1. A film formation apparatus for a semiconductor process, comprising:
a process container configured to accommodate a plurality of target substrates stacked at intervals;
a support member configured to support the target substrates inside the process container;
a heater configured to heat the target substrates inside the process container;
an exhaust system configured to exhaust gas inside the process container;
a source gas supply circuit configured to supply a source gas into the process container, the source gas being for depositing a thin film on the target substrates;
a mixture gas supply circuit configured to supply a mixture gas into the process container, the mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas; and
a control section configured to control an operation of the apparatus including the mixture gas supply circuit,
wherein the mixture gas supply circuit comprises
a gas mixture tank disposed outside the process container and configured to mix the doping gas with the dilution gas to form the mixture gas,
a mixture gas supply line configured to supply the mixture gas from the gas mixture tank into the process container,
a doping gas supply circuit configured to supply the doping gas into the gas mixture tank, and
a dilution gas supply circuit configured to supply the dilution gas into the gas mixture tank.
2. The apparatus according to claim 1, wherein the mixture gas supply circuit includes a merged gas line for the doping gas and the dilution gas from the doping gas supply circuit and the dilution gas supply circuit to be merged therein and then supplied into the gas mixture tank.
3. The apparatus according to claim 1, wherein the mixture gas supply circuit further comprises a first switching valve disposed on the mixture gas supply line, and the control section is configured to keep the first switching valve closed so as to store the doping gas and the dilution gas from the doping gas supply circuit and the dilution gas supply circuit within the gas mixture tank, and to then open the first switching valve so as to supply the mixture gas into the process container.
4. The apparatus according to claim 3, wherein the mixture gas supply circuit further comprises a pressure meter configured to measure pressure inside the gas mixture tank, and the control section is configured to open and close the first switching valve, based on measurement values by the pressure meter.
5. The apparatus according to claim 1, wherein the gas mixture tank has a volume of 200 to 5,000 cc.
6. The apparatus according to claim 1, wherein the mixture gas supply circuit further comprises a first switching valve disposed on the mixture gas supply line, and the control section is configured to pulse-wise open and close the first switching valve while the doping gas and the dilution gas are continuously supplied from the doping gas supply circuit and the dilution gas supply circuit into the gas mixture tank.
7. The apparatus according to claim 6, wherein the mixture gas supply circuit further comprises a pressure meter configured to measure pressure inside the gas mixture tank, and the control section is configured to pulse-wise open and close the first switching valve, based on measurement values by the pressure meter.
8. The apparatus according to claim 6, wherein the source gas supply circuit comprises a source gas supply line configured to supply the source gas into the process container, and a second switching valve disposed on the source gas supply line, and the control section is configured to pulse-wise open and close the second switching valve in synchronism with operation to pulse-wise open and close the first switching valve.
9. The apparatus according to claim 8, wherein the apparatus further comprises a purge gas supply circuit configured to supply a purge gas into the process container, the purge gas supply circuit comprises a purge gas supply line configured to supply the purge gas into the process container, and a third switching valve disposed on the purge gas supply line, and the control section is configured to pulse-wise close and open the third switching valve in synchronism with operation to pulse-wise open and close the first and second switching valves.
10. The apparatus according to claim 9, wherein the purge gas supply line is connected to the mixture gas supply line downstream from the first switching valve.
11. A film formation method for a semiconductor process, comprising:
heating a plurality of target substrates stacked at intervals inside a process container;
supplying a source gas into the process container, the source gas being for depositing a thin film on the target substrates; and
supplying a mixture gas from a gas mixture tank disposed outside the process container into the process container, while supplying a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas into the gas mixture tank to form the mixture gas.
12. The method according to claim 11, comprising performing operation to pulse-wise supply the mixture gas from the gas mixture tank into the process container, while continuously supplying the doping gas and the dilution gas into the gas mixture tank.
13. The method according to claim 12, comprising performing operation to pulse-wise supply the mixture gas, based on measurement values by a pressure meter configured to measure pressure inside the gas mixture tank.
14. The method according to claim 12, comprising performing operation to pulse-wise supply the source gas in synchronism with operation to pulse-wise supply the mixture gas.
15. The method according to claim 14, comprising performing operation to pulse-wise supply a purge gas into the process container in synchronism with an operation to pulse-wise supply the mixture gas and the source gas, in opposite phase.
16. A computer readable medium containing program instructions for execution on a processor, which, when executed by the processor, cause a film-formation apparatus for a semiconductor process to execute
heating a plurality of target substrates stacked at intervals inside a process container;
supplying a source gas into the process container, the source gas being for depositing a thin film on the target substrates; and
supplying a mixture gas from a gas mixture tank disposed outside the process container into the process container, while supplying a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas into the gas mixture tank to form the mixture gas.
17. The medium according to claim 16, wherein the program instructions, when executed by the processor, cause the film-formation apparatus to execute
performing operation to pulse-wise supply the mixture gas from the gas mixture tank into the process container, while continuously supplying the doping gas and the dilution gas into the gas mixture tank.
18. The medium according to claim 17, wherein the program instructions, when executed by the processor, cause the film-formation apparatus to execute
performing operation to pulse-wise supply the mixture gas, based on measurement values by a pressure meter configured to measure pressure inside the gas mixture tank.
19. The medium according to claim 17, wherein the program instructions, when executed by the processor, cause the film-formation apparatus to execute
performing operation to pulse-wise supply the source gas in synchronism with operation to pulse-wise supply the mixture gas.
20. The medium according to claim 19, wherein the program instructions, when executed by the processor, cause the film-formation apparatus to execute
performing operation to pulse-wise supply a purge gas into the process container in synchronism with an operation to pulse-wise supply the mixture gas and the source gas, in opposite phase.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A robot comprising:
at least one link rotatably provided around an axis;
a motor to rotate the at least one link around the axis;
a first sensor to detect a rotation state of the motor;
a second sensor to detect a rotation state of the at least one link; and
a controller configured to control the rotation state of the at least one link based on first information from the first sensor,
the controller comprising:
a first comparator configured to compare the first information received from the first sensor with a first expected value that is determined according to the first information outputted from the first sensor while the motor rotates under normal condition based on a command signal to the motor;
a second comparator configured to compare second information received from the second sensor with a second expected value that is determined according to the second information outputted from the second sensor while the motor rotates under the normal condition based on the command signal; and
a determination device configured to determine an abnormality in the first sensor and an abnormality in the second sensor based on each comparison result of the first comparator and the second comparator.
2. The robot according to claim 1,
wherein the first sensor comprises an encoder attached to the motor, and
wherein the second sensor comprises any one of a speed sensor, an acceleration sensor, and a strain sensor.
3. The robot according to claim 2,
wherein the at least one link includes link dodies, and
wherein the link bodies are sequentially coupled from a base via the respective shafts, and constitute an arm unit.
4. The robot according to claim 3, wherein the second sensor is provided to correspond to each of the at least one link which is driven by each motor.
5. The robot according to claim 3, wherein the second sensor comprises the acceleration sensor and is provided at a distal end of the at least one link positioned at the most distal end from the base.
6. The robot according to claim 1,
wherein the at least one link includes link dodies, and
wherein the link bodies are sequentially coupled from a base via the respective shafts, and constitute an arm unit.
7. The robot according to claim 6, wherein the second sensor is provided to correspond to each of the at least one link which is driven by each motor.
8. The robot according to claim 6, wherein the second sensor comprises the acceleration sensor and is provided at a distal end of the at least one link positioned at the most distal end from the base.
9. A robot comprising:
means for rotating a link around an axis;
first means for detecting a rotation state of the means for rotating;
second means for detecting a rotation state of the link;
a first comparison means for comparing first information received from the first means with a first expected value that is determined according to the first information outputted from the first means while the means for rotating rotates under normal condition based on a command signal to the means for rotating;
a second comparison means for comparing, second information received from the second means with a second expected value that is determined according to the second information outputted from the second means while the means for rotating under the normal condition based on the command signal; and
means for determining an abnormality in the first means and an abnormality in the second means based on each comparison result of the first comparison means and the second comparison means.