1. A bicycle end cap having a first end and a second end that is opposite to the first end for attaching to a bicycle line shape member, the bicycle end cap comprising:
a tubular portion defining a first opening that is arranged at the first end and a receiving space that is dimension to axially receive the line shape member from the first opening; and
an attachment structure configured to attach a pulling member having a cable portion and a head portion that has larger diameter than the cable portion, the attachment structure configured to position the head portion relative to the tubular portion as the cable portion is pulled toward the second end.
2. The bicycle end cap according to claim 1, wherein
the attachment structure includes a positioning portion arranged at the receiving space, and a through hole arranged at the second end such that the cable portion passes through therein as the head portion is disposed at the positioning portion.
3. The bicycle end cap according to claim 2, wherein
the through hole extends along a center axis of the tubular portion.
4. The bicycle end cap according to claim 1, wherein
the tubular portion includes a cylindrical outer surface.
5. The bicycle end cap according to claim 1, wherein
the second end has a hemispherical shaped.
6. The bicycle end cap according to claim 5, wherein
the tubular portion includes a cylindrical outer surface which connects to the second end without unevenness.
7. The bicycle end cap according to claim 2, wherein
the second end has at least one additional through hole that is transverse to non-parallel to a center axis of the tubular portion.
8. The bicycle end cap according to claim 7, wherein
the through hole and the at least one additional through hole are arranged so as to be not communicated each other.
9. The bicycle end cap according to claim 8, wherein
the through hole extends along a center axis of the tubular portion.
10. The bicycle end cap according to claim 9, wherein
the at least one additional through hole extends perpendicularly relative to the center axis of the tubular portion as the tubular portion is seen in a radial direction of the tubular portion.
11. The bicycle end cap according to claim 10, wherein
the at least one additional through hole includes a first additional through hole and a second additional through hole, and
the through hole is arranged between the first and second additional through holes.
12. A hydraulic bicycle structure including the bicycle end cap according to claim 1, the hydraulic bicycle structure comprising:
a hydraulically operated device; and
a hydraulic hose having a first connecting end attached to the hydraulically operated device and a second connecting end with the bicycle end cap attached thereto.
13. A hydraulic bicycle structure including the bicycle end cap according to claim 1, the hydraulic bicycle structure comprising:
a hydraulic actuating device; and
a hydraulic hose having a first connecting end with the bicycle end cap attached thereto and a second connecting end attached to the hydraulic actuating device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A magnetic memory device comprising:
a substrate; and
a wiring layer formed on the substrate,
wherein the wiring layer includes a lower electrode, a magneto-resistive element formed on the lower electrode and configured to include an insulation barrier layer, at least one contact layer stacked on the magneto-resistive element, and an upper wiring connected to the contact layer, and a taper angle of a side surface of the magneto-resistive element including the insulation barrier layer, relative to a bottom surface of the magneto-resistive element, is about 60\xb0 or less.
2. The magnetic memory device according to claim 1, wherein the contact layer and the magneto-resistive element are formed in a self-alignment manner.
3. The magnetic memory device according to claim 1, further comprising a mask formed adjacent to the magneto-resistive element on the lower electrode.
4. The magnetic memory device according to claim 1, wherein the contact layer has a greater taper angle than the taper angle of the magneto-resistive element.
5. The magnetic memory device according to claim 1, wherein the magneto-resistive element includes an insulation barrier layer and at least two magnetic layers formed on both sides of the insulation barrier layer, the insulation barrier layer and the at least two magnetic layers having substantially equal etching rates with respect to an ion beam used for etching.
6. The magnetic memory device according to claim 1, wherein a junction resistance per unit area of the magneto-resistive element is 106\u03a9\xb7\u03bcm2.
7. A magnetic memory device comprising:
a substrate; and
a wiring layer formed on the substrate,
wherein the wiring layer includes a lower electrode, a magneto-resistive element formed on the lower electrode and configured to include an insulation barrier layer, at least one contact layer stacked on the magneto-resistive element, and an upper wiring connected to the contact layer, and
the magneto-resistive element has an inclined side surface which is cleaned by ion beam etching after the magneto-resistive element is formed by ion beam etching.
8. The magnetic memory device according to claim 7, wherein the cleaned inclined side surface is an exposed surface obtained by etching away an insulation film which is provided to cover an entirety of the magneto-resistive element after the magneto-resistive element is formed by the ion beam etching.
9. A magnetic memory device comprising:
a substrate; and
a wiring layer formed on the substrate,
wherein the wiring layer includes a lower electrode, a magneto-resistive element formed on the lower electrode and configured to include an insulation barrier layer, at least one contact layer stacked on the magneto-resistive element, and an upper wiring connected to the contact layer, and
an insulation film, which is provided to cover an entirety of the magneto-resistive element after the magneto-resistive element is formed by ion beam etching, is formed of a material that is more easily oxidizable than the lower electrode.
10. The magnetic memory device according to claim 9, wherein the magneto-resistive element has an inclined side surface which is cleaned by ion beam etching after the magneto-resistive element is formed by ion beam etching,
the cleaned inclined side surface is an exposed surface obtained by etching away an insulation film which is provided to cover an entirety of the magneto-resistive element after the magneto-resistive element is formed by the ion beam etching, and
a recess is formed due to over-etching by the ion beam when the magneto-resistive element is formed by the ion beam etching.
11. The magnetic memory device according to claim 7, wherein the magneto-resistive element includes an insulation barrier layer and at least two magnetic layers formed on both sides of the insulation barrier layer, the insulation barrier layer and the at least two magnetic layers having substantially equal etching rates with respect to an ion beam used for etching.
12. The magnetic memory device according to claim 9, wherein the magneto-resistive element includes an insulation barrier layer and at least two magnetic layers formed on both sides of the insulation barrier layer, the insulation barrier layer and the at least two magnetic layers having substantially equal etching rates with respect to an ion beam used for etching.