1. An insertion system comprising:
a folding device to perform either single-sheet folding to fold a single sheet at a time or batch folding to fold multiple sheets together at a time;
an insertion device to insert into an envelope the sheet folded by the folding device; and
a batch setting unit to designate either the single-sheet folding or the batch folding from a folding and insertion menu for multiple sheets at a time when the multiple sheets are processed by the folding device and the insertion device.
2. The insertion system according to claim 1, further comprising an individual setting unit to designate either the single-sheet folding or the batch folding from the folding and insertion menu for each of the multiple sheets processed by the folding device and the insertion device.
3. The insertion system according to claim 2, further comprising a selection unit via which a user selects either the batch setting unit or the individual setting unit.
4. The insertion system according to claim 2, wherein the folding and insertion menu further comprises folding type options and folding method options.
5. The insertion system according to claim 4, further comprising a folding type selection unit to select one of the folding type options; and
a folding method selection unit to select either the single-sheet folding or the batch folding.
6. The insertion system according to claim 2, wherein either the batch setting unit or the individual setting unit is selected for each set of sheets inserted into a single envelope.
7. The insertion system according to claim 2, further comprising an image forming apparatus to form an image on at least one of the envelope and the sheet inserted into the envelope.
8. The insertion system according to claim 7, further comprising a controller to control image formation, folding operation, and insertion operation; and
an output order changer to change order of image formation on the multiple sheets,
wherein, when the batch setting unit designates the batch folding to fold multiple sheets at a time, the controller compares the order of image formation on the multiple sheets with order of batch folding, and
when the order of image formation is inconsistent with the order of batch folding, the output order changer changes the order of image formation to enable the batch folding.
9. The insertion system according to claim 8, further comprising a display to display the selection unit and a message to the user,
wherein the display indicates that the output order changer changes the order of image formation when the order of image formation is inconsistent with the order of batch folding.
10. The insertion system according to claim 9, further comprising a change confirmation unit to confirm or cancel changes in the order of image formation made by the output order changer when the display indicates that the output order changer changes the order of image formation.
11. An insertion method comprising:
a step of selecting whether a processing option of multiple sheets processed by a folding device and an insertion device is designated at a time or for each of the multiple sheets;
a step of designating either single-sheet folding to fold a single sheet at a time or batch folding to fold multiple sheets together at a time according to selection made at the step of selecting as a folding method;
a step of folding the multiple sheets according to a designated folding method; and
a step of inserting into either a single envelope or respective envelopes the folded sheets.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a semiconductor structure, comprising:
forming a stress receiving layer over a stress inducing layer with an interface therebetween; and
providing a carbon doping of material at the interface between the stress receiving layer and the stress inducing layer to reduce misfit dislocations at the interface.
2. The method as claimed in claim 1, wherein the stress inducing layer comprises at least one of a relaxed and unrelaxed SiGe layer and the stress receiving layer is an upper Si layer.
3. The method as claimed in claim 1, wherein the carbon doping is provided:
at an interface between the stress receiving layer and the stress inducing layer;
at the interface between the stress receiving layer and the stress inducing layer and forms a carbon doped stress inducing layer; or
to form a carbon doped stress inducing layer.
4. The method as claimed in claim 3, wherein a percentage of the carbon doping is between about 0.01% and about 1% (atomic percent).
5. The method as claimed in claim 3, wherein the doping comprises a thickness of approximately 50 \u212b to 500 \u212b at the interface.
6. The method as claimed in claim 3, wherein the doping is imparted during the forming of the stress inducing layer.
7. The method as claimed in claim 3, wherein the doping is provided during the forming of the stress receiving layer.
8. The method as claimed in claim 1, wherein the doping is provided during the forming of both the stress inducing layer and the stress receiving layer.
9. The method as claimed in claim 1, wherein a tensile stress formed by the stress inducing layer is stabilized by a doping at the interface of the stress inducing and the stress receiving layer.
10. The method as claimed in claim 9, wherein the stress inducing layer is SiGe in a relaxed or initially unrelaxed state.
11. The method as claimed in claim 1, further comprising:
forming a first gate over the stress receiving layer;
protecting portions of the first gate, the stress receiving layer, the stress inducing layer and the material; and
forming openings in unprotected portions of the stress receiving layer, the stress inducing layer and the material and filling the openings with an epitaxial material.
12. The method as claimed in claim 11, wherein the first gate forms an NFET device.
13. The method as claimed in claim 1, wherein the stress inducing layer provides a tensile stress to the stress receiving layer.
14. A semiconductor structure, comprising at least one gate stack disposed on a stress containing structure having a first material, a second material and a carbon doped material, the carbon doped material configured to reduce misfit dislocations in the structure, the carbon doped material being at least one of:
an interface of the first material and the second material;
present in the first material forming a carbon doped first material; or
present in the second material forming a carbon doped second material; and
wherein the first material is a stress inducing material and the second material is a stress receiving layer.
15. The structure of claim 14, wherein the carbon material at the interface has a thickness in a range of approximately 50 \u212b to 500 \u212b.
16. The structure of claim 14, wherein carbon material is doped into at least one of the stress inducing and stress receiving material at a percentage between 0.01% and 1.0% (atomic percent).
17. The device of claim 14, wherein the stress inducing material is relaxed or initially unrelaxed SiGe and the stress receiving material is Si.
18. A semiconductor device, comprising an NFET device disposed on a layered structure comprising a SiGe stress inducing layer, a Si stress receiving layer and a carbon doped material which reduces misfit dislocations in the layered structure.
19. The device as claimed in claim 18, wherein the carbon material ranges from about 0.01 atomic percent to about 1 atomic percent and the doped carbon is at a concentration of about more than 1020 carbon atoms per cubic centimeter.
20. The structure as claimed in claim 18, wherein carbon is:
at an interface between SiGe stress inducing layer and the Si stress receiving layer; or
at the interface between the SiGe stress inducing layer and the Si stress receiving layer and a carbon doped SiGe stress inducing layer; or
in the SiGe stress inducing layer.