1. A type of dual speed vertical hydraulic jack, including pedestal (32) featuring hydraulic control pressure regulating assembly (20) and oil drain valve assembly (21); jacket (35), hydraulic cylinder (34) and pump body (17) fixed on pedestal (32) respectively; oil storage cavity (2) formed between jacket (35) and hydraulic cylinder (34); piston rod (1) placed in cavity (3) of hydraulic cylinder (34) and with piston assembly (36) at bottom; top cap (33) connected to top of jacket (35) and hydraulic cylinder (34) and used to support piston rod (1); pump core (18) fitted in pump cavity (8) of pump body (17); button (26) at top of pump core (18); and first oil path (5) (used to connect pump cavity (8) to cylinder cavity (3)) and second oil path (6) (used to connect pump cavity (8) to oil storage cavity (2)) provided on pedestal (32); characterized by that on bottom of said pump core (18), a step (38) is provided and constitutes sealing with inner wall of pump cavity (8), third oil path (9) and fourth oil path (12) are provided on step (38) respectively, first steel ball valve (15) and second steel ball valve (11) that control connection and disconnection of said pump cavity (8) with third oil path (9) and fourth oil path (12) respectively are provided on these oil paths ((9) and (12)), and at lower part of pump core (18), a fifth oil path (14) is provided for connecting third oil path (9) with upper cavity of pump cavity (8).
2. A dual speed vertical hydraulic jack as described in claim 1, characterized by that the said third oil path (9) and fourth oil path (12) are provided on step (38) longitudinally and in parallel to each other.
3. A dual speed vertical hydraulic jack as described in claim 1, characterized by that the said third oil path (9) is provided on step (38) corresponding to center of pump core (18).
4. A dual speed vertical hydraulic jack as described in claim 1, characterized by that at lower part of said pump core (18), pump core concave cavity (13) corresponding to said third oil path (9) and connecting to fifth oil path (14) is provided, and this cavity (13) includes first spring (16), which is in contact with first steel ball valve (15).
5. A dual speed vertical hydraulic jack as described in claim 1, characterized by that inside said fourth oil path (12), second spring (10) is provided, and in contact with second steel ball valve (11).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A graphene base, comprising:
graphene; and
a substrate,
wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the graphene does not have a wrinkle.
2. The graphene base of claim 1, wherein a ratio of a peak D-band intensity to a peak G-band intensity of the graphene is equal to or less than about 0.5, in a Raman spectrum of the graphene.
3. The graphene base of claim 1, wherein a ratio of an area of a D-band peak to an area of a G-band peak of the graphene is equal to or less than about 0.5, in a Raman spectrum of the graphene.
4. The graphene base of claim 1, wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.
5. The graphene base of claim 1, wherein the graphene has a patterned shape.
6. The graphene base of claim 1, further comprising a graphitization catalyst layer on the graphene.
7. The graphene base of claim 1, wherein the substrate is a silicon substrate on which an oxide layer is disposed.
8. The graphene base of claim 1, wherein the substrate comprises silicon, a glass, gallium nitride, a plastic, polyethylene terephthalate, polyester sulfone, polyethylene napthalate, Ni, Cu, W, Fe, Co, silica, or a combination thereof.
9. The graphene base of claim 6, wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium.
10. The graphene base of claim 6, wherein a thickness of the graphitization catalyst layer is about 1 nanometer to about 1 micrometer.
11. The graphene base of claim 1, wherein a pattern layer is disposed on the at least one surface of the substrate before the graphene is formed on the substrate.
12. The graphene base of claim 11, wherein the graphene is formed according to a shape of the pattern layer on the substrate.
13. The graphene base of claim 1, wherein at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle disposed on the surface of the substrate.
14. A method of preparing a graphene base, the method comprising:
disposing a carbon-based material on at least one surface of a substrate;
disposing a graphitization catalyst layer on the carbon-based material; and
forming graphene by thermally treating the substrate, on which the carbon-based material and the graphitization catalyst layer are formed, under an inert atmosphere or a reducing atmosphere.
15. The method of claim 14, wherein the carbon-based material is at least one selected from the group consisting of a carbon-containing polymer, a gaseous carbon-based material, amorphous carbon, and an organometallic compound.
16. The method of claim 14, further comprising patterning the carbon-based material on the substrate.
17. The method of claim 14, further comprising patterning the graphitization catalyst layer on the substrate.
18. The method of claim 14, further comprising
forming a ceramic layer on the graphitization catalyst layer; and
patterning the ceramic layer.
19. The method of claim 18, wherein the ceramic layer is an oxide layer.
20. The method of claim 14, wherein the graphene has a patterned shape.
21. The method of claim 14, wherein the carbon-based material has a patterned shape.
22. The method of claim 14, wherein the graphitization catalyst layer has a patterned shape.
23. The method of claim 14, wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.
24. The method of claim 14, wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium.
25. The method of claim 14, wherein a thickness of the graphitization catalyst layer is about nanometer to about 1 micrometer.
26. The method of claim 14, further comprising removing the graphitization catalyst layer by acid-treatment after the forming of the graphene.
27. The method of claim 26, further comprising forming a pattern on the graphitization catalyst layer by selectively removing a portion of the graphitization catalyst layer.
28. The method of claim 14, wherein a pattern layer is disposed on one surface of the substrate before the disposing of the carbon-based material on the substrate.
29. The method of claim 28, wherein the graphene has a shape which is the same as a shape of the pattern layer.
30. An electrical device, comprising:
a graphene base, the graphene base comprising
graphene; and
a substrate,
wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the graphene does not have a wrinkle.