1. An emergency medical transport vehicle, comprising:
a motorcycle having a step-through structural frame;
a platform horizontally disposed along a wheel-base, wherein said platform has a front flat surface, and two rear surfaces extending from said front flat surface on either side of a rear wheel, said rear surfaces each having sides extending vertically therefrom along the wheel-base; and
a movable seat for a driver.
2. The vehicle of claim 1, further comprising belts attached to the platform.
3. The vehicle of claim 1, wherein said seat for the driver is mounted to a seat-frame attached to rollers supported by rails on sides of the vehicle, and wherein the seat slides on said rails into a compartment at the front of the vehicle.
4. The vehicle of claim 1, wherein said seat is mounted to one end of a cantilever beam that is attached at the other end to a front section of the vehicle by means of a hinge, and wherein the seat can be flipped forward and upward by up to 90 degrees.
5. The vehicle of claim 1, wherein said seat is mounted to one end of a cantilever beam that is attached at the other end to a rear section of the vehicle by means of a hinge, and wherein the seat can be flipped backward by up to 180 degrees.
6. The vehicle of claim 1, wherein said seat is mounted to a telescoping cantilever beam that retracts into a molded recess within a rear section of the vehicle.
7. The vehicle of claim 1, wherein said seat is mounted to a seat-frame that is detachable from the vehicle.
8. The vehicle of claim 7, wherein the seat-frame is attached to the vehicle by a quick release mechanism.
9. The vehicle of claim 7, wherein said seat-frame is made of steel.
10. The vehicle of claim 7, wherein side-panels are attached to the sides of the seat-frame.
11. The vehicle of claim 10, wherein the side-panels are manufactured from plastic.
12. The vehicle of claim 7, wherein a belt is attached to the seat-frame.
13. The vehicle of claim 7, wherein a cover is removably attached to said seat-frame.
14. The vehicle of claim 12, wherein said cover for said seat-frame is manufactured from plastic, fiber glass, canvas or a synthetic fabric.
15. The vehicle of claim 1, wherein a spine-board is removably attached to the platform; said spine-board having a thickness between 1 inch to 3 inches, a width between 12 inches to 24 inches, and a length of 30 inches to 45 inches.
16. The vehicle of claim 6, further comprising a removable flexible mesh attached to the platform, said mesh having a width between 12 inches to 30 inches and a length of 30 inches to 65 inches.
17. The vehicle of claim 16, wherein said flexible mesh is manufactured from nylon.
18. The vehicle of claim 1, further comprising a locking mechanism on both sides of a front end of the step-through structural frame and a locking mechanism on both sides of a rear end of the step-through structural frame; wherein said locking mechanism secures a sling.
19. The vehicle of claim 18, wherein said sling is between 50 inches to 70 inches in length and 40 inches to 50 inches in width.
20. The vehicle of claim 18, wherein the sling is a full-body sling.
21. The vehicle of claim 18, wherein the sling is a split leg sling.
22. The vehicle of claim 1, further comprising hooks on said step-through structural frame.
23. The vehicle of claim 1, further comprising containers useful for retaining oxygen bottles on the step-through structural frame.
24. The vehicle of claim 1, comprising enclosed chambers at a rear end of the vehicle for storage of automated external defibrillator, Kendrick Extrication Device, cervical collar and other emergency medical supplies.
25. The vehicle of claim 1, further comprising a hands-free communication system.
26. The vehicle of claim 1, wherein a helmet is removably attached to the front flat surface of the platform, said helmet comprising an audio receiver and a microphone.
27. The vehicle of claim 1, wherein said motorcycle has at least three wheels.
28. The vehicle of claim 1, wherein said motorcycle is powered by electricity, solar, internal combustion engine or combinations thereof.
29. The vehicle of claim 1, further comprising an additional seat attached to the rear of said driver’s seat.
30. The vehicle of claim 1, wherein a cover is removably attached to the sides of each rear surface of the platform.
31. An emergency medical transport vehicle, comprising:
a motorcycle having a step-through structural frame;
a platform horizontally disposed along a wheel-base, wherein said platform has a front flat surface, and two rear surfaces extending from said front flat surface on either side of a rear wheel, said rear surfaces each having sides extending vertically therefrom along the wheel-base; and
a movable seat for a driver that is detachably mounted to a seat-frame.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating an MOS structure, the method comprising the steps of:
providing a semiconductor substrate;
fabricating a gate stack on the semiconductor substrate;
using the gate stack as mask, implanting impurity dopants into a semiconductor material disposed proximate to the gate stack, wherein the semiconductor material has a first surface;
etching a trench into the semiconductor material such that the semiconductor material has a trench surface within the trench;
forming a metal silicide layer on the first surface of the semiconductor material and on the trench surface; and
fabricating a contact to at least a portion of the metal silicide layer on the first surface and at least a portion of the metal silicide layer on the trench surface.
2. The method of claim 1, further comprising, before implanting impurity dopants, epitaxially growing a silicon-comprising material on the semiconductor substrate, wherein the semiconductor material comprises the epitaxially-grown silicon-comprising material, and wherein implanting impurity dopants into the semiconductor material comprises implanting the impurity dopants into the epitaxially-grown silicon-comprising material.
3. The method of claim 2, wherein implanting impurity dopants into the epitaxially-grown silicon-comprising material further comprises implanting the impurity dopants into the semiconductor substrate.
4. The method of claim 2, wherein etching the trench into the semiconductor material comprises etching the trench into the epitaxially-grown silicon-comprising material such that the trench terminates within the epitaxially-grown silicon-comprising material.
5. The method of claim 2, wherein etching the trench into the semiconductor material comprises etching the trench into the epitaxially-grown silicon-comprising material and the semiconductor substrate.
6. The method of claim 2, wherein etching the trench comprises:
depositing a dielectric material layer overlying the epitaxially-grown silicon-comprising material;
anisotropically etching the dielectric material layer to form a spacer about the gate stack; and
using the spacer as an etch mask, etching the epitaxially-grown silicon-comprising material.
7. The method of claim 1, wherein the semiconductor material is the semiconductor substrate, wherein implanting impurity dopants comprises implanting the impurity dopants into the semiconductor substrate, and wherein etching the trench into the semiconductor material comprises etching the trench into the semiconductor substrate.
8. The method of claim 1, wherein fabricating the contact comprises fabricating the contact so that sidewalls of the contact terminate at the metal silicide layer on the first surface.
9. The method of claim 1 wherein etching the trench into the semiconductor material creates two fins bounding the trench, and wherein each fin terminates at the first surface.
10. The method of claim 9 wherein the metal silicide layer is formed on the first surface on at least a portion of each fin, the method further comprising fabricating the contact to at least a portion of the metal silicide layer on the first surface of each fin.
11. A method for fabricating an MOS structure, the method comprising the steps of:
providing a semiconductor substrate;
fabricating a gate stack on the semiconductor substrate;
forming an impurity-doped region within the semiconductor substrate aligned with the gate stack;
fabricating a trench bounded by two fins by (a) epitaxially growing a layer of silicon-comprising material overlying the semiconductor substrate, wherein the silicon-comprising material defines a first surface, and by (b) etching the epitaxially-grown silicon-comprising material to form the trench between the two fins on the semiconductor substrate, wherein the trench defines a trench surface and the fins terminate at the first surface; and
forming a metal silicide layer on the trench surface and the first surface; and
fabricating a contact to at least a portion of the metal silicide layer on the first surface and at least a portion of the metal silicide layer on the trench surface.
12. The method of claim 11, wherein the silicon-comprising material is selected from the group consisting of relatively pure silicon, a silicon- and carbon-comprising material, and a silicon- and germanium-comprising material.
13. The method of claim 11 wherein forming the impurity-doped region within the semiconductor substrate aligned with the gate stack uses the gate stack as a mask and implants impurity dopants into the semiconductor material disposed proximate to the gate stack.
14. The method of claim 13, wherein the trench is fabricated before the impurity-doped region is formed, and wherein the impurity dopants are implanted into the epitaxially-grown silicon-comprising material.
15. The method of claim 14, wherein implanting impurity dopants into the epitaxially-grown silicon-comprising material further comprises implanting the impurity dopants into the semiconductor substrate.
16. The method of claim 11, wherein fabricating the trench causes the trench to terminate within the epitaxially-grown silicon-comprising material.
17. The method of claim 11, wherein fabricating the trench causes the trench to terminate within the semiconductor substrate.
18. The method of claim 11, wherein fabricating the contact comprises terminating sidewalls of the contact at the metal silicide layer on the first surface.
19. An MOS structure comprising:
a semiconductor substrate;
a gate stack formed on the semiconductor substrate;
an impurity-doped semiconductor material disposed proximate to the gate stack, wherein the impurity-doped semiconductor material has a first surface;
a trench disposed at least partially within the impurity-doped semiconductor material, wherein the impurity-doped semiconductor material has a trench surface within the trench;
a metal silicide layer disposed on the first surface and on the trench surface; and
a conductive contact extending to at least a portion of the metal silicide layer on the first surface and at least a portion of the metal silicide layer on the trench surface.
20. The MOS structure of claim 19 wherein the trench is bound by two fins formed by the impurity-doped semiconductor material disposed proximate to the gate stack, and wherein the tins terminate at the first surface.