1-10. (canceled)
11. A method for making a lithographic printing plate comprising the steps of:
providing a heat-sensitive lithographic printing plate precursor including on a heat sensitive coating on a support having a hydrophilic surface or which is provided with a hydrophilic layer, the heat-sensitive coating including a first layer having a first polymer which is water-insoluble and alkali-soluble, and on the first layer, a second layer having a second polymer which is water-insoluble and alkali-soluble, and an infrared absorbing dye present in at least one of the first and second layer;
image-wise exposing the precursor with IR-radiation or heat wherein the second layer exhibits an increased solubility in an aqueous alkaline developing solution; and
developing the image-wise exposed precursor with an aqueous alkaline developing solution;
the solution including:
an alkaline silicate or metasilicate in a concentration in the range of 1 to 14% by weight;
a mono alkali metal or ammonium salt of an organic carboxylic acid, having 4 to 12 carbon atoms and substituted with 3 to 11 hydroxyl groups;
an alkali metal or ammonium salt of an aliphatic carboxylic acid, selected from octanoic acid, nonanoic acid, decanoic acid, or undecanoic acid, in a concentration in the range of 0.01 to 2.0 moll; and
a blockcopolymer including a chain segment of ethyleneoxide and propyleneoxide, substituted on an ethylenediamine or on a diethylenetriamine group, in a concentration in the range of 0.05 to 5% by weight; wherein
the ratio of the concentration in weight % of the salt of the aliphatic carboxylic acid to the concentration in weight % of the blockcopolymer is between 1 and 20.
12. A method according to claim 11, wherein the ratio of the concentration in weight % of the salt of the aliphatic carboxylic acid to the concentration in weight % of the blockcopolymer is between 2 and 15.
13. A method according to claim 11, wherein the ratio of the concentration in weight % of the salt of the aliphatic carboxylic acid to the concentration in weight % of the blockcopolymer is between 3 and 10.
14. A method according to claim 11, wherein the salt of the aliphatic acid is present in the alkaline developing solution in a concentration ranging between 0.03 and 1.0 moll.
15. A method according to claim 11, wherein the salt of the aliphatic carboxylic acid is octanoic acid or nonanoic acid.
16. A method according to claim 11, wherein the mono alkali metal or ammonium salt of an organic carboxylic acid, having 4 to 12 carbon atoms and substituted with 3 to 11 hydroxyl groups, is a sugar including a carboxylic acid group.
17. A method according to claim 16, wherein the sugar including the carboxylic acid group is gluconic acid.
18. A method according to claim 11, wherein the first polymer includes sulphonamide groups in the side chain of the polymer backbone.
19. A method according to claim 11, wherein the second polymer is a phenolic resin.
20. A method according to claim 11, wherein the precursor further includes, on top of the second layer, a top layer including a polymer or surfactant having siloxane or perfluoroalkyl units.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor structure comprising:
a substrate with a {100} crystal surface plane comprising a plurality of adjacent structured regions at a top side of the substrate, wherein the plurality of adjacent structured regions comprise adjacent substrate surfaces with {111} crystal planes;
a III-V semiconductor material layer above the top side of the substrate with a semiconductor device region, which comprises at least one semiconductor device structure, wherein the semiconductor device region is arranged above the plurality of adjacent structured regions at the top side of the substrate; and
a region surrounding the plurality of adjacent structured regions, wherein the region comprises a plurality of adjacent structured regions having adjacent substrate surfaces with {111} crystal planes and substrate surfaces with crystal planes different from {111} crystal planes.
2. The semiconductor structure according to claim 1, wherein the plurality of adjacent structured regions comprise exclusively adjacent substrate surfaces with {111} crystal planes.
3. The semiconductor structure according to claim 1, wherein the adjacent substrate surfaces with {111} crystal planes form trench structures.
4. The semiconductor structure according to claim 1, further comprising a buffer layer, arranged between the substrate and the III-V semiconductor material layer.
5. The semiconductor structure according to claim 4, wherein the buffer layer and the substrate comprise less crystal lattice mismatch than the III-V semiconductor material layer and the substrate.
6. The semiconductor structure according to claim 1, wherein a material of the substrate and a material of the III-V semiconductor material layer comprise a coincidence site lattice.
7. The semiconductor structure according to claim 1, wherein the III-V semiconductor material layer comprises gallium nitride (GaN).
8. The semiconductor structure according to claim 1, wherein the at least one semiconductor device structure is a field-effect transistor (FET) structure, a high electron mobility transistor (HEMT) structure, a diode structure or an electric circuit.
9. The semiconductor structure according to claim 1, wherein a first region of the III-V semiconductor material layer, which overlaps the plurality of adjacent structured regions, comprises a higher crystal lattice tension or crystal lattice compression strength than a second region of the III-V semiconductor material layer, which overlaps the region.
10. The semiconductor structure according to claim 1, wherein the III-V semiconductor material layer further comprises alignment marks.
11. The semiconductor structure according to claim 1, wherein the substrate further comprises lattice stress compensation regions and the III-V semiconductor material layer comprises a thickness between 1 nm and 50 \u03bcm.
12. A method of forming the semiconductor structure of claim 1, the method comprising:
forming the plurality of adjacent structured regions at the top side of the substrate;
forming the III-V semiconductor material layer above the top side of the substrate; and
forming the at least one semiconductor device structure in the semiconductor device region of the III-V semiconductor material layer.
13. The method according to claim 12, wherein forming of the plurality of adjacent structured regions comprises depositing a masking layer at the top side of the substrate, removing locally the masking layer from the top side of the substrate, so that the top side of the substrate with the {100} crystal surface plane is locally exposed and etching the locally exposed top side of the substrate, so that the plurality of adjacent structured regions which comprise the adjacent substrate surfaces with {111} crystal planes are formed.
14. The method according to claim 12, further comprising arranging a buffer layer between the top side of the substrate and the III-V semiconductor material layer.
15. The method according to claim 12, wherein the forming of the III-V semiconductor material layer comprises performing an epitaxial growth of the III-V semiconductor material layer.
16. The method according to claim 12, wherein forming the plurality of adjacent structured regions, further comprises forming the region surrounding the plurality of adjacent structured regions.
17. The method according to claim 16, wherein forming the region is performed, so that the region comprises substrate surfaces with crystal planes different from {111} crystal planes.
18. The method according to claim 12, further comprising removing the substrate below the semiconductor device structure.
19. The method according to claim 12, wherein forming the plurality of adjacent structured regions further comprises forming a lattice stress compensation region and wherein the III-V semiconductor material layer is formed so that the III-V semiconductor material layer comprises a thickness between 1 nm and 50 \u03bcm.
20. A semiconductor structure comprising:
a substrate with a {100} crystal surface plane comprising a plurality of adjacent structured regions at a top side of the substrate, wherein the plurality of adjacent structured regions comprise adjacent substrate surfaces with {111} crystal planes;
a III-V semiconductor material layer, above the top side of the substrate with a semiconductor device region, wherein the semiconductor device region is arranged above the plurality of adjacent structured regions,
a region surrounding the plurality of adjacent structured regions, wherein the region comprises a plurality of adjacent structured regions having adjacent substrate surfaces with {111} crystal planes and substrate surfaces with crystal planes different from {111} crystal planes,
a buffer layer between the substrate and the III-V semiconductor material layer; and
a field-effect transistor (FET) structure, a diode structure, a high-electron-mobility transistor (HEMT) structure or an electric circuit arranged in the semiconductor device region.