1. A drawbar clevis assembly comprising:
a drawbar having an upper inboard member, a lower outboard member and a connecting member, the inboard member having an inner end for coupling to a vehicle and an outer end joined to an upper end of the connecting member, and the outboard member having an inner end joined to a lower end of the connecting member and an outer end for coupling to an implement; and
a strap mounted to the drawbar, the strap having an inner portion, a mid portion and an outer portion, the mid portion having an opening therein, said opening receiving the upper end of the connecting member of the drawbar, and the inner portion of the strap being attached to the inboard member of the drawbar, the outboard member and the outer portion having aligned bores for receiving a drawbar pin which is insertable through the bores, the opening being oriented vertically and the connecting member extending downwardly through the opening.
2. The drawbar clevis assembly of claim 1, further comprising: a latch member mounted to the strap member, the latch member releasably retaining the drawbar pin in the bores.
3. The drawbar clevis assembly of claim 1, wherein: at least a portion of the connecting member extending substantially vertically.
4. The drawbar clevis assembly of claim 1, wherein:
the inner portion of the strap is attached to an underside of the inboard member of the drawbar.
5. A drawbar clevis assembly comprising:
a drawbar having inner end for coupling to a vehicle, an outer end for coupling to an implement and a connecting member extending substantially vertically between the inner end and the outer end; and
a strap mounted to the drawbar, the strap having an outer portion for coupling to the implement, a mid portion and an inner portion, the mid portion having an opening therein, said opening being oriented vertically and receiving an upper end of the connecting member of the drawbar, and the inner portion of the strap being attached to an underside of the inner end of the drawbar, the outer end and the outer portion having aligned bores for receiving a drawbar pin which is insertable through the bores, and all portions of the strap are lower than the inner end of the drawbar.
6. A drawbar clevis assembly comprising:
a drawbar having an upper inboard member, a lower outboard member and a connecting member, the inboard member having an inner end for coupling to a vehicle and an outer end joined to an upper end of the connecting member, and the outboard member having an inner end joined to a lower end of the connecting member and an outer end for coupling to an implement; and
a strap mounted to the drawbar, all portions of the strap being lower than the upper inboard member, the strap having a single opening therein, said opening receiving the upper end of the connecting member of the drawbar, and the strap being attached to the inboard member of the drawbar, the outboard member and the strap having aligned bores for receiving a drawbar pin which is insertable through the bores, the opening being oriented vertically and the connecting member extending downwardly through the opening.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a mirror structure for use in a microelectronic device, comprising:
forming a first mirror layer over and within one or more openings in a sacrificial spacer layer;
forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings;
subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface and leaving dielectric portions along sidewalls of the one or more openings;
forming a second mirror layer over the first mirror layer and within the one or more openings, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls.
2. The method as recited in claim 1 wherein the sacrificial spacer layer comprises photoresist.
3. The method as recited in claim 1 wherein the dielectric layer comprises an oxide.
4. The method as recited in claim 1 wherein the first mirror layer and the second mirror layer comprise aluminum or an alloy thereof.
5. The method as recited in claim 1 wherein subjecting the dielectric layer to an etch includes subjecting the dielectric layer to an anisotropic etch.
6. The method as recited in claim 1 further including patterning the first and second mirror layers to form a mirror structure, and thereafter removing the sacrificial spacer layer.
7. The method as recited in claim 1 wherein forming the first and second mirror layers includes forming the first and second mirror layers using a temperature of less than about 150\xb0 C.
8. A method for manufacturing a microelectronic device, comprising:
forming a first photoresist spacer layer over a substrate, the first photoresist spacer layer having one or more openings therein;
forming a hinge structure over the first photoresist spacer layer and within the one or more openings;
forming a second photoresist spacer layer over the hinge structure, the second photoresist spacer layer having one or more openings therein;
forming a first mirror layer over the second photoresist spacer layer and within the one or more openings in the second photoresist spacer layer;
forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings in the second photoresist spacer layer;
subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface of the first mirror layer and leaving dielectric portions along sidewalls of the one or more openings in the second photoresist spacer layer;
forming a second mirror layer over the first mirror layer and within the one or more openings in the second photoresist spacer layer, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls; and
removing the first and second photoresist spacer layers after forming the second mirror layer.
9. The method as recited in claim 8 further including patterning the first mirror layer and second mirror layer prior to removing the first and second photoresist spacer layers, thereby forming a mirror structure including the first mirror layer, dielectric portions and second mirror layer.
10. The method as recited in claim 8 wherein the dielectric layer comprises an oxide.
11. The method as recited in claim 8 wherein the first mirror layer and the second mirror layer comprise aluminum or an alloy thereof.
12. The method as recited in claim 8 wherein subjecting the dielectric layer to an etch includes subjecting the dielectric layer to an anisotropic etch.
13. The method as recited in claim 8 wherein forming the first and second mirror layers includes forming the first and second mirror layers using a temperature of less than about 150\xb0 C.
14. The method as recited in claim 8 further including forming control circuitry over or in the substrate, the control circuitry in electrical connection with the conductive feature, wherein the control circuitry, control feature, hinge structure and mirror structure form at least a portion of a digital micromirror device.
15. A microelectronic device, comprising:
a conductive feature;
a hinge structure located over and contacting the conductive feature, wherein at least a portion of the hinge structure defines a first well; and
a mirror structure located over the hinge structure, the mirror structure including:
a first mirror layer contacting the hinge structure, wherein at least a portion of the first mirror layer defines a second well;
dielectric portions located along sidewalls of the second well; and
a second mirror layer located over the first mirror layer and within the second well, the dielectric portions located between the first mirror layer and the second mirror layer along the sidewalls.
16. The microelectronic device as recited in claim 15 wherein the dielectric portions comprise an oxide.
17. The microelectronic device as recited in claim 15 wherein the dielectric portions comprise silicon dioxide.
18. The microelectronic device as recited in claim 15 wherein the first mirror layer and the second mirror layer comprise aluminum or an alloy thereof.
19. The microelectronic device as recited in claim 15 further including control circuitry in electrical connection with the conductive feature, wherein the control circuitry, control feature, hinge structure and mirror structure form at least a portion of a digital micromirror device.