1. An integrated circuit (\u201cIC\u201d) package for detecting light from at least one light source, comprising:
a housing, said housing having a predetermined spectral transmittance;
a sensor, positioned within said housing;
an opaque mask, applied to said housing, said opaque mask having a hole aligned with said sensor such that said light’s centroid is detected by said sensor.
2. The IC package of claim 1, wherein said hole has a dimension of about 2 mm by 2 mm.
3. The IC package of claim 1, wherein said sensor comprises a position-sensitive detector (\u201cPSD\u201d).
4. The IC package of claim 1, wherein said sensor comprises a segmented photo diode (\u201cSPD\u201d).
5. The IC package of claim 3, wherein said opaque mask is printed onto said housing.
6. The IC package of claim 4, wherein said opaque mask is printed onto said housing.
7. The IC package of claim 1, wherein said hole is formed by an unmasked area on said housing.
8. The IC package of claim 5, wherein said hole is formed by an unmasked area on said housing.
9. The IC package of claim 1, wherein said housing is made of a transparent material with a predetermined spectral transmittance.
10. The IC package of claim 2, wherein said housing is made of a transparent material with a predetermined spectral transmittance.
11. The IC package of claim 5, wherein said housing is made of a transparent material with a predetermined spectral transmittance.
12. The IC package of claim 3, further comprising:
a substrate within said housing, said substrate being disposed to position said sensor in said housing;
an analog filter and amplification module (\u201cAFA\u201d) mounted on said substrate, said AFA being disposed to filter and amplify signals from said sensor and generate an output signal;
a digital signal processor (\u201cDSP\u201d) mounted on said substrate, said DSP being adapted to generate a coordinate system by extracting frequency components from said output signal from said AFA.
13. The IC package of claim 4, further comprising:
a substrate within said housing, said substrate being disposed to position said sensor in said housing;
an analog filter and amplification module (\u201cAFA\u201d) mounted on said substrate, said AFA being disposed to filter and amplify signals from said sensor and generate an output signal;
a digital signal processor (\u201cDSP\u201d) mounted on said substrate, said DSP being adapted to generate a coordinate system by extracting frequency components from said output signal from said AFA.
14. The IC package of claim 12, said AFA further comprises:
a transimpedance amplifier (\u201cTIA\u201d), being disposed to amplify signals from said sensor and remove DC components from said signals to generate its output;
a first passive high-pass filter (\u201c1st PHP\u201d), said 1st PHP being disposed to remove DC bias from the output of said TIA and generate its output;
a passive notch filter (\u201cPNF\u201d), disposed to remove noise signals between predetermined ranges of frequencies from the output of said 1st PHP and generate its output;
a second passive high-pass filter (\u201c2nd PHP\u201d), being disposed to remove DC bias from the output of said PNF and generate its output;
a gain amplifier, coupled to said 2nd PHP, being disposed to amplify the output from said 2 PHP and generate its output;
a passive low-pass filter (\u201cPLP\u201d), being disposed to remove signals above a predetermined frequency from the output of said gain amplifier and generate its output.
15. The IC package of claim 14, wherein said DSP extracts said frequency components by using one of the following filters: Goertzel, FFT, DFT, FIR and IIR.
16. A multi-chip module (\u201cMCM\u201d) for detecting at least one light source, comprising:
an integrated package that is essentially transparent relative to the wavelength of said light source;
a substrate mounted within said n integrated package;
a sensor, mounted on said substrate within said n integrated package;
an opaque mask, coupled to said integrated package, said opaque mask having an aperture formed thereon, said aperture being sized and aligned with said sensor such that an optical path is formed from said light source to said sensor through said opaque mask.
17. The MCM of claim 16, wherein said aperture has a dimension of about 2 mm by 2 mm.
18. The MCM of claim 16, wherein said sensor is a position-sensitive detector (\u201cPSD\u201d).
19. The MCM of claim 16, wherein said sensor is a segmented photo-diode (\u201cSPD\u201d).
20. The MCM of claim 16, wherein said integrated package is formed by a resin that is essentially transparent to the wavelength of interest, and has a predetermined spectral transmittance profile.
21. The MCM of claim 18, wherein said integrated package is formed by a resin that is essentially transparent to the wavelength of interest, and has a predetermined spectral transmittance profile.
22. The MCM of claim 19, wherein said integrated package is formed by a resin that is essentially transparent to the wavelength of interest, and has a predetermined spectral transmittance profile.
23. The MCM of claim 16, wherein said aperture is formed by an area on said opaque mask that is transparent to said light source.
24. The MCM of claim 21, wherein said aperture is formed by an area on said opaque mask that is transparent to said light source.
25. The MCM of claim 16, wherein said integrated package is made of a transparent material with a predetermined spectral transmittance.
26. The MCM of claim 18, wherein said integrated package is made of a transparent material with a predetermined spectral transmittance.
27. The MCM of claim 21, wherein said integrated package is made of a transparent material with a predetermined spectral transmittance.
28. The MCM of claim 16, further comprising:
an analog filter and amplification module (\u201cAFA\u201d) coupled to said integrated package, said AFA being disposed to filter and amplify signals from said sensor and generate a second signal;
a digital signal processor (\u201cDSP\u201d) coupled to said integrated package and said AFA, said DSP being adapted to generate a coordinate system by extracting frequency components from said second signal.
29. The MCM of claim 28, said AFA further comprises:
a transimpedance amplifier (\u201cTIA\u201d), being disposed to amplify signals from said sensor and remove DC components from the sensor signals to generate its output;
a first passive high-pass filter (\u201c1st PHP\u201d), said 1st PHP being disposed to remove DC bias from the output of said TIA and generate its output;
a passive notch filter (\u201cPNF\u201d), disposed to remove noise signals between predetermined ranges of frequencies from the output of said 1st PHP and generate its output;
a second passive high-pass filter (\u201c2nd PHP\u201d), being disposed to remove DC bias from the output of said PNF and generate its output;
a gain amplifier, coupled to said 2nd PHP, being disposed to amplify the output from said 2nd PHP and generate its output;
a passive low-pass filter (\u201cPLP\u201d), being disposed to remove signals above a predetermined frequency from the output of said gain amplifier and generate its output.
30. The MCM of claim 28, wherein said DSP extracts said frequency components by using one of following filters: Goertzel algorithm, FFT, DFT, FIR and IIR.
31. A method of integrating optics into an integrated circuit package for detecting at least one light source, comprising:
providing a substrate;
mounting an image sensor on said substrate;
enclosing said image sensor within a transparent housing, said transparent housing having a predetermined spectral transmittance;
applying an opaque mask to said transparent housing, said opaque mask having a transparent aperture, said aperture being aligned with said sensor such that an optical path is formed from said light source through said aperture to said image sensor.
32. The method of claim 31, wherein said image sensor is a position-sensitive detector (\u201cPSD\u201d).
33. The method of claim 31, wherein said image sensor is a segmented photo diode (\u201cSPD\u201d).
34. The method of claim 31, further comprising:
mounting an analog filter and amplifier module (\u201cAFA\u201d) on said substrate;
mounting a digital signal processor module (\u201cDSP\u201d) on said substrate;
interconnecting said image sensor, said AFA and said DSP;
encapsulating said image sensor, said AFA and said DSP into a multi-chip module package using said transparent housing.
35. The method of claim 32, further comprising:
mounting an analog filter and amplifier module (\u201cAFA\u201d) on said substrate;
mounting a digital signal processor module (\u201cDSP\u201d) on said substrate;
interconnecting said image sensor, said AFA and said DSP;
encapsulating said image sensor, said AFA and said DSP into a multi-chip module package using said transparent housing.
36. The method of claim 33, further comprising:
mounting an analog filter and amplifier module (\u201cAFA\u201d) on said substrate;
mounting a digital signal processor module (\u201cDSP\u201d) on said substrate;
interconnecting said image sensor, said AFA and said DSP;
encapsulating said image sensor, said AFA and said DSP into a multi-chip module package using said transparent housing.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for preparing hydrocyanic acid by catalytic dehydration of gaseous formamide, comprising
(i) catalytic dehydration of gaseous formamide in at least one main reactor to form an intermediate gaseous reaction product, where the conversion of formamide at an outlet from the at least one main reactor is at least 95%, based on the formamide used, and
(ii) introduction of the intermediate gaseous reaction product into an after-reactor at an entry temperature of from 350 to 700\xb0 C., where the after-reactor comprises internals or beds composed of steel and is operated adiabatically.
2. The process according to claim 1, wherein the catalytic dehydration in (i) is carried out in a tube reactor comprising at least one reaction channel.
3. The process according to claim 1, wherein the catalytic dehydration in (i) is carried out in the presence of shaped bodies selected from among highly sintered shaped bodies comprising aluminum oxide and optionally silicon oxide and chromium-nickel stainless steel shaped bodies or in the presence of packings comprising steel or iron oxide on porous support materials or in the presence of ordered packings comprising steel as catalysts andor the inner reactor surface of the main reactor is made of steel and serves as catalyst.
4. The process according to claim 1, wherein the catalytic dehydration in (i) is carried out at a temperature of from 350 to 700\xb0 C.
5. The process according to claim 1, wherein the catalytic dehydration in (i) is carried out at a pressure of from 70 mbar to 5 bar, absolute pressure.
6. The process according to claim 1, wherein the catalytic dehydration in (i) is carried out in the presence of oxygen.
7. The process according to claim 1, wherein the catalytic dehydration in (i) is carried out at a formamide loading per unit area of from 0.1 to 100 kgm2, based on an inner surface area of the tube or of the multitube reactor.
8. The process according to claim 1, wherein the internals in the after-reactor in (ii) are ordered packings.
9. The process according to claim 8, wherein the ordered packings are a static mixer, and the static mixer comprises of metal sheets.
10. The process according to claim 1, wherein the steel in the internals or beds of the after-reactor in (ii) is selected from among steel grades corresponding to the standards 1.4541, 1.4571, 1.4573, 1.4580, 1.4401, 1.4404, 1.4435, 1.4816, 1.3401, 1.4876 and 1.4824.
11. The process according to claim 1, wherein the after-reactor in (ii) is operated at a pressure of from 70 mbar to 5 bar, absolute pressure.
12. The process according to claim 1, wherein the gaseous formamide used in (i) is obtained by vaporization of liquid formamide at a temperature of from 110 to 270\xb0 C.
13. The process according to claim 12, wherein the vaporization of the formamide is carried out at a pressure of from 20 mbar to 3 bar.
14. The process according to claim 12, wherein a millistructured or microstructured apparatus is used as vaporizer.
15. (canceled)