1. A gloss applicator, disposed downstream from a fusing device for fusing a non-fused image on a recording medium, the gloss applicator comprising:
a pair of pressure units to define a gloss nip therebetween through which the recording medium is passed to enhance glossiness of the fused image;
an endless belt, disposed in one of the pressure units in an extended loop configuration, to transport the recording medium thereon, an outer face of the endless belt contacting the fused image on the recording medium; and
a belt suction unit, disposed inside the endless belt loop, to exert suction on the endless belt to locally deform a given portion of the endless belt and separate the recording medium from the endless belt at the given portion as a separation position.
2. The gloss applicator of claim 1, wherein the belt suction unit is moveable between an upstream position and a downstream position in a moving direction in which the endless belt moves.
3. The gloss applicator of claim 1, wherein the belt suction unit is configured as a plurality of belt suction units disposed-inside the endless belt loop along the moving direction in which the endless belt moves, and the separation position at which the recording medium is separated from the endless belt is changeable in the moving direction in which the endless belt moves by selective activation of one of the plurality of belt suction units.
4. The gloss applicator of claim 1, wherein the belt suction unit has a contact portion to contact the endless belt, and the contact portion has a given shape to reduce a friction between the belt suction unit and the endless belt.
5. The gloss applicator of claim 4, wherein the contact portion includes a rotatable member.
6. The gloss applicator of claim 4, wherein the belt suction unit has a rounded contact portion that contacts the endless belt to reduce friction between the belt suction unit and the endless belt.
7. The gloss applicator of claim 1, wherein the belt suction unit is activated when a leading edge of a recording medium sheet transported by the endless belt is to reach the belt suction unit.
8. The gloss applicator of claim 1, wherein the belt suction unit uses depressurized gas to exert suction on the endless belt.
9. The gloss applicator of claim 1, wherein the belt suction unit is a magnet unit having a magnet, in which a magnetic force is used to attract the endless belt.
10. The gloss applicator of claim 1, further comprising a cooling device, disposed inside the endless belt loop at a position after the gloss nip and before the belt suction unit, to cool the endless belt.
11. An image forming apparatus, comprising the gloss applicator of claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a device, the method comprising:
forming a metal layer over a substrate; and
forming at least one barrier layer, the forming comprising:
depositing a solution comprising a metal complex comprising a central metal atom or ion and at least one organic ligand over the substrate; and
at least partially decomposing the at least one organic ligand of the metal complex.
2. The method of claim 1,
wherein the solution comprises
a solvent; and
about the maximum soluble amount of metal complex in the solvent.
3. The method of claim 1,
wherein the organic ligand is an oximate ligand having the structure represented by Formula I
wherein R1 is selected from the group consisting of hydrogen and C1-C4 alkyl and R2 is selected from the group consisting of hydrogen, C1-C6 alkyl, C6-C14 aryl, and alkylaryl.
4. The method of claim 1,
wherein the metal complex is decomposed at a temperature below about 250\xb0 C.
5. The method of claim 1,
wherein the device is a semiconductor device.
6. The method of claim 1,
wherein the substrate comprises a module with at least one semiconductor device;
wherein the barrier layer is formed over the semiconductor device.
7. The method of claim 1,
wherein the substrate comprises a module with a plurality of semiconductor devices;
wherein the barrier layer is formed over the semiconductor devices.
8. The method of claim 1,
wherein the substrate having a surface and a contact hole extending from the surface of the substrate into the body of the substrate, the contact hole having at least one side wall;
wherein the barrier layer is formed over the at least one side wall of the contact hole; and
wherein the contact hole is at least partially filled with the metal layer.
9. The method of claim 1,
wherein the metal layer is formed of at least one of a noble metal or an oxidable metal.
10. The method of claim 1,
wherein the barrier layer is formed as an adhesion promoting layer for the metal layer between the metal layer and the substrate.
11. The method of claim 1,
wherein the barrier layer is formed as a ceramic layer.
12. The method of claim 1,
wherein the metal layer is formed over the barrier layer.
13. The method of claim 1,
wherein the barrier layer is formed over the metal layer.
14. A device, comprising,
a substrate having a surface, wherein the surface is substantially free of oxygen derivatives;
a barrier layer over the surface; and
a metal layer over the barrier layer;
wherein the barrier layer is formed such that the barrier layer prevents a diffusion of the material of the metal layer through the barrier layer into the substrate.
15. A device, comprising,
a substrate having a surface and a contact hole extending from the surface of the substrate into the body of the substrate, the contact hole having at least one side wall;
a barrier layer disposed over the substrate; and
a metal layer disposed over the barrier layer;
wherein the barrier layer is formed over the at least one side wall of the contact hole; and
wherein the contact hole is at least partially filled with the metal layer.
16. A device, comprising,
a substrate comprising a module having a plurality of semiconductor devices; and
a ceramic barrier layer formed in physical contact with the semiconductor devices.