1. A method for forming a capacitor comprising:
compressing tantalum powder into a tantalum anode wherein said tantalum anode comprises no more than 0.15 ppmuCg oxygen and no more than 50 ppm carbon;
anodizing said tantalum anode to form dielectric;
dipping said anodized anode into a slurry of conductive polymer;
drying said conductive polymer; and
providing a first external termination in electrical contact with said tantalum anode and a second external termination in electrical contact with said conductive polymer.
2. The method for forming a capacitor of claim 1 wherein said tantalum anode comprises no more than 0.1 ppmuCg oxygen.
3. The method for forming a capacitor of claim 1 wherein said tantalum anode comprises no more than 10 ppm carbon.
4. The method for forming a capacitor of claim 1 wherein said conductive polymer is selected from polyaniline, polypyrrole, polythiophene, and derivatives thereof.
5. The method for forming a capacitor of claim 4 wherein said conductive polymer is polyethyldioxythiophene.
6. The method for forming a capacitor of claim 1 wherein said slurry comprises polymeric particles with molecular weights of about 500 to about 10,000,000.
7. The method for forming a capacitor of claim 1 wherein said capacitor has a breakdown voltage of at least 60V.
8. The method for forming a capacitor of claim 7 wherein said capacitor has a breakdown voltage of at least 70V.
9. The method for forming a capacitor of claim 8 wherein said capacitor has a breakdown voltage of at least 100V.
10. The method for forming a capacitor of claim 9 wherein said capacitor has a breakdown voltage of at least 150V.
11. The method for forming a capacitor of claim 10 wherein said capacitor has a breakdown voltage of at least 200V.
12. The method for forming a capacitor of claim 1 wherein said capacitor has a ESR of no more than 150 mohms.
13. The method for forming a capacitor of claim 1 further comprising providing an anode wire in electrical contact with said anode.
14. The method for forming a capacitor of claim 13 wherein said anode wire is attached to said tantalum anode by welding in an inert atmosphere.
15. The method for forming a capacitor of claim 14 wherein said anode wire is tantalum.
16. The method for forming a capacitor of claim 1 further comprising applying a carbon layer between said conductive polymer and said second external termination.
17. The method for forming a capacitor of claim 1 further comprising applying a metallic coating between said carbon layer and said second external termination.
18. The method for forming a capacitor of claim 17 where the metallic coating comprises silver flake in an organic binder.
19. The method for forming a capacitor of claim 1 further comprising forming said dielectric to at least 100 V.
20. The method for forming a capacitor of claim 1 wherein said tantalum powder has a charge of no more than 30,000 CVg.
21. The method for forming a capacitor of claim 1 further comprising at least partially encapsulating said capacitor in an organic molding.
22. The method for forming a capacitor of claim 1 further comprising hermetically sealing said capacitor in a metallic can.
23. The method for forming a capacitor of claim 22 wherein said second external termination is attached to said can.
24. The method for forming a capacitor of claim 1 wherein said dielectric is Ta2O5.
25. The method for forming a capacitor of claim 1 wherein said anode is sintered prior to said anodizing.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A positive photoresist composition which comprises (A) a resin having a group which decomposes by the action of an acid to increase solubility in an alkaline developing solution, and (B) a compound which generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom upon irradiation with an actinic ray or radiation.
2. The positive photoresist composition as claimed in claim 1, wherein the composition further comprises (D) a compound having a molecular weight of not more than 3,000 which decomposes by the action of an acid to increase solubility in an alkaline developing solution.
3. A positive photoresist composition which comprises (B) a compound which generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom upon irradiation with an actinic ray or radiation, (D) a compound having a molecular weight of not more than 3,000 which decomposes by the action of an acid to increase solubility in an alkaline developing solution, and (E) an alkali-soluble resin.
4. The positive photoresist composition as claimed in claim 1, wherein the composition further comprises (C) a compound which generates a sulfonic acid upon irradiation with an actinic ray or radiation.
5. The positive photoresist composition as claimed in claim 1, wherein the composition further comprises (F) a nitrogen-containing basic compound and (G) a fluorine-base or silicon-base surface active agent.
6. The positive photoresist composition as claimed in claim 1, wherein (B) the compound which generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom upon irradiation with an actinic ray or radiation is a compound represented by the following formula (I), (II) or (III):
21
wherein R1 to R37, which may be the same or different, each represents a hydrogen atom, a straight chain, branched chain or cyclic alkyl group, a straight chain, branched chain or cyclic alkoxy group, a hydroxy group, a halogen atom or an SR38 group (wherein R38 represents a straight chain, branched chain or cyclic alkyl group or an aryl group); and X represents an anion of an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom.
7. The positive photoresist composition as claimed in claim 6, wherein X represents an anion of a perfluoro aliphatic carboxylic acid or a perfluoro aromatic carboxylic acid.
8. The positive photoresist composition as claimed in claim 6, wherein X represents an anion of a perfluoro alkyl carboxylic acid having not less than 4 carbon atoms.
9. The positive photoresist composition as calimed in claim 1, wherein (A) the resin having a group which decomposes by the action of an acid to increase solubility in an alkaline developing solution is a resin containing a repeating unit represented by formula (IV) shown below and a repeating unit represented by formula (V) shown below.
22
wherein L represents a hydrogen atom, a straight-chain, branched chain or cyclic alkyl group which may be substituted or an aralkyl group which may be substituted; Z represents a straight-chain, branched chain or cyclic alkyl group which may be substituted or an aralkyl group which may be substituted; or Z and L may be combined with each other to form a 5-membered or 6-membered ring.
10. The positive photoresist composition as claimed in claim 9, wherein Z in formula (IV) represents a substituted alkyl group or a substituted aralkyl group.
11. The positive photoresist composition as claimed in claim 1, wherein the composition further comprises (B) a compound which generates a carboxylic acid which is not substituted with a fluorine atom upon irradiation with an actinic ray or radiation.
12. The positive photoresist composition as claimed in claim 1, wherein the aliphatic carboxylic acid substituted with a fluorine atom which is generated from the compound of component (B) is that represented by the following formula (VI):
L(CH2)p(CF2)q(CH2)rCOOH(VI)
wherein L represents a hydrogen atom or a fluorine atom; p and r, which may be the same or different, each represents an integer of from 0 to 15; and q represents an integer of from 1 to 15.
13. The positive photoresist composition as claimed in claim 1, wherein the composition further comprises a compound which generates an acid upon irradiation with an actinic ray or radiation other than the compound of component (B).
14. The positive photoresist composition as claimed in claim 13, wherein the compound which generates an acid upon irradiation with an actinic ray or radiation other than the compound of component (B) is that selected from diazonium salts, ammonium salts, phosphonium salts, iodonium salts, sulfonium salts, selenonium salts, arsonium salts, organic halide compounds, organic metalorganic halide compounds, photo-acid generators having an o-nitrobenzyl type protective group, compounds which photolyze to generate a sulfonic acid, disulfone compounds, diazoketosulfone compounds and diazodisulfone compounds.
15. The positive photoresist composition as claimed in claim 14, wherein the compound which generates an acid upon irradiation with an actinic ray or radiation other than the compound of component (B) is that represented by the following formula (PAG3), (PAG4), (PAG6) or (PAG7):
23
wherein Ar1 and Ar2, which may be the same or different, each represents a substituted or unsubstituted aryl group; R203, R204 and R205, which may be the same or different, each represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group, or two of R203, R204 and R205 or Ar1 and Ar2 may be combined through a single bond or a substituent; and Z represents a counter anion,
24
wherein R206 represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group; and A represents a substituted or unsubstituted alkylene group, a substituted or unsubstituted alkenylene group or a substituted or unsubstituted arylene group,
25
wherein R represents a straight-chain, branched chain or cyclic alkyl group or an aryl group which may be substituted.
16. The positive photoresist composition as claimed in claim 1, wherein the resin of component (B) has an acid-decomposable group in the polymer main chain or side chain, or both the polymer main chain and side chain.
17. The positive photoresist composition as claimed in claim 16, wherein the acid-decomposable group is a group represented by formula COOA0 or OB0 wherein A0 represents C(R01)(R02)(R03), Si(R01)(R02) (R03) or C(R04)(R05)O(R06); B0 represents A0 or COOA0; R01, R02, R03, R04 and R05, which may be the same or different, each represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group; and R06 represents an alkyl group or an aryl group, provided that at least two of R01 to R03 are not hydrogen atoms; or two of R01 to R03 are bonded to each other to form a ring or two of R04 to R06 are bonded to each other to form a ring.
18. The positive photoresist composition as claimed in claim 1, wherein the resin of component (B) is that whose 1 m-thick film has transmittance at 248 nm of from 20% to 90%.
19. The positive photoresist composition as claimed in claim 3, wherein the compound of component (D) is that containing at least two acid-decomposable groups in its structure wherein at least 8 connecting atoms other than acid-decomposable group are interposed between the acid-decomposable groups which are separated from each other at the greatest distance.
20. The positive photoresist composition as claimed in claim 1, wherein the composition further comprises a nitrogen-containing basic compound.
21. The positive photoresist composition as claimed in claim 20, wherein the nitrogen-containing basic compound is that represented by the following formula (A), (B), (C), (D) or (E):
26
wherein R250, R251 and R252, which may be the same or different, each represents a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, an aminoalkyl group having from 1 to 6 carbon atoms, a hydroxyalkyl group having from 1 to 6 carbon atoms or a substituted or unsubstituted aryl group having from 6 to 20 carbons atoms, or R251 and R252 may be combined with each other to form a ring;
27
wherein R253, R254, R255 and R256, which may be the same or different, each represents an alkyl group having from 1 to 6 carbon atoms.