1. A halide phosphor powder for a warm-white light emitting diode, the halide phosphor powder comprising:
a low-color-temperature phosphor powder of halide nitride based on garnet of rare earth oxides and having cerium as an activating agent, chloride (Cl\u22121) and nitrogen ion (N\u22123) are added to a composition of the phosphor powder and a stoichiometric relationship of the composition is (\u03a3Ln+3)3Al2(Al(O1-2pClpNp)43, wherein \u03a3Ln=at least one element selected from a group consisting of Y, Gd, Tb, Lu, Dy, Pr, and Ce, the chemical parameter in the stoichiometric relationship is 0.001\u2266p\u22660.2;
wherein, in a composition of a cation lattice, rare earth ions of the low-color-temperature phosphor powder are selected from a group consisting of 0.001\u2266(Y\u03a3Ln)\u22660.5, 0.5\u2266(Gd\u03a3Ln)\u22660.95, 0\u2266(Tb\u03a3Ln)\u22660.1, 0\u2266(Lu\u03a3Ln)\u22660.05, 0\u2266(Dy\u03a3Ln)\u22660.05, 0.0001\u2266(Pr\u03a3Ln)\u22660.01 and 0.01\u2266(Ce\u03a3Ln)\u22660.1.
2. The halide phosphor powder according to claim 1, wherein a principal lattice parameter a of the halide phosphor powder is a\u226712.01 and increases with the rise of the chemical index \u201cp\u201d in the formula.
3. The halide phosphor powder according to claim 1, wherein a maximal radiation wavelength (\u03bb) in the spectrum of the halide phosphor powder amounts to 580\xb13 nm and shifts to a longer wavelength with the rise of the chemical index \u201cp\u201d in the formula.
4. The halide phosphor powder according to claim 1, wherein a spectral half width is enlarged to \u03bb0.5=126+6 nm when the chemical index \u201cp\u201d in the halide phosphor powder matrix increases.
5. The halide phosphor powder according to claim 1, wherein a chromaticity coordinate is enlarged to \u03a3(x+y)>0.88 when the chemical index \u201cp\u201d in the halide phosphor powder matrix increases.
6. The halide phosphor powder according to claim 1, wherein a quantum output is accumulated from \u03b6=0.92 to \u03b6=0.96 when the chemical index \u201cp\u201d in the halide phosphor powder matrix increases.
7. The halide phosphor powder according to claim 1, wherein particles of the halide phosphor powder are located on a prismatic face of an InGaN-base semiconductor heterostructure and a median particle diameter of the phosphor powder is d50=4.0 \u03bcm or d90=16 \u03bcm.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A method for fabricating semiconductor components having an electrically conductive layer configured on a semiconductor substrate, which comprises:
applying a silicon mask layer to a conductive layer;
applying an etching mask to the conductive layer for patterning the silicon mask layer;
selectively etching the silicon mask layer using the etching mask; and
patterning the conductive layer in an etching process using the selectively etched mask layer as a hard mask.
2. The method according to claim 1, which comprises:
leaving the silicon mask layer on the conductive layer after the conductive layer has been patterned; and
using the silicon mask layer as an adhesion promoting layer between the conductive layer and a further layer that is deposited.
3. The method according to claim 1, which comprises adapting a thickness of the silicon mask layer to reduce reflections during photolithographic patterning of its etching mask.
4. The method according to claim 1, which comprises using the silicon layer as an etching stop for protecting the conductive layer.
5. The method according to claim 1, wherein the silicon layer is a layer selected from the group consisting of an amorphous layer and a polycrystalline layer.
6. The method according to claim 1, which comprises doping the silicon layer.
7. The method according to claim 1, which comprises using the silicon layer as a hard mask while selectively etching a layer sequence which includes the conductive layer and a dielectric.
8. The method according to claim 1, which comprises using a metal layer as the conductive layer.
9. The method according to claim 8, wherein the metal layer includes a metal selected from the group consisting of platinum, iridium, palladium, and ruthenium.
10. The method according to claim 1, wherein the conductive layer is a layer selected from the group consisting of iridium oxide and ruthenium oxide.
11. A semiconductor component comprising:
a semiconductor substrate;
a conductive layer configured on said semiconductor substrate;
a mask layer covering said conductive layer, said mask layer being a silicon layer; and
a further layer configured above said conductive layer and connected to said conductive layer with said mask layer interposed therebetween, said further layer having a contact hole therethrough for making contact with said conductive layer, said contact hole extending at least to said mask layer;
said conductive layer being a layer selected from the group consisting of platinum, iridium, palladium, ruthenium, an alloy of at least one of the abovementioned metals, iridium oxide, and ruthenium oxide.