1. A retaining puck for retaining a product, the retaining puck comprising:
a main body having a side surface and a bracket recess, wherein at least a portion of the side surface is continuous except for the bracket recess; and
a bracket having a mounting flange configured to mate with the bracket recess, wherein the mounting flange is received by the bracket recess, and an outer surface of the mounting flange is aligned with the continuous portion of the side surface of the main body.
2. The retaining puck of claim 1, wherein the continuous portion of the side surface defines a portion of a cylindrical shape.
3. The retaining puck of claim 1, wherein the side surface of the main body and the outer surface of the mounting flange together define a cylindrical shape.
4. The retaining puck of claim 1, wherein the side surface of the main body and the outer surface of the mounting flange have the same radius of curvature.
5. The retaining puck of claim 1, wherein the mounting flange has an inner surface that has a different shape from the outer surface of the mounting flange.
6. The retaining puck of claim 5, wherein the inner surface is defined by one or more flat surfaces, and
wherein the outer surface is defined by a continuously curved surface.
7. A display system, comprising:
the retaining puck of claim 1; and
a display stem having an outer surface defining a shape at its proximal portion that corresponds to a shape defined together by the side surface of the main body of the retaining puck and the outer surface of the mounting flange.
8. The display system of claim 7, wherein the side surface of the main body, the outer surface of the mounting flange, and the outer surface of the proximal portion of the display stem together define a cylindrical shape.
9. The display system of claim 7, wherein a diameter of the side surface of the main body and the outer surface of the mounting flange at a distal end of the puck main body is the same as a diameter of the outer surface of the display stem at a proximal end thereof.
10. The display system of claim 7, wherein the outer surface of the display stem at its proximal portion is aligned with the outer surface of the mounting flange and the side surface of the main body of the retaining puck when the retaining puck is coupled to the display stem.
11. The display system of claim 7, comprising:
a product connector cable having a product cable plug coupled to the retaining puck, wherein the product cable plug is configured to receive power or data through the coupling with the retaining puck and to transmit the power or data to a product coupled to a product connection end of the product connector cable.
12. A display system, comprising:
a retaining puck having a main body having a side surface; and
a display stem having an outer surface defining a shape at its proximal portion that corresponds to a shape defined by the side surface of the retaining puck,
wherein the outer surface of the display stem at its proximal portion is aligned with the side surface of the main body of the retaining puck when the retaining puck is coupled to the display stem.
13. The display system of claim 12, wherein the outer surface of the display stem at its proximal portion and at least a portion of the side surface of the retaining puck together define a cylindrical shape.
14. The display system of claim 12, further comprising a bracket having a mounting flange, wherein an outer surface of the mounting flange is aligned with a portion of the side surface of the main body.
15. The display system of claim 14, wherein the side surface of the main body and the outer surface of the mounting flange together define a cylindrical shape.
16. A method for displaying a product, the method comprising:
fixing a product to a retaining puck, wherein the retaining puck comprises:
a main body having a side surface and a bracket recess, wherein at least a portion of the side surface is continuous except for the bracket recess; and
a bracket having a mounting flange configured to mate with the bracket recess,
wherein the mounting flange is received by the bracket recess, and an outer surface of the mounting flange is aligned with the continuous portion of the side surface of the main body; and
aligning the side surface of the main body of the retaining puck and the outer surface of the mounting flange with an outer surface of at least a proximal portion of a display stem.
17. The method of claim 16, comprising positioning a mating surface of the retaining puck in contact with a mating surface of the display stem.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A bipolar transistor, comprising:
an emitter;
a base connected to the emitter, the base having a first carbon content; and
a collector connected to the base, the collector including a second carbon content to prevent a conduction band barrier at a base-collector junction, wherein the second carbon content is greater than the first carbon content.
2. The bipolar transistor of claim 1, wherein an amount of the second carbon content in the collector is to cause a staggered offset in a conduction band at the base-collector junction at high current operation.
3. The bipolar transistor of claim 1, wherein an amount of the second carbon content in the collector is between about 0.5% to about 2%.
4. The bipolar transistor of claim 1, wherein the collector includes a carbon concentration between about 2.5\xd71020 cm\u22123 to about 1\xd71021 cm\u22123.
5. The bipolar transistor of claim 1, wherein the base has a steeply graded germanium profile with a high peak and the collector is substantially free from germanium.
6. The bipolar transistor of claim 1, wherein the base has a thickness sufficient to optimize maximum oscillation frequency (fmax).
7. The bipolar transistor of claim 1, wherein the base has a thickness between about 150 \u212b to about 600 \u212b.
8. The bipolar transistor of claim 1, wherein the emitter includes an n-type polysilicon, the base includes a p-type epitaxial silicon-germanium, and the collector includes an n-type epitaxial silicon.
9. A bipolar transistor, comprising:
an emitter;
a base connected to the emitter, the base having a first carbon content; and
a collector connected to the base, the collector including a second carbon content to prevent a conduction band barrier at a base-collector junction, wherein the second carbon content is greater than the first carbon content to prevent out-diffusion of a p-type material in the base and having a step-up increase at the base-collector junction.
10. The bipolar transistor of claim 1, wherein the base is between about 0% to about 0.4% carbon content.
11. A silicon germanium heterojunction bipolar transistor (SiGe HBT), comprising:
an n-type silicon emitter;
a p-type silicon germanium base connected to the emitter; and
an n-type silicon collector connected to the base, the collector including between about 0.5% to about 2% carbon content to cause a staggered offset in a conduction band and prevent a conduction band barrier at a base-collector heterojunction at high current operation, wherein the carbon content of the n-type silicon collector is greater than a carbon content of the p-type silicon germanium base.
12. The SiGe HBT of claim 11, wherein the base has a steeply graded germanium profile with a high peak, and the collector is substantially free from germanium.
13. The SiGe HBT of claim 11, wherein the base has a thickness sufficient to optimize maximum oscillation frequency (fmax).
14. The SiGe HBT of claim 11, wherein the emitter includes an n-type polysilicon, the base includes a p-type epitaxial silicon-germanium, and the collector includes an n-type epitaxial silicon.
15. The SiGe HBT of claim 11, wherein the base is between about 0% to about 0.4% carbon content to prevent out-diffusion of a p-type material in the base.
16. An integrated circuit, comprising:
a silicon substrate; and
a bipolar transistor overlying the substrate, the bipolar transistor including a collector and a base connected at a base-collector junction, the collector including carbon to prevent a conduction band barrier at a base-collector junction, wherein a carbon content of the collector is greater than a carbon content of the base.
17. The integrated circuit of claim 16, wherein the carbon content in the collector is to cause a staggered offset in a conduction band at the base-collector junction at high current operation.
18. The integrated circuit of claim 16, wherein the carbon content in the collector is between about 0.5% to about 2%.
19. The integrated circuit of claim 16, wherein the collector includes a carbon concentration between about 2.5\xd71020 cm\u22123 to about 1\xd71021 cm\u22123.
20. The integrated circuit of claim 16, wherein the base has a steeply graded germanium profile with a high peak, and the collector is substantially free from germanium.
21. The integrated circuit of claim 16, wherein the base has a thickness sufficient to optimize maximum oscillation frequency (fmax) for a given cutoff frequency (fT).
22. The integrated circuit of claim 16, wherein the emitter includes an n-type polysilicon, the base includes a p-type epitaxial silicon-germanium, and the collector includes an n-type epitaxial silicon.
23. An integrated circuit, comprising:
a silicon substrate; and
a bipolar transistor overlying the substrate, the bipolar transistor including a collector and a base connected at a base-collector junction, the collector including carbon to prevent a conduction band barrier at a base-collector junction, wherein a carbon content of the collector is greater than a carbon content of the base to prevent out-diffusion of a p-type material in the base and having a step-up increase at the base-collector heterojunction.
24. The integrated circuit of claim 16, wherein the base is between about 0% to about 0.4% carbon content.
25. The integrated circuit of claim 16, further comprising any one of an nMOS or a pMOS transistor formed into the substrate.