements, Group III, Group IIIB, Group IVB, Group VB, and Group VIB of the Periodic Table, or a combination of two or more thereof.
10. The method of claim 1, wherein the first and second nitrogen precursors are selected from NH3, N2H4, and C1-C10 alkyl hydrazine compounds.
11. The method of claim 1, wherein the silicon precursor comprises silane (SiH4), disilane (Si2H6), monochlorosilane (SiClH3), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), hexachlorodisilane (Si2Cl6), diethylsilane, alkylaminosilane compounds or a combination of two or more thereof.
12. The method of claim 2, further comprising purging or evacuating, or both purging and evacuating the process chamber after each of steps a)-d).
13. The method of claim 2, wherein steps a) and b) have at least partial temporal overlap.
14. The method of claim 2, wherein steps c) and d) have at least partial temporal overlap.
15. The method of claim 2, wherein steps a) and b) have at least partial temporal overlap and steps c) and d) have at least partial temporal overlap.
16. The method of claim 1, comprising:
exposing the substrate to a gas pulse comprising the metal precursor and the first and second nitrogen precursors, wherein the first and second nitrogen precursors are present in a first ratio; and
exposing the substrate to a gas pulse comprising the silicon precursor and the first and second nitrogen precursors, wherein the first and second nitrogen precursors are present in a second ratio, and wherein the first ratio or the second ratio, or both the first and second ratio are varied during deposition of the strained metal silicon nitride film.
17. The method of claim, 16, wherein the first gas pulse further comprises a silicon precursor and the second gas pulse further comprises a metal precursor.
18. The method of claim 16, wherein the first ratio or the second ratio, or both the first and second ratios are varied between a ratio corresponding to substantially pure first nitrogen precursor and a ratio corresponding to substantially pure second nitrogen precursor.
19. The method of claim 16, wherein the first ratio or the second ratio or both the first and second ratios are varied monotonically.
20. The method of claim 1, comprising:
exposing the substrate to a gas pulse comprising the metal precursor, the silicon precursor, and the first and second nitrogen precursors, wherein a ratio of the first and second nitrogen precursors is varied during deposition of the strained metal silicon nitride film.
21. The method of claim 20, wherein the ratio is varied between a first ratio corresponding to substantially pure first nitrogen precursor and a second ratio corresponding to substantially pure second nitrogen precursor.
22. The method of claim 20, wherein the ratio is varied monotonically.
23. The method of claim 1, wherein the exposing steps have at least partial temporal overlap.
24. A semiconductor device comprising a strained metal silicon nitride film deposited according to the method of claim 1.
25. The method of claim 1, further comprising activating a plasma in the process chamber during one or more of the exposing steps.
26. The method of claim 11, wherein the alkylaminosilane comprises di-isopropylaminosilane, bis(tert-butylamino)silane, tetrakis(dimethylamino)silane, tetrakis(ethylmethylamino)silane, tetrakis(diethylamino)silane, tris(dimethylamino)silane, tris(ethylmethylamino)silane, tris(diethylamino)silane, or tris(dimethylhydrazino)silane, or a combination of two or more thereof.