1. A compound of formula (I)
wherein -A is
R6, which may be in position 5, 6, 7, or 8 of the phenyl ring of the naphthoquinone, represents a hydrogen atom, a halogen atom, a hydroxy group, a linear or branched (C1-C4)alkyl group, a di- or tri-fluoromethyl group, a trifluoromethoxy group, or a pentafluorosulfanyl group,
n is an integer between 0 and 4, and
R7 represents a methyl group;
X represents \u2014C(O)\u2014or \u2014CHY\u2014, with Y being a hydrogen atom, or a hydroxy group; and
R1, R2, R3, R4 and R5 each independently represent:
a hydrogen atom,
a halogen atom selected from the group consisting of Br, CI, and F,
a hydroxy group,
a methyl or t-butyl group,
a di- or trifluoromethyl group,
a methoxy group,
a trifluoromethoxy group,
\u2014NH2,
\u2014NO2,
\u2014CN,
\u2014CONH(CH2)2CN
-NHBoc,
the group
\u2003and
a phenyl group substituted in the para position by a t-butyl group, \u2014NO2, \u2014N(CH3)2, or \u2014NHC(CH3)3,
or a pharmaceutically acceptable salt of said compound,
with the proviso that said compound is not
2. The compound according to claim 1, wherein X represents \u2014C(O)\u2014 or \u2014CH2\u2014.
3. The compound according to claim 1, wherein R1, R2, R3, R4 and R5 are each independently selected from the group consisting of a hydrogen atom, a hydroxy group, a methoxy group, a di- or tri-fluoromethyl group, a trifluoromethoxy group, and an amino group.
4. The compound according to claim 1, wherein R1, R2, R3, R4 and R5 are each independently a di- or tri-fluoromethyl group, or a trifluoromethoxy group.
5. An anti-malaria drug, comprising the compound of claim 1.
6. A method for treating a subject for malaria, comprising administering to the subject an effective amount of the compound of claim 1.
7. A pharmaceutical composition, comprising as active ingredient one or more compounds of claim 1, in combination with excipients, pharmaceutically acceptable diluents or carriers.
8. The pharmaceutical composition according to claim 7, further comprising as active ingredients one or more additional antimalarial agents selected from the group consisting of atovaquone, chloroquine, amodiaquine, mefloquine, artemisinin, artesunate, arteether, artemether, menadione, methylene blue, proguanil, cycloguanil, chlorproguanil, pyrimethamine, primaquine, piperaquine, fosmidomycin, halofantrine, dapsone, trimethoprim, sulfamethoxazole, and sulfadoxine.
9. A method for treating malaria in a subject, comprising administering an effective amount of a pharmaceutical composition comprising the compound of claim 1, to a subject in need thereof.
10. A method for reducing the incidence of malaria infection in a subject, comprising administering to the subject an effective amount of the compound of claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A light-emitting device comprising:
a gate electrode over a substrate;
a gate insulating film formed over the gate electrode;
a microcrystalline semiconductor film including a channel formation region formed over the gate insulating film;
a buffer layer formed over and being in contact with the microcrystalline semiconductor film;
a channel protective layer formed over and being in contact with the buffer layer wherein the channel protective layer overlaps the channel formation region;
a source region and a drain region formed over the channel protective layer and the buffer layer;
a source electrode and a drain electrode formed over the source region and the drain region; and
a pixel electrode electrically connected to one of the source electrode and the drain electrode,
wherein end portions of the microcrystalline semiconductor film are positioned more inwardly than end portions of the gate electrode.
2. The light-emitting device according to claim 1, wherein the buffer layer is an amorphous semiconductor film.
3. The light-emitting device according to claim 2, wherein the amorphous semiconductor film contains nitrogen.
4. The light-emitting device according to claim 2, wherein the amorphous semiconductor film contains hydrogen.
5. The light-emitting device according to claim 2, wherein the amorphous semiconductor film contains fluorine, chlorine, bromine, or iodine.
6. The light-emitting device according to claim 2, wherein the amorphous semiconductor film contains nitrogen, carbon, and oxygen at a total concentration of greater than or equal to 1\xd71020 atomscm3 and less than or equal to 15\xd71020 atomscm3.
7. The light-emitting device according to claim 1, wherein an area of the source region and the drain region which overlaps with the pixel electrode is larger than that of the source electrode and the drain electrode which overlaps with the pixel electrode.
8. An electronic device having the light-emitting device according to claim 1, wherein the electronic device is one selected from the group consisting of a camera, a goggle-type display, a car navigation system, a projector, a car stereo, a personal computer, a portable information terminal, a television device, and a lamp.
9. The light-emitting device according to claim 1,
wherein the gate electrode has an upper surface and a tapered-shape side surface,
wherein the microcrystalline semiconductor film is over the upper surface of the gate electrode, and
wherein the microcrystalline semiconductor film is not overlapped with the tapered-shape side surface.
10. The light-emitting device according to claim 1, wherein the channel protective layer comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, and silicon nitride oxide.
11. The light-emitting device according to claim 1, wherein the channel protective layer comprises a material selected from the group consisting of a photosensitive organic material and a non-photosensitive organic material.
12. A light-emitting device comprising:
a pixel portion and a driver circuit over a substrate, each of the pixel portion and the driver circuit comprising:
a gate electrode;
a first insulating film formed over the gate electrode;
a microcrystalline semiconductor film including a channel formation region formed over the first insulating film;
a buffer layer formed over and being in contact with the microcrystalline semiconductor film;
a channel protective layer formed over and being in contact with the buffer layer wherein the channel protective layer overlaps the channel formation region;
a source region and a drain region formed over the channel protective layer and the buffer layer;
a source electrode and a drain electrode formed over the source region and the drain region; and
a second insulating film formed over the channel protective layer, the source electrode, and the drain electrode;
a pixel electrode electrically connected to one of the source electrode and the drain electrode of the pixel portion;
a partition formed over the pixel electrode;
a light emitting layer formed over the pixel electrode and the partition; and
a common electrode formed over the light emitting layer,
wherein end portions of the microcrystalline semiconductor film of the pixel portion and the driver circuit are positioned more inwardly than end portions of the gate electrode of the pixel portion and the driver circuit.
13. The light-emitting device according to claim 12, wherein the buffer layer of the pixel portion and the driver circuit is an amorphous semiconductor film.
14. The light-emitting device according to claim 13, wherein the amorphous semiconductor film contains nitrogen.
15. The light-emitting device according to claim 13, wherein the amorphous semiconductor film contains hydrogen.
16. The light-emitting device according to claim 13, wherein the amorphous semiconductor film contains fluorine, chlorine, bromine, or iodine.
17. The light-emitting device according to claim 13, wherein the amorphous semiconductor film contains nitrogen, carbon, and oxygen at a total concentration of greater than or equal to 1\xd71020 atomscm3 and less than or equal to 15\xd71020 atomscm3.
18. The light-emitting device according to claim 12, wherein an area of the source region and the drain region of the pixel portion which overlaps with the pixel electrode is larger than that of the source electrode and the drain electrode of the pixel portion which overlaps with the pixel electrode.
19. An electronic device having the light-emitting device according to claim 12, wherein the electronic device is one selected from the group consisting of a camera, a goggle-type display, a car navigation system, a projector, a car stereo, a personal computer, a portable information terminal, a television device, and a lamp.
20. The light-emitting device according to claim 12,
wherein the gate electrode has an upper surface and a tapered-shape side surface,
wherein the microcrystalline semiconductor film is over the upper surface of the gate electrode, and
wherein the microcrystalline semiconductor film is not overlapped with the tapered-shape side surface.
21. The light-emitting device according to claim 12, wherein the channel protective layer comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, and silicon nitride oxide.
22. The light-emitting device according to claim 12, wherein the channel protective layer comprises a material selected from the group consisting of a photosensitive organic material and a non-photosensitive organic material.