1. A procedure for the manufacture of molded parts, in particular threads or films, the procedure comprising:
forming at least two separate polymer solutions, wherein a first polymer solution comprises at least one polymer in a solvent containing amino-N-oxide and wherein the at least one polymer is selected from the group consisting of polysaccharide derivative and polyvinyl alcohol; and
simultaneously extruding the at least two separate polymer solutions to form a combined extrudate and precipitating the extrudate by bringing it into contact with a coagulant, wherein at least one of the polymer solutions contains at least one inorganic or organic additive selected from the group consisting of oxides, carbides, borides, nitrides, oxynitrides, sialones and aluminosilicates, carbon-containing materials, metal powders, metal salts, polymer fibers, particle suspensions, ceramic-forming low molecular compounds and ceramic-forming high-molecular compounds, the additive having a functional ability selected from the group consisting of catalytically active, electronically conductive, ionically conductive, piezoelectric, insulating, pore-forming, mechanically strengthening, absorbing active and surface active, and wherein the polymer solutions have a weight ratio of polymer to additive of 10:1 to 1:100.
2. The procedure according to claim 1, wherein at least two polymer solutions differ in at least one property selected from the group consisting of particle size, material composition and content of additives.
3. The procedure according to claim 1 wherein the additives have a particle size ranging from 0.01 to 1000 \u03bcm.
4. The procedure according to claim 1, wherein the polymer solutions are extruded at different volumetric rates.
5. The procedure according to claim 1, wherein the two or more polymer solutions are concentrically extruded and, to form massive bi- or multi-component threads, coagulated only from outside.
6. The procedure according to claim 1, wherein the two or more polymer solutions are concentrically extruded and, to form massive three-component threads, an additive dispersion is centrally supplied and coagulated from outside.
7. The procedure according to claim 1, wherein the volumetric ratio between the two or more extruded polymer solutions and a centrally supplied space-filling liquid or a gas is selected in such a way as to expand the polymer solution hose.
8. The procedure according to claim 1, wherein the two or more polymer solutions are concentrically extruded and, to form bi- or multi-component threads, coagulated from inside and outside.
9. The procedure according to claim 1, wherein th extrudate is stretched in an air gap before precipitation to set the dimensions of the core and jacket layers.
10. The procedure according to claim 1, wherein the coagulated extrudate is dried, and its polymer content is removed andor carbonized via thermal treatment.
11. The procedure according to claim 10, wherein the thermal treatment is conducted in a temperature range of 250 to 3500\xb0 C. in the presence of oxygen, inert gas or under a vacuum.
12. The procedure according to claim 10, wherein the thermal treatment takes place in a first stage at a lower temperature, and in a second stage at a higher temperature, and that oxidizing conditions prevail only in one of the two stages.
13. The procedure according to claim 1, wherein monohydrate of the N-oxide is used as the solvent.
14. The procedure according to claim 1, wherein cellulose is used as the polymer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A sample surface processing method comprising:
etching a sample having a mask material on a surface thereof by
generating a first plasma for etching the sample mounted on a sample stage provided in a vacuum chamber,
applying a high frequency bias to the sample stage, and
performing the surface processing of the sample on the sample stage by the first plasma, and then
removing a cured layer of the mask material on the sample resulting from heat input from the first plasma in the same vacuum chamber in which the etching is performed by
generating a second plasma of a mixed gas of an oxygen gas and a fluorine-containing gas introduced into the vacuum chamber,
applying a high frequency bias to the sample and
removing the cured layer of the mask material by the second plasma, and then
ashing the sample in the same vacuum chamber in which the etching is performed by
generating a third plasma of an oxygen gas introduced into the vacuum chamber,
stopping the high frequency bias, and
removing the mask material left after removal of the cured layer by the third plasma.
2. The sample surface processing method according to claim 1, wherein the pressure of the gas during the ashing is set at 0.2 to 2 Pa.
3. The sample surface processing method according to claim 1, wherein the fluorine-containing gas is preferably any of CHF3, CH2F2, CF4, and SF6.
4. The sample surface processing method according to claim 1, wherein the removal of the mask material of the sample and removal of a deposit attached to the sidewall of the vacuum chamber are performed at the same time during ashing.
5. The sample surface processing method according to claim 1, wherein removal of a deposit attached to the inner wall of the vacuum chamber is performed during ashing.
6. A sample surface processing method by a sample processing apparatus comprising: a vacuum chamber; means for generating a plasma in the vacuum chamber; a sample stage provided in the vacuum chamber for mounting a sample to be processed thereon; and a power source for applying a high frequency bias to the sample, wherein the surface processing method comprises:
etching a sample having a mask material on a surface thereof by
generating a first plasma in the vacuum chamber,
applying a high frequency bias to the sample stage, and
performing the surface processing of the sample on the sample stage by the first plasma, and then
performing ashing of the sample in the same vacuum chamber in which etching is performed to remove the mask material by
generating a second plasma of a mixed gas of an oxygen gas and a fluorine-containing gas;
applying a high frequency bias to the sample, and
removing only a cured surface layer of the mask material of the sample resulting from heat input from the first plasma by the second plasma; and then
generating a third plasma of an oxygen gas,
stopping the high frequency bias, and
performing the ashing by the third plasma for removing the mask material left after the removal of the cured surface layer
monitoring the plasma emission intensity of a reaction product in the vacuum chamber, and the changes in interference light; and
automatically determining the state of the surface processing based on the monitor result, and performing switching between supplying the oxygen gas and the mixed gas, and switching of the high frequency bias to the sample.
7. The sample surface processing method according to claim 6, wherein the pressure of the gas during ashing is set at 0.2 to 2 Pa.
8. The sample surface processing method according to claim 6, wherein the fluorine-containing gas is preferably any of CHF3, CH2F2, CF4, and SF6.
9. The sample surface processing method according to claim 6, wherein the removal of the mask material of the sample and removal of a deposit attached to the sidewall of the vacuum chamber are performed at the same time during ashing.
10. The sample surface processing method according to claim 6, wherein removal of a deposit attached to the inner wall of the vacuum chamber is performed during ashing.