1. A method comprising:
receiving an integrated circuit (IC) design layout;
generating a gray map from the IC design layout;
generating an edge map from the IC design layout, wherein the edge map is generated using vertex information from the IC design layout; and
modifying the IC design layout based on the gray map and the edge map.
2. The method of claim 1 wherein:
the IC design layout has a first pixel size; and
the modifying the IC design layout based on the gray map and the edge map includes increasing the first pixel size of the IC design layout to a second pixel size.
3. The method of claim 1 wherein the receiving the IC design layout includes receiving an electron proximity correction (EPC) modified IC design layout.
4. The method of claim 1 further including using the modified IC design layout to write a pattern on a substrate, wherein the pattern corresponds with a pattern of the IC design layout.
5. The method of claim 1 wherein the generating the edge map using vertex information from the IC design layout includes:
generating a vertex map from the IC design layout; and
generating the edge map based on the vertex map.
6. The method of claim 1 wherein generating the vertex information is associated with features of the IC design layout.
7. The method of claim 6 wherein the features of the IC design layout are polygons.
8. A method comprising:
receiving an integrated circuit (IC) design layout;
modifying the IC design layout using an electron proximity correction (EPC) technique;
dithering the EPC modified IC design layout, wherein the dithering includes:
generating a vertex map and a gray map from the EPC modified IC design layout,
generating an edge map based on the vertex map, and
generating a dithered, EPC modified IC design layout based on the gray map and the edge map; and
converting the dithered, EPC modified IC design layout into an electron beam writer format data.
9. The method of claim 8 further comprising writing the electron beam writer format data on a substrate.
10. The method of claim 9, wherein writing the electron beam writer format includes exposing a resist film coated on the substrate to an electron beam, such that a pattern of a layer of an IC is formed in the resist film.
11. The method of claim 8 wherein the EPC modified IC design layout has a first pixel size and the dithered EPC modified IC design layout has a second pixel size that is larger than the first pixel size.
12. The method of claim 8 further comprising flattening the IC design layout before modifying the IC design layout using the EPC technique.
13. The method of claim 12 wherein flattening the IC design layout data includes decomposing the IC design layout into primitive patterns and eliminating any overlap of the primitive patterns.
14. The method of claim 12 further comprising striping the IC design layout before modifying the IC design layout using the EPC technique.
15. The method of claim 14, wherein the striping includes dividing the EPC modified IC design layout into a plurality of sub-fields, and further dividing the sub-fields into a plurality of sub-sub-fields.
16. The method of claim 8, wherein the EPC technique includes a dose correction, a pattern size bias correction, a pattern shape correction, and a background dose equalization correction.
17. A method of pattering a substrate, the method comprising:
depositing a resist film on a substrate;
exposing the resist film deposited on the substrate by an electron beam writer, wherein the electron beam writer uses electron beam format data based on a dithered integrated circuit (IC) design layout that was generated using vertex information; and
developing the exposed resist film to form a resist pattern on the substrate.
18. The method of claim 17, wherein using electron beam format data based on a dithered integrated circuit (IC) design layout that was generated using vertex information includes:
receiving an IC design layout;
generating a gray map from the IC design layout;
generating a vertex map from the IC design layout;
generating an edge map from the vertex map; and
modifying the IC design layout based on the gray map and the edge map.
19. The method of claim 18, wherein the received IC design layout is an electron proximity correction (EPC) modified IC design layout.
20. The method of claim 18, further comprising using electron beam format data based on the dithered integrated circuit (IC) design layout that was generated using vertex information includes increasing a pixel size of the IC design layout, such that the dithered IC design layout has a larger pixel size than the IC design layout.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A high capacity adenoviral expression vector capable of enhancing the expression of a transgene, comprising:
a polynucleotide consisting of base pairs 196 through 1131 of SEQ ID NO: 1; and
the transgene,
wherein the polynucleotide is fused to the 3\u2032 end of the transgene and is not translated into an amino acid sequence.
2. The expression vector of claim 1, further comprising an mCMV promoter.
3. The expression vector of claim 2, wherein the mCMV promoter is operably linked to the transgene and the polynucleotide.
4. A method of enhancing the expression of a transgene, comprising:
providing a high capacity adenoviral expression vector comprising: a polynucleotide consisting of base pairs 196 through 1131 of SEQ ID NO: 1; and the transgene;
introducing the expression vector into a cell; and
maintaining the cell under conditions permitting increased expression of the transgene,
wherein the polynucleotide is fused to the 3\u2032 end of the transgene and is not translated into an amino acid sequence.
5. The method of enhancing the expression of a transgene of claim 4, wherein the cell is maintained in vivo.
6. The method of enhancing the expression of a transgene of claim 4, wherein the cell is maintained in vitro.
7. The method of enhancing the expression of a transgene of claim 4, wherein the expression vector further comprises an mCMV promoter.
8. The method of enhancing the expression of a transgene of claim 7, wherein the mCMV promoter is operably linked to the polynucleotide and the transgene.
9. A pharmaceutical preparation, comprising:
a high capacity adenoviral expression vector capable of enhancing the expression of a transgene, comprising:
a polynucleotide consisting of base pairs 196 through 1131 of SEQ ID NO: 1; and the transgene; and
a pharmaceutically acceptable carrier,
wherein the polynucleotide is fused to the 3\u2032 end of the transgene and is not translated into an amino acid sequence.
10. The pharmaceutical preparation of claim 9, wherein the expression vector further comprises an mCMV promoter.
11. The pharmaceutical preparation of claim 10, wherein the mCMV promoter is operably linked to the polynucleotide and the transgene.
12. A kit for enhanced expression of a transgene, comprising:
a high capacity adenoviral expression vector, comprising: a polynucleotide consisting of base pairs 196 through 1131 of SEQ ID NO: 1; and the transgene;
a pharmaceutically acceptable carrier; and
instructions for use,
wherein the polynucleotide is fused to the 3\u2032 end of the transgene and is not translated into an amino acid sequence.
13. The kit for enhanced expression of a transgene of claim 12, wherein the expression vector further comprises an mCMV promoter.
14. The kit for enhanced expression of a transgene of claim 13, wherein the mCMV promoter is operably linked to the polynucleotide and the transgene.
15. The kit for enhanced expression of a transgene of claim 12, wherein the kit is configured for in vivo expression of the transgene.
16. The kit for enhanced expression of a transgene of claim 12, wherein the kit is configured for in vitro expression of the transgene.