1. A developing method comprising the steps of:
forming an anti-reflective film on a substrate and forming a resist film on the anti-reflective film, portions of said resist film being in a pattern, and thereafter;
mixing a liquid with a developing solution to form a produced developing solution,
depositing the produced developing solution onto said resist film, said produced developing solution dissolving said portions of the resist film, and thereafter;
mixing the liquid with the developing solution to form an adjusted developing solution,
depositing the adjusted developing solution onto said anti-reflective film and onto remaining portions of the resist film, said adjusted developing solution dissolving said anti-reflective film faster than dissolving said remaining portions of the resist film,
wherein at least one property of the adjusted developing solution is lower than one property of the produced developing solution, in at least one property being from a group consisting of a concentration and a temperature.
2. A developing method as set forth in claim 1, wherein said adjusted developing solution dissolves said anti-reflective film without dissolving said remaining portions of the resist film.
3. A developing method as set forth in claim 1, wherein said anti-reflective film inhibits a reflection of light.
4. A developing method as set forth in claim 1, wherein said anti-reflective film is between a wafer and said resist film.
5. A developing method as set forth in claim 1, wherein a concentration of the liquid is higher in said adjusted developing solution than within said produced developing solution.
6. A developing method as set forth in claim 5, wherein said liquid is water.
7. A developing method as set forth in claim 1, wherein said remaining portions of the resist film mask said anti-reflective film.
8. A developing method as set forth in claim 1, wherein said at least one property is said concentration.
9. A developing method as set forth in claim 1, wherein said at least one property is said temperature.
10. A developing method as set forth in claim 1, wherein said at least one property is said concentration and said temperature.
11. A developing method comprising the steps of:
forming an anti-reflective film on a substrate and forming a resist film on the anti-reflective film, portions of said resist film being in a pattern, and thereafter;
mixing a liquid with a developing solution to form a produced developing solution,
depositing the produced developing solution onto said resist film, said produced developing solution dissolving said portions of the resist film, and thereafter;
mixing the liquid with the developing solution to form an adjusted developing solution,
depositing the adjusted developing solution onto said anti-reflective film and onto remaining portions of the resist film, said adjusted developing solution dissolving said anti-reflective film faster than dissolving said remaining portions of the resist film,
wherein a concentration of the liquid is higher in said adjusted developing solution than within said produced developing solution and
wherein at least one property of the adjusted developing solution is lower than one property of the produced developing solution, the at least one property being from a group consisting of a concentration and a temperature.
12. A developing method as set forth in claim 11, wherein a stirring stick within a nozzle mixes said developing solution with said liquid.
13. A developing method as set forth in claim 11, wherein said produced developing solution and said adjusted developing solution are discharged from a nozzle.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for forming a diffusion barrier layer between a copper metal layer and a silicon substrate comprising the steps of:
a) preparing the silicon substrate;
b) contacting the silicon substrate with a composition comprising self-assembled monolayer subunits and a solvent;
c) removing the solvent thereby forming the diffusion barrier; and
d) forming a copper metal layer on the diffusion barrier as formed in step (c) using a vapor deposition process, said diffusion barrier inhibiting copper diffusion into the substrate, wherein the self-assembled monolayer subunit is of the following structure:
\u2003wherein Y is an O-alkyl group, and wherein R2 is a group selected from
\u2003and
\u2003wherein R3, R4 and R5 are independently selected from the group consisting of hydrogen, alkyl groups, heteroalkyl groups, halo groups, NH2, NHR6, NR6R7, OH, OR6, SH, SR6, CHO, COOH and CN, and wherein R6 and R7 are alkyl groups, and wherein n is an integer ranging from 1 to 5.
2. The method of claim 1 wherein the self assembled monolayer subunit is of the following structure:
wherein Y is an O-alkyl group, and wherein R2 is an alkyl group, linked to an aryl group or heteroaryl group.
3. The method according to claim 2, wherein R2 is an alkyl group of the following structure:
wherein R3, R4 and R5 are independently selected from the group consisting of hydrogen, alkyl groups, heteroalkyl groups, halo groups, NH2, NHR6, NR6R7, OH, OR6, SH, SR6, CHO, COOH and CN, and wherein R6 and R7 are alkyl groups, and wherein n is an integer ranging from 1 to 5.
4. The method according to claim 3, wherein Y is OCH3.
5. The method according to claim 2, wherein R2 is an heteroarvi group of the following structure:
wherein R3 and R4 are hydrogen, and wherein n is an integer ranging from 1 to 5.
6. The method according to claim 5, wherein R3, R4 and R5 are hydrogen and n is 2.
7. The method according to claim 2, wherein Y is OCH3.
8. The method according to claim 7, wherein R2 is an alkyl group of the following structure:
and wherein R3 and R4 are hydrogen and n is 2.
9. The method according to claim 1, wherein the silicon substrate preparation comprises the formation of a silicon oxide surface.
10. The method according to claim 1, wherein the method further comprises the step of heating the silicon substrate and the composition during contact.
11. A method of forming a device, the method comprising:
(a) providing a substrate;
(b) providing a diffusion barrier layer, wherein the diffusion barrier layer comprises a self-assembled monolayer, wherein the self-assembled monolayer is a single layer of molecules, and wherein the molecules in the self-assembled monolayer have first ends attached to the substrate and second ends, comprising aromatic groups, projecting upward from the substrate; and
(c) forming a copper metal layer on the diffusion barrier layer as formed in step (b) using a vapor deposition process, wherein the copper in the metal layer is in direct contact with the second ends of the molecules in the self-assembled monolayer, and the diffusion barrier prevents diffusion of copper atoms into the substrate.
12. The method of claim 11 wherein the device is capable of being biased at about 2 MVcm at about 200\xb0 C. for about 30 minutes without diffusion of the copper into the substrate.
13. The method of claim 11 wherein the substrate comprises silicon oxide on silicon.
14. The method of claim 11 wherein the vapor deposition process is a sputtering process.