1. A FinFET device comprising:
a first fin and a second fin, each fin comprising a channel region and source and drain regions extending from said channel region,
Wherein said first fin and said second fin have different heights.
2. The FinFET device in claim 1, further comprising a gate conductor positioned adjacent said first fin and said second fin, wherein said gate conductor runs perpendicular to said first fin and said second fin.
3. The FinFET device in claim 2, wherein said gate conductor crosses said channel region of each of said first fin and second fin.
4. The FinFET device in claim 1, wherein said first fin and said second fin are parallel to one another.
5. The FinFET device in claim 1, wherein a ratio of the height of said first fin to the height of said second fin comprises a ratio of one to 23.
6. The FinFET device in claim 5, wherein said ratio is used to tune to performance of said transistor.
7. The FinFET device in claim 5, wherein said ratio determines a total channel width of said transistor.
8. A FinFET device comprising:
a first fin and a second fin, each fin comprising a channel region and source and drain regions extending from said channel region; and
a gate conductor positioned adjacent said first and said second fin, wherein said gate conductor runs at an angle of sixty-seven and one-half degrees with respect to said first fin,
wherein said first fin and second fin have different heights.
9. An integrated circuit comprising:
a first FinFET transistor having a first fin; and
a second FinFET transistor having a second fin,
wherein each of said first fin and second fin comprise a channel region and source and drain regions extending from said channel region, and
wherein said first fin and said second fin have different heights.
10. The integrated circuit in claim 9,
wherein said first FinFET comprises a first gate conductor positioned adjacent to said first fin,
wherein said first gate conductor runs perpendicular to said first fin,
wherein said second FinFET comprises a second gate conductor positioned adjacent to said second fin, and
wherein said second gate conductor runs perpendicular to said second fin.
11. The integrated circuit in claim 10, wherein said first gate conductor crosses said channel region of said first fin, and wherein said second gate conductor crosses said channel region of said second fin.
12. The integrated circuit in claim 9, wherein a ratio of the height of said first fin to the height of said second fin comprises a ratio of one to 23.
13. The integrated circuit in claim 12, wherein said ratio is used to tune the performance of said circuit.
14. The integrated circuit in claim 12, wherein said ratio determines channel widths of said first FinFET and said second FinFET.
15. A method of manufacturing a FinFET device comprising:
forming an active silicon layer on a structure;
patterning a mask above said active silicon layer;
performing a thermal oxidation to reduce a height of a shortened region of said active silicon layer not protected by said mask;
removing said mask; and
patterning said active silicon layer into fins, wherein fins created from said shortened regions have a smaller height when compared to fins created from other regions of said active silicon layer.
16. The method in claim 15, further comprising forming said structure by growing a bottom oxide on a silicon substrate.
17. The method in claim 15, wherein said patterning of said active silicon layer comprises:
patterning a second mask over said active silicon layer; and
etching regions of said active silicon layer into said fins.
18. The method in claim 15, further comprising patterning a gate conductor over said fins such that said gate conductor crosses channel regions of said fins.
19. The method in claim 15, wherein said thermal oxidation process is controlled to reduce said height of said shortened region to 23 of the height of said active silicon layer.
20. The method in claim 15, wherein said thermal oxidation process is used to tune the performance of said FinFET device.
21. The method in claim 15, wherein said thermal oxidation process determines a total channel widths of said FinFET device.
22. An integrated circuit comprising:
a plurality of FinFET devices, each having at least one fin, wherein each fin comprises a channel region and source and drain regions extending from said channel region,
wherein at least two fins in said integrated circuit have different heights.
23. The integrated circuit in claim 22, wherein each of said FinFET transistors, further comprises a gate conductor positioned adjacent to said fin, wherein said gate conductor runs perpendicular to said fin.
24. The integrated circuit in claim 23, wherein said gate conductor crosses said channel region of said fin.
25. The integrated circuit in claim 22, wherein fins within each of said FinFET devices are parallel to one another.
26. The integrated circuit in claim 22, wherein a ratio of the height of shorter fins to taller fins comprises a ratio of one to 23.
27. The integrated circuit in claim 26, wherein said ratio is used to tune the performance of said integrated circuit.
28. The integrated circuit in claim 26, wherein said ratio determines a channel width of said FinFET devices.
29. A method of manufacturing an integrated circuit comprising FinFET devices, comprising:
forming an active silicon layer on a structure;
patterning a mask above said active silicon layer;
performing a thermal oxidation to reduce a height of shortened regions of said active silicon layer not protected by said mask; and
removing said mask;
patterning said active silicon layer into fins, wherein fins created from said shortened regions have a smaller height when compared to fins created from other regions of said active silicon layer.
30. The method in claim 29, further comprising forming said structure by growing a bottom oxide on a silicon substrate.
31. The method in claim 29, wherein said patterning of said active silicon layer comprises:
patterning a second mask over said active silicon layer; and
etching regions of said active silicon layer into said fins.
32. The method in claim 29, further comprising patterning gate conductors over said fins such that said gate conductors crosses channel regions of said fins.
33. The method in claim 29, wherein said thermal oxidation, process is controlled to reduce said height of said shortened region to 23 of the height of said active silicon layer.
34. The integrated circuit in claim 29, wherein said thermal oxidation process is used to tune the performance of said FinFET devices.
35. The integrated circuit in claim 29, wherein said thermal oxidation process determines channel widths of said FinFET devices.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for designing a jacket of an offshore fixed platform, the jacket having a plurality of jacket members including main leg members, diagonal members and horizontal members, the method comprising:
preparing a plurality of non-steel buoyancy tank groups, wherein each buoyancy tank group comprises a plurality of air bags; and
installing the prepared plurality of non-steel buoyancy tank groups on the jacket;
wherein more than 80 percent of jacket members between water surface and 40 meters (about 130 ft) below water surface are slender members with D (member diameter)t (member wall thickness) less than or equal to 30.
2. The method according to claim 1, wherein each of the air bag is made of nature rubber and multiple layers of polyester nets bonded together through a vulcanized process.
3. The method according to claim 1, wherein each of the air bag comprises a middle tubular section and two cone sections at each end.
4. The method according to claim 3, wherein each of the air bag comprises a plurality of rows of side ring pairs longitudinally attached to the sides of the air bag middle section.
5. The method according to claim 4, wherein the act of preparing a plurality of non-steel buoyancy tank groups comprises:
dividing a plurality of air bags into a plurality of groups, each group comprising two or more air bags; and
forming a sheet of air bags for each group by connecting adjacent air bags within the group laterally.
6. The method according to claim 5, wherein the act of forming a sheet of air bags comprises connecting the plurality of rows of side rings of each air bag with the corresponding plurality of rows of side rings of an adjacent air bag by a plurality of wires.
7. The method according to claim 5, wherein the act of installing the prepared plurality of non-steel buoyancy tank groups on the jacket comprises wrapping the prepared plurality of air bag sheets around the jacket main legs near water surface in a near vertical orientation.
8. The method according to claim 5, wherein the act of installing the prepared plurality of non-steel buoyancy tank groups on the jacket comprises wrapping the prepared plurality of air bag sheets around some jacket horizontal members near water surface.
9. The method according to claim 5, wherein the act of installing the prepared plurality of non-steel buoyancy tank groups on a jacket member comprises connecting a steel ring attached at the each end of an air bag to a wire circulating around the jacket member, wherein the wire circulates around the jacket member through a plurality of padeyes welded at the jacket member surface.
10. The method according to claim 1, wherein the jacket does not employ any conventional ballast tanks inside jacket main leg bottoms.
11. A method for installing a jacket at an offshore installation site, comprising:
preparing a plurality of non-steel buoyancy tank groups, wherein each buoyancy tank group comprises a plurality of air bags; and
installing the prepared plurality of non-steel buoyancy tank groups on the jacket;
injecting air into each of the plurality of non-steel buoyancy tanks to achieve a first predetermined internal air pressure level;
transporting the jacket to the installation site with a transportation apparatus;
removing the jacket from the transportation apparatus, wherein the jacket becomes self afloat maintaining positive reserve buoyancy after removing from the transportation apparatus;
releasing air from each of the plurality of non-steel buoyancy tanks; and
removing the plurality of non-steel buoyancy tanks air bags from the jacket after the jacket installation is complete;
wherein more than 20 percent of the jacket total reserve buoyancy is contributed by attached non-steel air bags.
12. The method according to claim 11 further comprising reinjecting air into one or more air bags to achieve the first predetermined internal air pressure level after arrival at the installation site and before the jacket is off a transportation apparatus; .
13. The method according to claim 11, wherein each of the air bag comprises a middle tubular section having a plurality of rows of side ring pairs longitudinally attached to the sides and two cone sections at each end.
14. The method according to claim 13, wherein the act of preparing a plurality of non-steel buoyancy tank groups comprises:
dividing a plurality of air bags into a plurality of groups, each group comprising two or more air bags; and
forming a sheet of air bags for each group by connecting adjacent air bags within the group laterally.
15. The method according to claim 14, wherein the act of forming a sheet of air bags comprises connecting the plurality of rows of side rings of each air bag with the corresponding plurality of rows of side rings of an adjacent air bag by a plurality of wires.
16. The method according to claim 14, wherein the act of installing the prepared plurality of non-steel buoyancy tank groups on the jacket comprises wrapping the prepared plurality of air bag sheets around the jacket main legs near water surface in a near vertical orientation.
17. The method according to claim 14, wherein the act of installing the prepared plurality of non-steel buoyancy tank groups on the jacket comprises wrapping the prepared plurality of air bag sheets around some jacket horizontal members near water surface.
18. The method according to claim 14, wherein the act of installing the prepared plurality of non-steel buoyancy tank groups on the jacket comprises connecting a steel ring attached at the lower end cone section of an air bag to a wire circulating around a jacket member, wherein the wire circulates around the jacket member through a plurality of padeyes welded at the jacket member surface.
19. The method according to claim 18, wherein the act of removing the plurality of non-steel buoyancy tank air bags from the jacket comprises cutting the connecting wire between each air bag and the wire circulating the jacket member by a ROV.
20. The method according to claim 11, wherein the act of injecting and releasing air from air bags is conducted through a main control center above water surface.
21. The method according to claim 11, wherein the installation site is a deepwater water location with a water depth greater than 60 meters (200 ft).
22. The method according to claim 11, wherein the jacket does not employ any conventional ballast tanks inside jacket main leg bottoms.
23. The method according to claim 11, wherein each of the air bag is made of nature rubber and multiple layers of polyester nets bonded together through a vulcanized process.