1. An active device array substrate, comprising:
a substrate having a display area and a sensing area;
a first patterned conductor layer disposed on the display area of the substrate;
a gate insulator disposed on the substrate to cover the first patterned conductor layer;
a patterned semiconductor layer disposed on the gate insulator;
a second patterned conductor layer comprising a source electrode, a drain electrode and a lower electrode, wherein the source electrode and the drain electrode are disposed in the display area and cover a part of the patterned semiconductor layer, and the lower electrode is disposed on the gate insulator in the sensing area of the substrate;
a patterned photosensitive dielectric layer comprising an interface protection layer and a photo-sensing layer, wherein the interface protection layer is disposed on the source electrode and the drain electrode, and the photo-sensing layer is disposed on the lower electrode;
a passivation layer disposed on the substrate to cover the patterned photosensitive dielectric layer and the gate insulator, wherein the passivation layer and patterned photosensitive dielectric layer have a first contact window to expose one of the source electrode and the drain electrode, and the passivation layer has a second contact window to expose a portion of the photo-sensing layer; and
a third patterned conductor layer comprising a pixel electrode and an upper electrode, wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode through the first contact window, and the upper electrode covers the photo-sensing layer through the second contact window.
2. The active device array substrate of claim 1, wherein the first patterned conductor layer comprises a scan line and a gate electrode connected to the scan line.
3. The active device array substrate of claim 2, wherein the first patterned conductor layer further comprises a first bonding pad connected to an end of the scan line.
4. The active device array substrate of claim 3, wherein the gate insulator and the passivation layer further comprises a third contact window to expose the first bonding pad and a part of the third patterned conductor layer above the first bonding pad is electrically connected to the first bonding pad through the third contact window.
5. The active device array substrate of claim 1, wherein the second patterned conductor layer further comprises a data line connected to the source electrode.
6. The active device array substrate of claim 5, wherein the second patterned conductor layer further comprises a second bonding pad connected to an end of the data line.
7. The active device array substrate of claim 6, wherein the passivation layer further comprises a fourth contact window to expose the second bonding pad, and a part of the third patterned conductor layer above the second bonding pad is electrically connected to the second bonding pad through the fourth contact window.
8. The active device array substrate of claim 1, wherein the passivation layer comprises an inorganic protection layer and an organic protection layer disposed on the inorganic protection layer.
9. The active device array substrate of claim 1, further comprising a pad layer between the lower electrode and the gate insulator.
10. The active device array substrate of claim 1, further comprising a patterned heavily doped semiconductor layer is disposed between the patterned semiconductor layer and the second patterned conductor layer.
11. The active device array substrate of claim 1, wherein the patterned photosensitive dielectric layer comprises a silicon rich dielectric layer.
12. The active device array substrate of claim 1, wherein the silicon rich dielectric layer comprises a silicon rich oxide layer, a silicon rich nitride layer, a silicon rich oxynitride layer, a silicon rich carbide layer, a silicon rich carboxide layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An apparatus having a morphable free surface, comprising:
a substrate having a surface;
a morphable skin having first and second surfaces, said first surface of said morphable skin being attached to at least a portion of said surface of said substrate, said second surface of said morphable skin comprising at least one asperity, said at least one asperity configured to exhibit a morphable configuration of said second surface relative to said surface of said substrate, said at least one asperity having a height of the order of 10 percent or less than a boundary layer thickness of a fluid passing over said apparatus; and
an actuator in operative communication with said morphable skin, said actuator configured to apply a control signal to said morphable skin;
whereby, in response to a control signal applied to said morphable skin by said actuator, said second surface of said skin assumes a modified surface configuration relative to said surface of said substrate so as to provide a morphable free surface.
2. The apparatus having a morphable free surface of claim 1, wherein said morphable skin comprises an ionic polymer metal composite.
3. The apparatus having a morphable free surface of claim 1, further comprising electrodes in electrical communication with said morphable skin.
4. The apparatus having a morphable free surface of claim 3, wherein said control signal is an electrical signal applied to said electrodes.
5. The apparatus having a morphable free surface of claim 1, wherein said morphable skin comprises a shape memory material.
6. The apparatus having a morphable free surface of claim 1, wherein said control signal is a thermal signal.
7. The apparatus having a morphable free surface of claim 1, wherein said actuator is configured to be controlled by a general purpose programmable computer.
8. The apparatus having a morphable free surface of claim 1, wherein said at least one asperity comprises a surface asperity of the order of 1 millimeter.
9. The apparatus having a morphable free surface of claim 1, wherein said at least one asperity comprises a surface asperity having a height represented by the relation m * \u03bdu\u03c4, in which \u03bd is a fluid kinematic viscosity, u\u03c4 is a friction velocity equal to a square root of a ratio of wall shear stress \u03c4 to a fluid density \u03c1, and 0<m \u2266100.
10. The apparatus having a morphable free surface of claim 1, wherein said modified surface configuration relative to said surface of said substrate has a response frequency of the order of 1 kiloHertz.
11. The apparatus having a morphable free surface of claim 1, wherein said modified surface configuration relative to said surface of said substrate has a response frequency of less than the order of the viscous frequency, given by u\u03c42\u03bd, in which \u03bd is a fluid kinematic viscosity, and u\u03c4 is a friction velocity equal to a square root of a ratio of wall shear stress \u03c4 to a fluid density \u03c1.
12. A method of modifying a shape of a morphable free surface, comprising the steps of:
providing a substrate having a surface;
providing a morphable skin having first and second surfaces, said first surface of said morphable skin attached to at least a portion of said surface of said substrate, said second surface of said morphable skin comprising at least one asperity, said at least one asperity configured to exhibit a morphable configuration of said second surface relative to said surface of said substrate, said at least one asperity having a height of the order of 10 percent or less than a boundary layer thickness of a fluid passing over said apparatus;
providing an actuator in operative communication with said morphable skin, said actuator configured to apply a control signal to said morphable skin; and
applying a control signal to said morphable skin from said actuator;
whereby, in response to said control signal, said second surface of said morphable skin is caused to assume a modified surface configuration relative to said surface of said substrate thereby morphing said second surface of said morphable skin.
13. The method of modifying a shape of a morphable free surface of claim 12, wherein said morphable skin comprises an ionic polymer metal composite.
14. The method of modifying a shape of a morphable free surface of claim 12, further comprising the step of providing electrodes in electrical communication with said morphable skin.
15. The method of modifying a shape of a morphable free surface of claim 14, wherein said control signal is an electrical signal applied to said electrodes.
16. The method of modifying a shape of a morphable free surface of claim 12, wherein said morphable skin comprises a shape memory material.
17. The method of modifying a shape of a morphable free surface of claim 12, wherein said control signal is a thermal signal.
18. The method of modifying a shape of a morphable free surface of claim 12, wherein said actuator is configured to be controlled by a general purpose programmable computer.
19. The method of modifying a shape of a morphable free surface of claim 12, wherein said at least one asperity comprises a surface asperity of the order of 1 millimeter.
20. The method of modifying a shape of a morphable free surface of claim 12, wherein said at least one asperity comprises a surface asperity having a height represented by the relation m * \u03bdu\u03c4, in which \u03bd is a fluid kinematic viscosity, u\u03c4, is a friction velocity equal to a square root of a ratio of wall shear stress \u03c4 to a fluid density \u03c1, and 0<m \u2266100.
21. The method of modifying a shape of a morphable free surface of claim 12, wherein said modified surface configuration relative to said surface of said substrate is attained in a time of the order of 1 millisecond.
22. The method of modifying a shape of a morphable free surface of claim 12, wherein said modified surface configuration relative to said surface of said substrate has a response frequency of less than the order of the viscous frequency, given by u\u03c42\u03c4, in which \u03bdis a fluid kinematic viscosity, and u\u03c4 is a friction velocity equal to a square root of a ratio of wall shear stress \u03c4 to a fluid density \u03c1.