1. A method for discovering Internet Protocol (IP) addresses, comprising:
determining whether an intermediary Network Address Translator (NAT) resides between a local NAT and a public Internet network;
enabling a local address return service when no intermediary NAT resides between the local NAT and a public Internet network; and
disabling the local address return service and using a remote address return service when the intermediary NAT resides between the local NAT and a public Internet network.
2. The method according to claim 1 including:
sending a packet through the local NAT to the remote address return service;
enabling the local address return service when a returned IP address from the remote address return service matches an IP address assigned to the local NAT; and
disabling the local address return service and using the remote address return service when the returned IP address does not match the IP address assigned to the local NAT.
3. The method according to claim 1 including using Simple Traversal of User Datagram Protocol (UDP) Through Network Address Translators (NATS) (STUN) servers for both the local address return service and the remote address return service.
4. The method according to claim 3 including operating a STUN client in the local NAT to determine whether the intermediary NAT resides between the local NAT and the public Internet network.
5. The method according to claim 4 including using the local STUN server to listen for address return requests over an internal private interface in the local NAT and not listening for address return requests over a public interface in the local NAT.
6. The method according to claim 1 including:
using the local address return service to identify an IP address and port number for the local NAT when the local address return service is enabled; and
using the remote address return service to identify an IP address and port number for the intermediary NAT when the local address return service is disabled.
7. The method according to claim 1 including:
trying to contact one or more public address return services;
enabling the local address return service when none of the public address return services are available;
trying periodically to re-contact the one or more public address return services; and
disabling the local address return service and using one of the public address return services when one of the public address return services is contacted and the intermediary NAT resides between the local NAT and the public Internet network.
8. A network processing device, comprising:
a processor operating a client that determines whether the network processing device operates within a public network or operates within a private network, the processor enabling or disabling a local address discovery service depending upon whether the network processing device operates within the public network or within the private network, wherein the processor enables the local address discovery service when a remote address discovery service cannot be contacted and conducts address discovery operations for endpoints on the private network until the remote address discovery service becomes available.
9. The network processing device according to claim 8 wherein the processor operates a Network Address Translator (NAT) that receives Internet Protocol (IP) packets from endpoints, reformats the IP packets with an IP address and User Datagram Protocol (UDP) port number associated with the NAT, and sends the reformatted packets to the local address discovery service when the NAT operates within the public network.
10. A network processing device according to claim 9 wherein the STUN service, the STUN client, and the NAT all reside within the network processing device.
11. The network processing device according to claim 8 including an internal interface for connecting to the private network and a public interface for connecting directly or indirectly to the public network.
12. The network processing device according to claim 11 wherein the local address discovery service only listens for address discovery requests through the internal interface.
13. The network processing device according to claim 8 wherein the local address discovery service is a Simple Traversal of User Datagram Protocol (UDP) Through Network Address Translators (NATS) (STUN) service and the client operating in the network processing device is a STUN client.
14. A network device, comprising:
memory storing a list of address locations for address discovery devices used for identifying addresses for Network Address Translators (NATs); and
a processor using a remote address discovery device to discover the address for an intermediate NAT when the intermediate NAT resides between a local NAT and a public network and using a local address discovery device to discover the address for the local NAT when no intermediate NAT resides between the local NAT and the public network.
15. The network device according to claim 14 wherein the processor first attempts to access the local address discovery device and then uses the remote address discovery device when the local address discovery device is disabled.
16. The network device according to claim 14 wherein the processor conducts Internet Protocol (IP) phone calls over a local private network using the local NAT address identified by the local address discovery device when no remote address discovery devices can be contacted.
17. The network device according to claim 16 wherein the local and remote address discovery device are Simple Traversal of User Datagram Protocol (UDP) Through Network Address Translators (NATS) (STUN) servers.
18. The network device according to claim 14 wherein the processor sends a packet out to a selected one of the local or remote address discovery devices and receives back a reply packet that identifies a public address and port number associated with the local NAT or intermediate NAT that connects the network device to the public network.
19. A method for discovering an Internet Protocol (IP) address, comprising:
sending an inquiry through a local Network Address Translator (NAT) first to a local address return server to identify a public address for the local NAT; and
alternatively sending the inquiry through a remote NAT to a remote address return server to identify a public address for the remote NAT when the remote NAT is located between the local NAT and a public network.
20. The method according to claim 19 including sending the inquiry to the remote address return server whenever the local address return server is disabled.
21. The method according to claim 19 including:
attempting to contact one or more remote address return servers operating on the public network;
sending an inquiry to the local address return server for the IP address of the local NAT when none of the remote address return servers can be contacted; and
using the IP address of the local NAT to conduct IP communications over a private network when the remote address servers cannot be contacted.
22. The method according to claim 19 including using Simple Traversal of User Datagram Protocol (UDP) Through Network Address Translators (NATS) (STUN) servers for the local and remote address return servers.
23. A system for discovering an Internet Protocol (IP) address, comprising:
means for sending an inquiry through a local Network Address Translator (NAT) first to a local address return server to identify a public address for the local NAT; and
means for alternatively sending the inquiry through a remote NAT to a remote address return server to identify a public address for the remote NAT when the remote NAT is located between the local NAT and a public network.
24. The system according to claim 23 including means for sending the inquiry to the remote address return server whenever the local address return server is disabled.
25. The system according to claim 23 including:
means for attempting to contact one or more remote address return servers operating on the public network;
means for sending an inquiry to the local address return server for the IP address of the local NAT when none of the remote address return servers can be contacted; and
means for using the IP address of the local NAT to conduct IP communications over a private network when the remote address servers cannot be contacted.
26. The system according to claim 23 including means for using Simple Traversal of User Datagram Protocol (UDP) Through Network Address Translators (NATS) (STUN) servers for the local and remote address return servers.
27. An article of machine-readable media containing instructions for discovering an Internet Protocol (IP) address, the instructions when executed:
sending an inquiry through a local Network Address Translator (NAT) first to a local address return server to identify a public address for the local NAT; and
alternatively sending the inquiry through a remote NAT to a remote address return server to identify a public address for the remote NAT when the remote NAT is located between the local NAT and a public network.
28. The article of machine-readable media according to claim 27 including instructions when executed sending the inquiry to the remote address return server whenever the local address return server is disabled.
29. The article of machine-readable media according to claim 28 including instructions when executed:
attempting to contact one or more remote address return servers operating on the public network;
sending an inquiry to the local address return server for the IP address of the local NAT when none of the remote address return servers can be contacted; and
using the IP address of the local NAT to conduct IP communications over a private network when the remote address servers cannot be contacted.
30. The article of machine-readable media according to claim 27 including instructions when executed using Simple Traversal of User Datagram Protocol (UDP) Through Network Address Translators (NATS) (STUN) servers for the local and remote address return servers.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor device comprising the steps of:
irradiating with an ion beam a single crystal semiconductor substrate provided with an insulating film to form a damaged region in the single crystal semiconductor substrate,
floating liquid glass over a liquid denser than the liquid glass to shape the liquid glass into a plate,
disposing the single crystal semiconductor substrate provided with the damaged region over the plate-like liquid glass so that the insulating film and the liquid glass face each other,
cooling the plate-like liquid glass and the single crystal semiconductor substrate slowly, whereby a glass substrate is obtained from the plate-like liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together, and
separating a single crystal semiconductor layer from the single crystal semiconductor substrate along the damaged region.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor substrate is one of a single crystal silicon substrate, a single crystal germanium substrate, a single crystal silicon germanium substrate, a compound semiconductor substrate of gallium arsenide, and a compound semiconductor substrate of indium phosphide.
3. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film includes one of or two or more of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, a germanium oxide film, a germanium nitride film, a germanium oxynitride film, a germanium nitride oxide film, an aluminum oxide film, a tantalum oxide film, a hafnium oxide film, an aluminum nitride film, an aluminum oxynitride film, and an aluminum nitride oxide film.
4. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film is an oxide film formed by oxidation of a surface of the single crystal semiconductor substrate in gas including chlorine.
5. The method for manufacturing a semiconductor device according to claim 1, wherein the ion beam is a beam including a hydrogen ion.
6. A method for manufacturing a semiconductor device comprising the steps of:
irradiating with an ion beam a single crystal semiconductor substrate provided with an insulating film to form a damaged region in the single crystal semiconductor substrate,
floating liquid glass over a liquid denser than the liquid glass to shape the liquid glass into a plate,
disposing the single crystal semiconductor substrate provided with the damaged region over the plate-like liquid glass so that the insulating film and the liquid glass face each other,
cooling the plate-like liquid glass and the single crystal semiconductor substrate slowly, whereby a glass substrate is obtained from the plate-like liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together,
separating a single crystal semiconductor layer from the single crystal semiconductor substrate along the damaged region, and
taking a foreign matter between the glass substrate and the single crystal semiconductor layer into the glass substrate.
7. The method for manufacturing a semiconductor device according to claim 6, wherein the single crystal semiconductor substrate is one of a single crystal silicon substrate, a single crystal germanium substrate, a single crystal silicon germanium substrate, a compound semiconductor substrate of gallium arsenide, and a compound semiconductor substrate of indium phosphide.
8. The method for manufacturing a semiconductor device according to claim 6, wherein the insulating film includes one of or two or more of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, a germanium oxide film, a germanium nitride film, a germanium oxynitride film, a germanium nitride oxide film, an aluminum oxide film, a tantalum oxide film, a hafnium oxide film, an aluminum nitride film, an aluminum oxynitride film, and an aluminum nitride oxide film.
9. The method for manufacturing a semiconductor device according to claim 6, wherein the insulating film is an oxide film formed by oxidation of a surface of the single crystal semiconductor substrate in gas including chlorine.
10. The method for manufacturing a semiconductor device according to claim 6, wherein the ion beam is a beam-including a hydrogen ion.
11. A method for manufacturing a semiconductor device comprising the steps of:
irradiating with an ion beam a single crystal semiconductor substrate provided with an insulating film to form a damaged region in the single crystal semiconductor substrate,
floating liquid glass over a liquid denser than the liquid glass to shape the liquid glass into a plate,
disposing over the plate-like liquid glass the single crystal semiconductor substrate provided with the damaged region so that the insulating film and the liquid glass face each other,
sticking a substrate support portion onto a side of the single crystal semiconductor substrate which is opposite to a side where the insulating film is formed,
cooling the plate-like liquid glass and the single crystal semiconductor substrate slowly, whereby a glass substrate is obtained from the plate-like liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together, and
separating a single crystal semiconductor layer from the single crystal semiconductor substrate onto which the substrate support portion is stuck, along the damaged region.
12. The method for manufacturing a semiconductor device according to claim 11, wherein the single crystal semiconductor substrate is one of a single crystal silicon substrate, a single crystal germanium substrate, a single crystal silicon germanium substrate, a compound semiconductor substrate of gallium arsenide, and a compound semiconductor substrate of indium phosphide.
13. The method for manufacturing a semiconductor device according to claim 11, wherein the insulating film includes one of or two or more of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, a germanium oxide film, a germanium nitride film, a germanium oxynitride film, a germanium nitride oxide film, an aluminum oxide film, a tantalum oxide film, a hafnium oxide film, an aluminum nitride film, an aluminum oxynitride film, and an aluminum nitride oxide film.
14. The method for manufacturing a semiconductor device according to claim 11, wherein the insulating film is an oxide film formed by oxidation of a surface of the single crystal semiconductor substrate in gas including chlorine.
15. The method for manufacturing a semiconductor device according to claim 11, wherein the ion beam is a beam including a hydrogen ion.
16. A method for manufacturing a semiconductor device comprising the steps of:
forming a porous single crystal semiconductor layer over a single crystal semiconductor substrate,
forming a dense single crystal semiconductor layer over the porous single crystal semiconductor layer,
floating liquid glass over a liquid denser than the liquid glass to shape the liquid glass into a plate,
disposing the single crystal semiconductor substrate provided with the porous single crystal semiconductor layer and the dense single crystal semiconductor layer over the plate-like liquid glass so that the single crystal semiconductor substrate and the liquid glass face each other,
cooling the plate-like liquid glass and the single crystal semiconductor substrate slowly, whereby a glass substrate is obtained from the plate-like liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together, and
separating the dense single crystal semiconductor layer from the single crystal semiconductor substrate along the porous single crystal semiconductor layer.
17. The method for manufacturing a semiconductor device according to claim 16, wherein the porous single crystal semiconductor layer is formed by anodic oxidation of the single crystal semiconductor substrate.
18. The method for manufacturing a semiconductor device according to claim 16, wherein the single crystal semiconductor substrate is one of a single crystal silicon substrate, a single crystal germanium substrate, a single crystal silicon germanium substrate, a compound semiconductor substrate of gallium arsenide, and a compound semiconductor substrate of indium phosphide.
19. A method for manufacturing a semiconductor device comprising the steps of:
irradiating with an ion beam a single crystal semiconductor substrate provided with an insulating film to form a damaged region in the single crystal semiconductor substrate,
disposing solid glass over a solid of a liquid material denser than liquid glass,
disposing over the solid glass the single crystal semiconductor substrate provided with the damaged region so that the insulating film and the solid glass face each other,
heating the solid glass and the solid of a liquid material denser than liquid glass, so that the solid glass is turned into the liquid glass and the solid of a liquid material denser than the liquid glass is turned into the liquid material,
cooling the liquid glass and the single crystal semiconductor substrate slowly, whereby a glass substrate is obtained from the liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together, and
separating a single crystal semiconductor layer from the single crystal semiconductor substrate along the damaged region.
20. The method for manufacturing a semiconductor device according to claim 18, wherein the single crystal semiconductor substrate is one of a single crystal silicon substrate, a single crystal germanium substrate, a single crystal silicon germanium substrate, a compound semiconductor substrate of gallium arsenide, and a compound semiconductor substrate of indium phosphide.