1. Locking pliers, comprising:
a first handle and a second handle;
a pair of interconnected jaws slidably coupled to the handles, wherein the pair of jaws are configured to slide between a retracted position within the handles and an extended position extending from the handles, wherein the pair of jaws comprise a first jaw and a second jaw, wherein the first jaw is coupled to the first handle via a first sliding mechanism that permits the first jaw to slide, but not pivot, relative to the first handle, and the second jaw is coupled to the second handle via a second sliding mechanism that is pivotally coupled to the second jaw, wherein the second sliding mechanism comprises a link pivotally coupled to the second jaw and a pair of pawls slidably and pivotally coupled to the second handle; and
wherein when the jaws are in the extended position, the jaws have an unclamped configuration in which the jaws are adjustable by a user to permit the jaws to lock onto objects of various sizes and a clamped configuration in which the jaws are releasably locked onto an object.
2. The locking pliers of claim 1, further comprising a lock configured to lock the jaws in the extended position until manually released by a user.
3. The locking pliers of claim 1, further comprising an adjustment mechanism located between the handles to permit the adjustment of the jaws with a single hand when the jaws are in the extended and unclamped configuration.
4. The locking pliers of claim 1, further comprising an ancillary tool pivotally coupled to one of the handles and configured to pivot between a stored position within the handle and a deployed position extending from the handle.
5. The locking pliers of claim 4, further comprising a lock configured to lock the ancillary tool into the deployed position.
6. The locking pliers of claim 1, wherein the pawls are each pivotally coupled to the link whereby the link pivots with respect to the second handle as the pair of jaws are opened and closed.
7. The locking pliers of claim 1, further comprising an adjustment linkage connected between the first sliding mechanism and the second sliding mechanism, the adjustment linkage comprising an adjustment wheel.
8. A multi-function tool, comprising:
a first handle;
a second handle;
an ancillary tool pivotally coupled to a first end of the first handle;
a first jaw having a tang coupled to the first handle via a first sliding mechanism;
a second jaw pivotally coupled to the first jaw and having a tang coupled to the second handle via a second sliding mechanism; and
an adjustment linkage connected between the first sliding mechanism and the second sliding mechanism;
wherein the jaws are configured to slide between a retracted position within the handles and an extended position extending from the handles; and
wherein when the jaws are in the extended position, the jaws have an unclamped configuration in which the jaws are adjustable by a user to permit the jaws to lock onto objects of various sizes and a clamped configuration in which the jaws are releasably locked onto an object.
9. The multi-function tool of claim 8, further comprising a lock configured to lock the jaws in the extended position relative to the handles until manually released by a user.
10. The multi-function tool of claim 8, further comprising an adjustment mechanism located between the handles to permit the adjustment of the jaws with a single hand when the jaws are in the extended and unclamped configuration.
11. The multi-function tool of claim 8, wherein the ancillary tool pivots between a stored position within the handle and a deployed position extending from the handle.
12. The multi-function tool of claim 11, further comprising a lock configured to lock the ancillary tool into the deployed position.
13. The multi-function tool of claim 8, wherein the adjustment linkage comprises an adjustment wheel.
14. A multi-function tool, comprising:
a pair of handles, each having a first end and a second end;
a pair of jaws slidably coupled to the handles via a pair of sliding mechanisms, wherein the jaws have an unclamped configuration in which the jaws are adjustable by a user to permit the jaws to lock onto objects of various sizes and a clamped configuration in which the jaws are releasably locked onto an object; and
an adjustment mechanism connected between the pair of sliding mechanisms and located between the handles and between the first end and the second end to permit the adjustment of the clamped configuration distance between the jaws.
15. The multi-function tool of claim 14, wherein the pair of jaws are slidably coupled to the handles and configured to slide between a retracted position within the handles and an extended position extending from the handles.
16. The multi-function tool of claim 14, further comprising a plurality of ancillary tools pivotally coupled to the handles.
17. The multi-function tool of claim 14, further comprising a lock configured to lock at least one of the ancillary tools into an open position.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a semiconductor substrate of a first general conductivity type;
an epitaxial layer of a second general conductivity type formed on the semiconductor substrate;
a buried layer of the second general conductivity type formed in a boundary region between the semiconductor substrate and the epitaxial layer;
an element isolation layer of the first general conductivity type formed in the epitaxial layer;
a body layer of the first general conductivity type formed in a surface portion of the epitaxial layer;
a source layer of the second general conductivity type formed in a surface portion of the body layer;
a drift layer of the second general conductivity type formed in a surface portion of the epitaxial layer surrounded by the element isolation layer and comprising a first region and a second region adjoining the first region and extending deeper into the epitaxial layer than the first region, the first region being disposed between the body layer and the second region, the first region comprising a first high impurity concentration region having an impurity concentration higher than the rest of the first region, the second region comprising a second high impurity concentration region having an impurity concentration higher than the rest of the second region, the second high impurity concentration region being deeper than the first high impurity concentration region;
a drain layer of the second general conductivity type disposed in a surface portion of the second region;
a drain isolation layer of the first general conductivity type formed in the epitaxial layer so as to be in contact with the body layer and to surround the drift layer;
a gate insulation film disposed on the epitaxial layer; and
a gate electrode disposed on the gate insulation film.
2. The semiconductor device of claim 1, wherein the drain layer is disposed away from the first region.
3. The semiconductor device of claim 1, wherein the gate insulation film comprises a thin gate insulation film and a thick gate insulation film adjoining the thin gate insulation film, and an end portion of the body layer overlaps the thin gate insulation film and an end portion of the first region overlaps the thick gate insulation film.
4. The semiconductor device of claim 3, wherein the drain layer is disposed away from the first region.
5. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate of a first general conductivity type;
forming an epitaxial layer of a second general conductivity type on the semiconductor substrate;
forming an element isolation layer of the first general conductivity type formed in the epitaxial layer;
forming a drain isolation layer of the first general conductivity type in the epitaxial layer surrounded by the element isolation layer;
forming a thick gate insulation film and a thin gate insulation film on the epitaxial layer in a region of the epitaxial layer surrounded by the drain isolation layer so that the thick and thin gate insulation films are in contact with each other;
forming a gate electrode so as to cover the thick gate insulation film and the thin gate insulation film;
forming a first resist layer on the semiconductor substrate so as to have an opening to expose the thin gate insulation film;
ion-implanting impurities of the first general conductivity type into a surface portion of the epitaxial layer using the first resist layer as a mask so as to form a body layer of the first general conductivity type extending under the thin gate insulation film and under the gate electrode;
forming a second resist layer on the semiconductor substrate so as to have an opening to expose the thick gate insulation film;
ion-implanting impurities of the second general conductivity type into a surface portion of the epitaxial layer using the second resist layer as a mask so as to form a drift layer of the second general conductivity type, the drift layer comprising a first region and a second region adjoining the first region and extending deeper into the epitaxial layer than the first region, the first region being disposed between the body layer and the second region, the first region comprising a first high impurity concentration region having an impurity concentration higher than the rest of the first region, the second region comprising a second high impurity concentration region having an impurity concentration higher than the rest of the second region, the second high impurity concentration region being deeper than the first high impurity concentration region;
forming a source layer of the second general conductivity type in a surface portion of the body layer; and
forming a drain layer of the second general conductivity type in a surface portion of the second region of the drift layer.