1. A method for preparing a nanohybrid resin of carbon nanomaterials and phenolic resin to be applied in carbon containing refractories and in carbon-carbon composites, wherein said method comprises the steps of
a) mixing and ultrasonicating said carbon nanomaterial in an organic solvent to obtain a colloidal dispersion of carbon nanomaterial wherein said carbon nanomaterial comprises carbon black and carbon nano tube and said organic solvent comprises ethylene glycol andor 1,2 propanediol;
b) adding and mixing 10-15% by weight of the colloidal dispersion of said carbon nanomaterial to phenolic resin to obtain said nanohybrid resin, wherein said carbon nanomaterials act as a graphitizing agent during conversion of the resin to a graphite phase; and
d) Heating or firing said nanohybrid resin at 1100\xb0 C. to obtain a residual carbon containing refractory.
2. The method as claimed in claim 1, wherein said method further comprises step of: transferring said graphite phase to said residual carbon of nano hybrid resin.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A device comprising:
a layer of substrate material;
a layer of high-K dielectric material on the layer of substrate material, the layer of high-K dielectric material being divided by a trench into a first portion and a second portion;
a first gate on the first portion of high-K dielectric material;
a second gate on the second portion of high-K dielectric material; and
a first spacer adjacent to a first side of the first gate adjacent the trench, the first spacer extending from a position above a bottom surface of the first gate into the trench to a position below a top surface of the first portion of high-K dielectric material.
2. The device of claim 1 wherein the trench has side walls that extend from a top surface of the layer of high-K dielectric material toward the layer of substrate material, and the side walls are substantially straight and substantially parallel to each other.
3. The device of claim 1 wherein the trench has side walls that extend from a top surface of the layer of high-K dielectric material to a top surface of the layer of substrate material.
4. The device of claim 3 wherein a region of the top surface of the layer of substrate material is substantially planar, the region including a portion of the layer of substrate material beneath the trench and portions of the layer of substrate material beneath the first and second portions of the high-K dielectric material.
5. The device of claim 4 wherein the side walls are substantially straight and substantially parallel to each other.
6. The device of claim 5 wherein the high-K dielectric material comprises a material selected from the group consisting of hafnium dioxide and zirconium dioxide.
7. The device of claim 1 wherein the first spacer extends from the position above the bottom surface of the first gate to a bottom of the trench.
8. The device of claim 1 wherein the first spacer extends from the position above the bottom surface of the first gate to a top surface of the layer of substrate material.
9. The device of claim 1, further comprising a second spacer adjacent to a second side of the first gate, the second spacer extending from a position above a bottom surface of the first gate to a top surface of the layer of high-K dielectric material.