1. An image sensor, comprising:
a photodiode section;
a charge storage section;
a charge transfer section;
a first control gate section provided between the photodiode section and the charge storage section to control movement of a signal charge from the photodiode section to the charge storage section; and
a second control gate section provided between the charge storage section and the charge transfer section to control movement of the signal charge from the charge storage section to the charge transfer section,
the charge storage section storing the signal charge in a PIN-ing state.
2. The sensor according to claim 1, wherein the charge storage section includes a region of a first conductivity type and an electrode covering the region with an intervention of an insulation film therebetween, and a predetermined DC bias voltage is applied to the electrode.
3. The sensor according to claim 1, wherein the charge storage section includes a first region of a first conductivity type and a second region of a second conductivity type formed in a surface portion of the first region.
4. The sensor according to claim 1, further comprising an additional charge storage region formed in contact with the photodiode section to temporarily store the signal charge, the first control gate being provided between the additional charge storage region and the charge storage section.
5. The image sensor according to claim 4, wherein each of the charge storage region and the additional charge storage region includes a region of a first conductivity type and an electrode covering the region with an intervention of an insulation film therebetween, and a predetermined DC bias voltage is applied to the electrode.
6. An image sensor, comprising:
a photodiode section;
a charge storage section;
a charge transfer section;
a first control gate section between the photodiode section and the charge storage section to control movement of a signal charge from the photodiode section to the charge storage section; and
a second control gate section provided between the charge storage section and the charge transfer section to control movement of the signal charge from the charge storage section to the charge transfer section,
the charge storage section storing the signal charge in a PIN-ing state, and
the photodiode section, the charge storage section, the charge transfer section, the first control gate section and the second control gate section are provided in a semiconductor region of a first conductivity type formed in a semiconductor body of a second conductivity type.
7. The sensor according to claim 6, wherein the semiconductor region includes a first region in which the photodiode section is formed, and a second region in which the charge storage section and the second control gate section are formed, the second region being higher in impurity concentration than the first region, and the first control gate section is formed astride the first and second regions.
8. The sensor according to claim 7, wherein each of the first and second control gate sections includes a third region of the first conductivity type that is lower in impurity concentration than the first and second regions and a gate electrode covering the third region with an intervention of an insulation film therebetween.
9. The sensor according to claim 6, wherein each of the first and second control gate sections includes a surface region of the first conductive type selectively formed in the semiconductor region with an impurity concentration lower than the semiconductor region and a gate electrode covering the surface region with an intervention of an insulation film therebetween, and a portion of the semiconductor region in which the charge storage section is formed is lower in impurity concentration that a portion of the semiconductor region in which the photodiode section is formed.
10. The sensor according to claim 6, wherein the charge storage section includes a storage gate electrode to which a DC voltage is applied, the storage gate electrode being provided over the semiconductor region with an intervention of a gate insulation film therebetween.
11. The sensor according to claim 6, wherein the charge storage section includes a surface region of the second conductive type selectively formed in a portion of the semiconductor region in which the charge storage section is formed.
12. The sensor according to claim 6, further comprising an additional charge storage section provided between the photodiode section and the first control gate section, the additional charge storage section has a gate electrode to which a DC voltage is applied, the gate electrode being provided over a portion of the semiconductor region in which the additional charge storage section is formed with an intervention of a gate insulation film therebetween.
13. The sensor according to claim 6, further comprising an additional charge storage section provided in a portion of the semiconductor region between the photodiode section and the first control gate section, the portion of the semiconductor region having a surface part that is lower in impurity concentration than a portion of the semiconductor region in which the charge storage section is formed.
14. The sensor according to claim 6, further comprising a reset section formed adjacently to the charge storage section to discharge the signal charge from the charge storage section.
15. The sensor according to claim 12, further comprising a reset section formed adjacently to the charge storage section to discharge the signal charge from the charge storage section and from the additional charge storage section.
16. The CCD image sensor according to claim 14, further comprising a reset gate resetting the signal charge of the photodiode section.
17. The CCD image sensor according to claim 14, further comprising an overflow drain for the photodiode section.
18. The CCD image sensor according to claim 15, further comprising a reset gate resetting the signal charge of the photodiode section.
19. The CCD image sensor according to claim 15, further comprising an overflow drain for the photodiode section.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An RF module comprising:
a waveguide having an area which is surrounded by a pair of ground electrodes and a conductor for making electrical connection between the pair of ground electrodes, the pair of ground electrodes being provided so as to face each other, and in which electromagnetic waves in the TE mode can propagate and a one-wavelength resonator is formed; and
a pair of output lines connected to portions corresponding to half-wavelength resonance regions of the one-wavelength resonator in one of the pair of ground electrodes.
2. The RF module according to claim 1, wherein the pair of output lines is formed so that electromagnetic waves in the TEM mode can propagate.
3. The RF module according to claim 1, comprising:
a half-wavelength resonator formed inside the waveguide and coupled to the one-wavelength resonator; and
an input line which is connected to a portion corresponding to the half-wavelength resonator in one of the pair of ground electrodes and through which electromagnetic waves in the TEM can be input as electromagnetic waves in the TE mode to the half-wavelength resonator.
4. The RF module according to claim 3, wherein the half-wavelength resonator and the one-wavelength resonator are coupled to each other via a coupling window.
5. The RF module according to claim 3, further comprising at least one another resonator which is formed between the half-wavelength resonator and the one-wavelength resonator and coupled to both of the resonators via a coupling window.
6. The RF module according to claim 3, wherein the input line is any one of a strip line, a microstrip line, and a coplanar line.
7. The RF module according to claim 1, further comprising:
another one-wavelength resonator formed inside the waveguide and coupled to the one-wavelength resonator; and
a pair of input lines which are connected to portions corresponding to half-wavelength resonance regions of the another one-wavelength resonator in one of the pair of ground electrodes and through which electromagnetic waves in the TEM mode can be input as electromagnetic waves in the TE mode to the another one-wavelength resonator.
8. The RF module according to claim 7, wherein the another one-wavelength resonator and the one-wavelength resonator are coupled to each other via a coupling window.
9. The RF module according to claim 7, further comprising at least one resonator formed between the another one-wavelength resonator and the one-wavelength resonator and coupled to both of the resonators via a coupling window.
10. The RF module according to claim 1, wherein the output line is any one of a strip line, a microstrip line, and a coplanar line.