1. In a back-illuminated type solid-state image pickup device in which a read circuit for reading a signal from a photo-electric conversion element formed on a substrate is formed on one surface of said substrate, incident light being introduced into said back-illuminated type solid-state image pickup device from the other surface of said semiconductor substrate, a solid-state image pickup device comprising:
a photo-electric conversion region formed under at least a portion of said read circuit to generate electric charges; and
an electric charge accumulation region formed on said photo-electric conversion element at its one surface side of said substrate, wherein electric charges are collected to said electric charge accumulation region by an electric field formed within said photo-electric conversion element.
2. A solid-state image pickup device according to claim 1, wherein said photo-electric conversion region within said photo-electric conversion element and said electric charge accumulation region have therebetween formed a potential distribution such that potential is increased from said photo-electric conversion region to said electric charge accumulation region.
3. A solid-state image pickup device according to claim 2, wherein said photo-electric conversion element has a potential distribution of which potential is increased from the other surface of said substrate to one surface along the depth direction of said substrate.
4. In a method of manufacturing a back-illuminated type solid-state image pickup device in which a read circuit for reading a signal from a photo-electric conversion element formed on a substrate is formed on one surface of said substrate, incident light being introduced into said back-illuminated type solid-state image pickup device from the other surface of said semiconductor substrate, a method of manufacturing a solid-state image pickup device comprising the steps of:
forming a photo-electric conversion region under at least a portion of said read circuit to generate electric charges;
forming an electric charge accumulation region on said photo-electric conversion element at its one surface side of said substrate; and
collecting electric charges to said electric charge accumulation region by an electric field formed within said photo-electric conversion element.
5. A method of manufacturing a solid-state image pickup device according to claim 4, wherein said photo-electric conversion element has a potential distribution of which potential is increased from the other surface of said substrate to one surface along the depth direction of said substrate.
6. A method of manufacturing a solid-state image pickup device according to claim 4, wherein said photo-electric conversion element on the other side of said semiconductor substrate of a semiconductor well region of said photo-electric conversion element has a potential distribution of which potential is increased from the other surface of said semiconductor substrate to one surface of said semiconductor substrate.
7. In a method of manufacturing a solid-state image pickup device including a semiconductor well region, a method of manufacturing a solid-state image pickup device according to claim 4, wherein said semiconductor well region has a portion contacting with said photo-electric conversion element, said portion having an impurity concentration which is decreased progressively or stepwise from other surface of said semiconductor substrate to one surface of said semiconductor substrate.
8. In a method of manufacturing a solid-state image pickup device including a pixel separating region to separate said photo-electric conversion element, a method of manufacturing a solid-state image pickup device according to claim 4, wherein said pixel separating region has an impurity concentration which is decreased progressively or stepwise from the other surface of said semiconductor substrate to one surface of said semiconductor substrate.
9. A method of manufacturing a solid-state image pickup device according to claim 4, wherein said photo-electric conversion portion and said electric charge accumulation region within said photo-electric conversion element have formed therebetween a potential distribution which is increased from said photo-electric conversion portion to said electric charge accumulation region.
10. A method of manufacturing a solid-state image pickup device according to claim 4, wherein said photo-electric conversion element has a potential distribution of which potential is increased from the other surface of said substrate to one surface in the substrate depth direction.
11. In a method of manufacturing a back-illuminated type solid-state image pickup device in which a buried wiring connected to a plurality of pixels is formed on one surface of a semiconductor layer in which said plurality of pixels containing a photo-electric conversion element and a field effect transistor is formed, the other surface of said semiconductor layer serving as a light-receiving portion of said photo-electric conversion element, a method of manufacturing a solid-state image pickup device comprising the steps of:
a step of forming a plurality of pixels containing said photo-electric conversion element and said field-effect transistor on one principal plane of a semiconductor substrate;
a step of forming buried wirings, connected to said plurality of pixels, on one principal plane of said semiconductor substrate;
a step of bonding a supporting substrate to one principal plane of said semiconductor substrate;
a step of decreasing a thickness of said supporting substrate from the opposite side of a bonding surface;
a step of forming penetrating wirings, which pass through said supporting substrate, such that said penetrating wirings are connected to said buried wirings; and
a step of decreasing a thickness of said semiconductor substrate from the other principal plane of said semiconductor substrate to provide said semiconductor layer until said photo-electric conversion element becomes able to receive light from the other principal plane of said semiconductor substrate.
12. A method of manufacturing a solid-state image pickup device according to claim 11, further comprising the step of forming a projection electrode, projected from the surface of said supporting substrate, on the surface of said penetrating wirings after said penetrating wiring forming process.
13. A method of manufacturing a solid-state image pickup device according to claim 11, wherein said semiconductor substrate is an SOI (semiconductor on insulator) substrate having a semiconductor layer formed on a principal substrate through an insulating layer, said principal substrate being removed in said process for decreasing the thickness of said semiconductor substrate from the other principal plane of said semiconductor substrate until said insulating layer is exposed.
14. In a method of manufacturing a back-illuminated type solid-state image pickup device in which buried wirings connected to a plurality of pixels are formed on one plane of a semiconductor layer on which said plurality of pixels containing a photo-electric conversion element and a field-effect transistor is formed, the other plane of said semiconductor layer becoming a light-receiving surface of said photo-electric conversion element, a method of manufacturing a solid-state image pickup device comprising the steps of:
a step of forming a plurality of pixels containing said photo-electric conversion element and said field-effect transistor on one principal plane of a semiconductor substrate;
a step of forming buried wirings, which are connected to said plurality of pixels, on one principal plane of said semiconductor substrate;
a step of forming a supporting substrate wiring which reaches from the surface of one principal plane of a supporting substrate to at least a predetermined depth;
a step of bonding said one principal plane of said semiconductor substrate to one principal plane of said supporting substrate;
a step of decreasing a thickness of said semiconductor substrate from other principal plane of said semiconductor substrate to provide said semiconductor layer until said photo-electric conversion element becomes able to receive light from the other principal plane of said semiconductor substrate;
a step of forming a connection wiring to connect said supporting substrate wiring and said buried wiring; and
a step of decreasing a thickness of said supporting substrate from the other surface side of said supporting substrate until said supporting substrate wiring is exposed so that said supporting substrate wiring is formed as a penetrating wiring which penetrates said supporting substrate.
15. A method of manufacturing a solid-state image pickup device according to claim 14, further comprising a step of forming a projection electrode, projected from the surface of said supporting substrate, on the surface of said penetrating wiring after said process of forming said supporting substrate wiring as said penetrating wiring.
16. A method of manufacturing a solid-state image pickup device according to claim 14, wherein said semiconductor substrate is an SOI substrate in which a semiconductor layer is formed on a principal substrate through an insulating layer, said principal substrate being removed until said insulating film is exposed in said process of decreasing the thickness of said semiconductor substrate from other principal plane side of said semiconductor substrate.
17. A back-illuminated type solid-state image pickup device comprising:
buried wirings connected to a plurality of pixels and a penetrating wiring penetrated through a supporting substrate so as to be connected to said buried wiring on one plane of a semiconductor layer on which a plurality of pixels containing a photo-electric conversion element and a field-effect transistor is formed, wherein the other plane of said semiconductor substrate becomes a light-receiving plane of said photo-electric conversion element.
18. In a camera including a back-illuminated type solid-state image pickup device in which a read circuit for reading a signal from a photo-electric conversion element formed on a substrate is formed on one surface of said substrate, incident light being introduced into said back-illuminated type solid-state image pickup device from the other surface of said semiconductor substrate, a camera comprising:
a photo-electric conversion region formed under at least a portion of said read circuit to generate electric charges; and
an electric charge accumulation region formed on said photo-electric conversion element at its one surface side of said substrate, wherein electric charges are collected to said electric charge accumulation region by an electric field formed within said photo-electric conversion element.
19. In a method of manufacturing a camera including a back-illuminated type solid-state image pickup device in which a read circuit for reading a signal from a photo-electric conversion element formed on a substrate is formed on one surface of said substrate, incident light being introduced into said back-illuminated type solid-state image pickup device from the other surface of said semiconductor substrate, a method of manufacturing a camera comprising the steps of:
forming a photo-electric conversion region under at least a portion of said read circuit to generate electric charges;
forming an electric charge accumulation region on said photo-electric conversion element at its one surface side of said substrate; and
collecting electric charges to said electric charge accumulation region by an electric field formed within said photo-electric conversion element.
20. In a method of manufacturing a camera including a back-illuminated type solid-state image pickup device in which a buried wiring connected to a plurality of pixels is formed on one surface of a semiconductor layer in which said plurality of pixels containing a photo-electric conversion element and a field effect transistor is formed, the other surface of said semiconductor layer serving as a light-receiving portion of said photo-electric conversion element, a method of manufacturing a camera comprising the steps of:
a step of forming a plurality of pixels containing said photo-electric conversion element and said field-effect transistor on one principal plane of a semiconductor substrate;
a step of forming buried wirings, connected to said plurality of pixels, on one principal plane of said semiconductor substrate;
a step of bonding a supporting substrate to one principal plane of said semiconductor substrate;
a step of decreasing a thickness of said supporting substrate from the opposite side of a bonding surface;
a step of forming penetrating wirings, which pass through said supporting substrate, such that said penetrating wirings are connected to said buried wirings; and
a step of decreasing a thickness of said semiconductor substrate from the other principal plane of said semiconductor substrate to provide said semiconductor layer until said photo-electric conversion element becomes able to receive light from the other principal plane of said semiconductor substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compressor casing assembly, comprising:
a forward compressor casing;
a removable cover
a seal assembly
a midcompressor casing having a cavity adapted to receive the seal assembly, and a cover groove adapted to receive the removable cover; and
wherein the removable cover secures the seal assembly.
2. The compressor casing assembly of claim 1, wherein the removable cover is removably fastened to the midcompressor casing.
3. The compressor casing assembly of claim 1, wherein the cavity is configured to prevent movement of the seal assembly in a radial direction.
4. The compressor casing assembly of claim 1, wherein the seal assembly comprises a T-shaped member having a first projection and a second projection, and wherein the cavity has a notch adapted to receive the second projection.
5. The compressor casing assembly of claim 4, a removable cover has a cover notch adapted to receive first projection.
6. The compressor casing assembly of claim 1, wherein the removable cover comprises an arcuate member.
7. The compressor casing assembly of claim 1, wherein the forward compressor casing is disposed in contact with the removable cover.
8. A turbine engine, comprising:
a midcompressor casing having a face surface and an inner surface, the midcompressor casing having a cavity formed on the inner surface and a groove formed on the face surface;
a plurality of arcuate seal segments configured to be inserted into the cavity;
a removable cover disposed in contact with at least one of the plurality of arcuate seal segments and being removably secured to the midcompressor casing.
9. The turbine engine of claim 8, wherein each of the plurality of arcuate seal segments comprises a sealing surface extending a full circumferential length along each of the plurality of arcuate seal segments.
10. The turbine engine of claim 9, wherein the sealing surface comprises one of an abradable seal surface, a honeycomb seal surface, and a brush seal surface.
11. The turbine engine of claim 8 wherein the removable cover is an arcuate member.
12. The turbine engine of claim 8 further comprising a forward compressor casing disposed adjacent to the removable cover.
13. An assembly, comprising:
a midcompressor casing having a face surface and an inner surface, the inner surface having a cavity and the face surface having a cover groove;
a plurality of arcuate seal segments configured to be inserted into the cavity; and
a removable cover adapted to be inserted into the cover groove, the removable cover disposed in contact with at least some of the plurality of arcuate seal segments and secured to the midcompressor casing.
14. The assembly of claim 13, wherein the removable cover is removably fastened to the midcompressor casing.
15. The assembly of claim 13 wherein the cavity is configured to prevent movement of the plurality of arcuate seal segments in a radial direction.
16. The assembly of claim 13 wherein the removable cover is an arcuate member having a peripheral length that is longer than a peripheral length of each of the plurality of arcuate seal segments.
17. The assembly of claim 13 wherein each of the plurality of arcuate seal segments comprises a sealing surface extending a full circumferential length along each of the plurality of arcuate seal segments, the sealing surface extending a distance above and below a radially inner surface of the midcompressor casing when each of the plurality of arcuate seal segments is coupled the midcompressor casing.
18. The assembly of claim 17 wherein the sealing surface comprises one of an abradable seal surface, a honeycomb seal surface, and a brush seal surface.
19. The assembly of claim 13 wherein each of the plurality of arcuate seal segments comprises a T-shaped member having a first projection that engages a notch formed on the midcompressor casing and a cover groove formed on the removable cover.
20. The assembly of claim 13 further comprising a forward compressor casing disposed in contact with removable cover.