1. An internet billing system which is to bill service charge resulting from the use of contents in a contents provider’s website by an internet user, and comprises a billing center, a wired and wireless contents provider, a billing gateway for an interface of the billing center and a financial agency;
wherein the contents provider comprises
a web server for an internet user to use contents by connecting to a contents provider through the internet, and
a billing client providing a service according to a request of a client and transmitting diverse information on billing to a billing server after completing a user authorization and a balance identification by the request of a user through a connection to a billing center,
the billing center comprises
a web server to connect to the above billing center for an internet user or a wired or wireless contents provider,
a billing server which handles the request of a billing client (330) which transmits menu information. authorizes a user, examines balance. creates billing log to serve in the contents provider’s site,
a DB server which manages a user DB storing information on users, a contents log statement DB recording a client’s log statement on contents, a balance DB storing balance of users, a contents provider’s DB storing information on a contents provider and a billing log DB storing history on billing. and
a billing treatment client which performs paying expenses resulting from use of contents by a user in connection to a financial agency through the aforementioned billing gateway.
2. An Internet billing system according to the claim 1,
wherein the aforementioned billing center contains an additional time server to measure time, and the time server measures the internet user’s served time on the contents assigned to a time meter rate plan and notifies the service time to a billing server.
3. An internet billing plan which is to bill service charges resulting from the use of contents in a contents provider’s website by an internet user by employing a billing system which comprise a billing center, a contents provider connected to the billing center, a billing gateway for an interface of the billing center and a financial agency,
which is characterized by
an internet user registration step in which an internet user registers in the above billing center,
a contents provider registration step in which the above contents provider registers in the above billing center and installs a billing client program,
a contents use request step in which the above internet user requests the use of contents provided by the above contents provider,
a contents offering step in which the above billing client program requests contents asked by the above internet user to the above billing server of the billing center followed by the offering of the contents authorized by the above billing server to the internet users, and
a billing step in which the above billing client bills users according to an itemized served contents statement.
4. An internet billing plan according to the claim 1,
wherein the above contents provider registration step comprises
a step in which the above contents provider register while providing information about itself,
a step in which the above billing center stores contents provider’s information to a database endows with a code and the client program endowed with a code is provided to the contents provider.
a step in which the above contents provider installs the above client program, and
a menu registration step in which the above contents provider registers a directory or a service file classified by a billing plan to the billing center.
5. An internet billing plan according to the claim 1,
wherein in a packet meter rate plan the contents is provided to an internet user if the price assigned to the size of contents requested by an internet user is less than the user’s balance.
6. An internet billing plan according to the claim 1,
wherein in a session meter rate plan the contents is provided to an internet user if the price assigned to a session is less than the user’s balance in case of a newly begin session.
7. An internet billing plan according to the claim 1,
wherein in a time meter rate plan the contents is provided to an internet user if the price assigned to a predetermined interval since the beginning of a specific menu by the internet user is less than the user’s balance.
8. An Internet billing plan according to any claim from the claim 3 to claim 7,
which additionally comprises a step in which the above internet user purchase a contents exchange ticket by connecting to the above billing center,
a step in which the above billing center renews the user’s balance database according to the contents exchange ticket amount purchased by the above internet user and
a step in which the amount resulting from the use contents by the internet user is subtracted from the balance of the balance database.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A ferroelectric capacitor, comprising:
a first electrode comprising an alloy of Ir and Ru;
a ferroelectric layer disposed on the first electrode; and
a second electrode disposed on the ferroelectric layer.
2. The ferroelectric capacitor of claim 1, wherein the alloy is a multi-phase alloy, a first phase and a second phase of the multi-phase alloy each containing Ir and Ru.
3. The ferroelectric capacitor of claim 1, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 30 to 70 atomic percent.
4. The ferroelectric capacitor of claim 1, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 35 to 55 atomic percent.
5. The ferroelectric capacitor of claim 1, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 35 to 45 atomic percent.
6. The ferroelectric capacitor of claim 1, wherein the alloy has an average composition of about Ru40Ir60.
7. The ferroelectric capacitor of claim 1, wherein the ferroelectric layer comprises one of lead-zirconate-titanate, strontium-bismuth-tantalate, bismuth-lanthanum-titanate and barium-strontium-titanate.
8. A ferroelectric memory, comprising:
a substrate; and
a plurality of memory cells arranged on the substrate, each memory cell comprising
a first electrode comprising an alloy of Ir and Ru,
a ferroelectric layer disposed on the first electrode, and
a second electrode disposed on the ferroelectric layer.
9. The ferroelectric memory of claim 8, wherein the alloy is a multi-phase alloy, a first phase and a second phase of the multi-phase alloy each containing Ir and Ru.
10. The ferroelectric memory of claim 8, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 30 to 70 atomic percent.
11. The ferroelectric memory of claim 8, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 35 to 55 atomic percent.
12. The ferroelectric memory of claim 8, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 35 to 45 atomic percent.
13. The ferroelectric memory of claim 8, wherein the alloy has an average composition of about Ru40Ir60.
14. The ferroelectric memory of claim 8, wherein the ferroelectric layer comprises one of lead-zirconate-titanate, strontium-bismuth-tantalate, bismuth-lanthanum-titanate and barium-strontium-titanate.
15. The ferroelectric memory of claim 8, further comprising a barrier layer disposed at a surface of the second electrode, the second electrode being arranged between the barrier layer and the ferroelectric layer.
16. A method of fabricating a ferroelectric capacitor, comprising:
forming a first electrode comprising an alloy of Ir and Ru;
forming a ferroelectric layer on the first electrode; and
forming a second electrode on the ferroelectric layer.
17. The method of claim 16, wherein the alloy is a multi-phase alloy, a first phase and a second phase of the multi-phase alloy each containing Ir and Ru.
18. The method of claim 16, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 30 to 70 atomic percent.
19. The method of claim 16, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 35 to 55 atomic percent.
20. The method of claim 16, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 35 to 45 atomic percent.
21. The method of claim 16, wherein the alloy has an average composition of about Ru40Ir60.
22. The method of claim 16, wherein the ferroelectric layer comprises one of lead-zirconate-titanate, strontium-bismuth-tantalate, bismuth-lanthanum-titanate and barium-strontium-titanate.
23. The method claim 16, wherein forming the first electrode comprises depositing the first electrode by one of sputtering, chemical vapor deposition and atomic layer deposition.
24. A method of fabricating a ferroelectric memory, comprising:
forming a plurality of memory cells on a substrate, wherein each memory cell includes
a first electrode comprising an alloy of Ir and Ru,
a ferroelectric layer disposed on the first electrode, and
a second electrode disposed on the ferroelectric layer.
25. The method of claim 24, wherein the alloy is a multi-phase alloy, a first phase and a second phase of the multi-phase alloy each containing Ir and Ru.
26. The method of claim 24, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 30 to 70 atomic percent.
27. The method of claim 24, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 35 to 55 atomic percent.
28. The method of claim 24, wherein the alloy has an average composition of RuxIr1\u2212x, x being in the range of 35 to 45 atomic percent.
29. The method of claim 24, wherein the alloy has an average composition of about Ru40Ir60.
30. The method of claim 24, wherein the ferroelectric layer comprises one of lead-zirconate-titanate, strontium-bismuth-tantalate, bismuth-lanthanum-titanate and barium-strontium-titanate.
31. The method of claim 24, comprising depositing the first electrode by one of sputtering, chemical vapor deposition and atomic layer deposition.
32. The method of claim 24, wherein forming the first electrode comprises depositing the first electrode by one of sputtering, chemical vapor deposition and atomic layer deposition.
33. The method of claim 24, comprising forming a barrier layer at a surface of the second electrode, the second electrode being arranged between the barrier layer and the ferroelectric layer.