1. A nonvolatile semiconductor memory device comprising:
a unit block cell array including a plurality of vertically layered cell arrays including a plurality of unit cells arranged in row and column directions;
a column address decoder configured to decode a column address to activate a bit line of a cell array selected from the plurality of cell arrays;
a sense amplifier unit configured to sense and amplify data of the bit line of the plurality of cell arrays and shared by the unit block cell array; and
a vertical address decoding unit configured to decode a vertical address to select one of the plurality of cell arrays and to connect an output signal from the sense amplifier to the bit line of the selected cell array;
wherein the plurality of cell arrays comprise:
a plurality of bottom word lines;
an insulating layer formed over the plurality of bottom word lines;
a floating channel layer formed over the insulating layer and including a plurality of drain and source regions serially connected to a plurality of channel regions alternately;
a ferroelectric layer formed over the floating channel layer; and
a plurality of word lines formed over the ferroelectric layer so as to be connected to the plurality of bottom word lines,
wherein a different resistance is induced to a channel region of the floating channel layer depending on a polarity state of the ferroelectric layer so that data is read or written.
2. The nonvolatile semiconductor memory device according to claim 1, wherein a plurality of unit bank cell arrays comprising a plurality of unit block cell arrays arranged in directions X, Y, and Z based on a deposition direction of the plurality of cell arrays are configured to perform readwrite operations individually.
3. The nonvolatile semiconductor memory device according to claim 1, further comprising:
a row address decoder configured to decode a row address to activate a word line of the selected cell array; and
a row decoding unit configured to selectively connect a word line of the selected cell array to a row line which is output from the row address decoder in response to an output signal from the vertical address decoding unit.
4. The nonvolatile semiconductor memory device according to claim 3, wherein the row address decoder further comprises a row address register configured to output the row address to the row address decoder.
5. The nonvolatile semiconductor memory device according to claim 3, wherein the row address, the column address, and the vertical address are inputted from separate pads.
6. The nonvolatile semiconductor memory device according to claim 1, further comprising:
a column address register configured to output the column address to the column address decoder; and
a vertical address register configured to output the vertical address to the vertical address decoder.
7. The nonvolatile semiconductor memory device according to claim 1, further comprising:
a bank address register configured to output a bank address; and
a bank address decoder configured to decode an output signal from the bank address register so as to select one of the plurality of unit bank cell arrays.
8. The nonvolatile semiconductor memory device according to claim 7, wherein the bank address is inputted from a pad which is separated from pads where the column address and the vertical address are inputted.
9. The nonvolatile semiconductor memory device according to claim 1, wherein the vertical address decoding unit comprises:
a vertical address decoder configured to decode the vertical address to select one of the plurality of cell arrays; and
a sense amplifier decoding unit configured to selectively connect a bit line of the selected cell array to a column line output from the sense amplifier in response to an output signal from the vertical address decoder.
10. The nonvolatile semiconductor memory device according to claim 9, wherein the sense amplifier decoding unit includes a plurality of switches connected between the column line and the bit line and configured to perform a switching operation in response to an output signal from the vertical address decoder.
11. The nonvolatile semiconductor memory device according to claim 1, wherein the sense amplifier unit includes a plurality of sense amplifiers configured to be activated depending on a decoding result of the column address decoder.
12. The nonvolatile semiconductor memory device according to claim 11, wherein one sense amplifier selected from the plurality of sense amplifiers is connected to one bit line in the selected cell array.
13. The nonvolatile semiconductor memory device according to claim 1, wherein the unit cell includes a FeRAM cell, a PRAM cell, a MRAM cell, or a ReRAM cell.
14. The nonvolatile semiconductor memory device according to claim 1, wherein the plurality of channel regions, the plurality of drain regions, and the plurality of source regions comprise P-type regions.
15. The nonvolatile semiconductor memory device according to claim 1, wherein the plurality of channel regions, the plurality of drain regions, and the plurality of source regions comprise N-type regions.
16. The nonvolatile semiconductor memory device according to claim 1, wherein the floating channel layer comprises a carbon nano-tube.
17. The nonvolatile semiconductor memory device according to claim 1, wherein the floating channel layer comprises silicon.
18. The nonvolatile semiconductor memory device according to claim 1, wherein the floating channel layer comprises germanium.
19. The nonvolatile semiconductor memory device according to claim 1, wherein the floating channel layer comprises an organic semiconductor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A transport device for paper, comprising
a conveyor belt that is guided over two rollers and is composed of metal through which air can flow, wherein the upper section of this belt forms the transport section and its lower section forms the return, and with
a vacuum or low pressure generator that is arranged below the upper section,
characterized in that the conveyor belt is composed of a metal mesh.
2. The transport device according to claim 1, characterized in that the conveyor belt is produced from a metal-mesh strip, the end faces of which are plasma-welded or laser welded together.
3. The transport device according to claim 1, characterized in that the vacuum generator comprises at least one axial fan, arranged between the transport section and the return section.
4. The transport device according to claim 3, characterized in that the axial fan acts directly onto the transport section and the return section.
5. The transport device according to claim 3, characterized in that the vacuum generator comprises several axial fans.
6. The transport device according to claim 1, characterized in that the mesh of the metal belt is a mesh in twill weave, a mesh in plain weave or a mesh in smooth weave.
7. The transport device according to claim 1, characterized in that at least one cleaning device is provided which acts upon the return section.
8. The transport device according to claim 7, characterized in that the cleaning device moistens the conveyor belt.
9. The transport device according to claim 8, characterized in that the cleaning device is embodied as a cleaning station, provided with a cleaning roller that can be driven and a container that is open on the top and can be filled with liquid, wherein the cleaning roller is positioned such that an upper section of its surface comes in contact with the returning section of the conveyor belt and that a lower section of the cleaning roller is located inside the container.
10. The transport device according to claim 9, characterized in that the axis of the cleaning roller extends parallel to the axes of the rollers.
11. The transport device according to claim 10, characterized in that the cleaning roller is driven in the same rotational direction as the rollers.
12. The transport device according to claim 9, characterized in that a strip roller is furthermore provided which extends parallel to the cleaning roller but is advantageously driven in counter direction to the cleaning roller and comes in contact with a section of the surface of the cleaning roller.
13. The transport device according to claim 9, characterized in that at least the outer jacket of the cleaning roller takes the form of a sponge.
14. The transport device according to claim 9, characterized in that at least the outer jacket of the cleaning roller is embodied in the form of a brush, wherein the bristles of said brush extend essentially radial to the axis of the cleaning roller.
15. The transport device according to claim 1, characterized in that the conveyor belt is sand blasted andor is coated with a Nano coating.
16. A paper processing arrangement with a transport device according to claim 1 and a laser, arranged above the transport section, for cutting paper.
17. The transport device according to claim 2, characterized in that the vacuum generator comprises at least one axial fan, arranged between the transport section and the return section.
18. The transport device according to claim 17, characterized in that the vacuum generator comprises several axial fans.
19. The transport device according to claim 4, characterized in that the vacuum generator comprises several axial fans.
20. The transport device according to claim 2, characterized in that the mesh of the metal belt is a mesh in twill weave, a mesh in plain weave or a mesh in smooth weave.