1. An organic light emitting device, comprising an anode, a cathode, and a light emitting layer disposed between the anode and the cathode; and
an electron transport layer disposed between the cathode and the light emitting layer, and the electron transport layer comprising a material of an organic metal chelate.
2. The organic light emitting device according to claim 1, wherein the organic metal chelate has a lowest unoccupied molecular orbital (LUMO) energy level of \u22124.2 eV\u02dc\u22123.0 eV.
3. The organic light emitting device according to claim 2, wherein the organic metal chelate has a highest occupied molecular orbital (HOMO) energy level greater than or equal to \u22126.0 eV, and a hole blocking layer is disposed between the light emitting layer and the electron transport layer.
4. The organic light emitting device according to claim 2, wherein the organic metal chelate has a highest occupied molecular orbital (HOMO) energy level less than \u22126.0 eV, and the light emitting layer is in direct contact with the electron transport layer.
5. The organic light emitting device according to claim 2, wherein the organic metal chelate has a lowest unoccupied molecular orbital (LUMO) energy level of \u22123.9 eV\u02dc\u22123.3 eV.
6. The organic light emitting device according to claim 1, wherein the organic metal chelate has a lowest unoccupied molecular orbital (LUMO) energy level greater than a lowest unoccupied molecular orbital (LUMO) energy level of the cathode and less than a lowest unoccupied molecular orbital (LUMO) energy level of the light emitting layer, and the absolute value of the difference between the lowest unoccupied molecular orbital (LUMO) energy level of the organic metal chelate and the lowest unoccupied molecular orbital (LUMO) energy level of the cathode is less than or equal to 1.2 eV.
7. The organic light emitting device according to claim 6, wherein the absolute value of the difference between the lowest unoccupied molecular orbital (LUMO) energy level of the organic metal chelate and the lowest unoccupied molecular orbital (LUMO) energy level of the cathode is less than or equal to 0.9 eV.
8. The organic light emitting device according to claim 6, wherein the absolute value of the difference between the lowest unoccupied molecular orbital (LUMO) energy level of the organic metal chelate and the lowest unoccupied molecular orbital (LUMO) energy level of the cathode is less than or equal to 0.6 eV.
9. The organic light emitting device according to claim 1, wherein the organic metal chelate comprises CuPc or ZnPc.
10. The organic light emitting device according to claim 1, wherein the anode is a patterned indium tin oxide (ITO) layer.
11. The organic light emitting device according to claim 1, further comprising:
a hole transport layer disposed between the anode and the light emitting layer; a hole injecting layer disposed between the anode and the hole transport layer, and an electron injecting layer disposed between the electron transport layer and the cathode.
12. The organic light emitting device according to claim 1, wherein the organic light emitting device has a stacked structure connected in series.
13. A display device, comprising
an organic light emitting device comprising an anode, a cathode, a light emitting layer disposed between the anode and the cathode; and
an electron transport layer disposed between the cathode and the light emitting layer, and the electron transport layer comprising a material of an organic metal chelate.
14. The display device according to claim 13, wherein the organic metal chelate has a lowest unoccupied molecular orbital (LUMO) energy level of \u22124.2 eV\u02dc\u22123.0 eV.
15. The display device according to claim 14, wherein the organic metal chelate has a highest occupied molecular orbital (HOMO) energy level greater than or equal to \u22126.0 eV, and a hole blocking layer is disposed between the light emitting layer and the electron transport layer.
16. The display device according to claim 14, wherein the organic metal chelate has a highest occupied molecular orbital (HOMO) energy level less than \u22126.0 eV, and the light emitting layer is in direct contact with the electron transport layer.
17. The display device according to claim 14, wherein the organic metal chelate has a lowest unoccupied molecular orbital (LUMO) energy level of \u22123.9 eV\u02dc\u22123.3 eV.
18. The display device according to claim 13, wherein the organic metal chelate has a lowest unoccupied molecular orbital (LUMO) energy level greater than a lowest unoccupied molecular orbital (LUMO) energy level of the cathode and less than a lowest unoccupied molecular orbital (LUMO) energy level of the light emitting layer, and the absolute value of the difference between the lowest unoccupied molecular orbital (LUMO) energy level of the organic metal chelate and the lowest unoccupied molecular orbital (LUMO) energy level of the cathode is less than or equal to 1.2 eV.
19. The display device according to claim 18, wherein the absolute value of the difference between the lowest unoccupied molecular orbital (LUMO) energy level of the organic metal chelate and the lowest unoccupied molecular orbital (LUMO) energy level of the cathode is less than or equal to 0.9 eV.
20. The organic light emitting device according to claim 18, wherein the absolute value of the difference between the lowest unoccupied molecular orbital (LUMO) energy level of the organic metal chelate and the lowest unoccupied molecular orbital (LUMO) energy level of the cathode is less than or equal to 0.6 eV.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A bottom fixation type integrated circuit chip cooling structure comprising:
a top plate member, said top plate member having an edge lip that bounds a top surface and a bottom surface;
a bottom plate member, said bottom plate member having an edge lip that bounds a top surface and a bottom surface, the edge lips of said top and bottom plate members being bonded together so as to define a vapor chamber between said top and bottom plate members;
wherein said bottom plate member has at least one through hole;
at least one internally threaded connecting member provided between said top plate member and said bottom plate member corresponding to said at least one through hole, said at least one internally threaded connecting member having a bottom end inserted downwardly through one of said at least one through hole and peripherally sealed to the periphery of the corresponding through hole for mounting;
said at least one internally threaded connecting member each has a top end thereof bonded to the bottom surface of said top plate member, so that said internally threaded connecting member extends through the bottom plate member;
the bottom end of said at least one connecting member is configured to attach to a circuit board;
a heat sink bonded to the top surface of said top plate member; and
an internally sintered metal capillary wick provided within said vapor chamber.
2. The bottom fixation type integrated circuit chip cooling structure as claimed in claim 1, wherein each said at least one internally threaded connecting member has a respective bottom end thereof downwardly extended out of said bottom plate member through the respective through hole and forming a foot.
3. The bottom fixation type integrated circuit chip cooling structure as claimed in claim 1, wherein each said at least one connecting member has a bottom center screw hole in the respective bottom end.
4. The bottom fixation type integrated circuit chip cooling structure as claimed in claim 1, wherein said internally sintered metal capillary wick comprises an upper plate-shaped wick element located on the bottom surface of said top plate member, a bottom plate-like wick element located on the top surface of said bottom plate member, and a plurality of vertical wick elements provided between said upper plate-like wick element and said bottom plate-like wick element, said vertical wick elements each having a first end integral with one of said top and bottom plate members and a second end supported on the other of said top and bottom plate members.
5. The bottom fixation type integrated circuit chip cooling structure as claimed in claim 1, wherein said heat sink is comprised of a plurality of radiation fins directly bonded to the top surface of said top plate member.