1. A method for double patterning a substrate, the method comprising:
forming a first layer of radiation-sensitive material on a substrate;
developing a first exposure pattern in the first layer of radiation-sensitive material, the first exposure pattern having been exposed via photolithography, wherein developing the first exposure pattern results in a first patterned layer;
positioning the substrate in a processing chamber of a capacitively coupled plasma system;
treating the first patterned layer with a flux of electrons by coupling negative polarity direct current power to an upper electrode of the plasma processing system, the flux of electrons being accelerated from the upper electrode with sufficient energy to pass through a plasma and strike the substrate such that an exposed surface of the first patterned layer changes in physical properties;
forming a second layer of radiation-sensitive material on the substrate; and
developing a second exposure pattern in the second layer of radiation-sensitive material, the second exposure pattern having been exposed via photolithography, wherein developing the second exposure pattern results in a second patterned layer such that the second patterned layer and the first patterned layer form a combined pattern.
2. The method of claim 1, wherein the upper electrode comprises silicon; and
wherein coupling negative polarity direct current power causes sputtering of silicon onto the first patterned layer creating a semi-conformal layer of silicon on the first patterned layer.
3. The method of claim 2, further comprising exposing the semi-conformal layer of silicon to an oxygen-containing environment such that the semi-conformal layer of silicon becomes silicon oxide.
4. The method of claim 1, wherein the plasma is created in the processing chamber from a process gas flowed into the processing chamber.
5. The method of claim 4, wherein the process gas comprises an inert gas and hydrogen or a noble gas and nitrogen.
6. The method of claim 1, wherein developing the first exposure pattern includes using developing chemicals to dissolve and remove the first exposure pattern from the first layer of radiation-sensitive material.
7. The method of claim 1, wherein changes in physical properties includes increased cross-linking of the exposed surface such that the exposed surface of the first patterned layer increases in resistance to developing chemicals.
8. The method of claim 1, wherein the first patterned layer includes a plurality of line structures.
9. The method of claim 1, wherein the first patterned layer includes structures created at a first spacing.
10. The method of claim 1, wherein the first patterned layer is selected from the group consisting of negative tone developer resist, positive tone developer resist, and alcohol-based resist; and
wherein the second patterned layer is selected from the group consisting of negative tone developer resist, positive tone developer resist, and alcohol-based resist.
11. The method of claim 1, wherein the first patterned layer is selected from a negative tone developer resist, and wherein the second patterned layer is selected from a negative tone developer resist.
12. The method of claim 1, wherein the combined pattern includes intersecting features.
13. The method of claim 1, wherein the combined pattern includes intersecting trenches.
14. The method of claim 1, wherein the combined pattern includes trenches defined by the second patterned layer that intersect with trenches defined by the first patterned layer.
15. The method of claim 14, wherein trench intersections define contact holes.
16. The method of claim 15, further comprising transferring defined contact holes to one or more underlying layers.
17. The method of claim 1, further comprising transferring the combined pattern to an underlying layer via an etch operation.
18. A method for double patterning a substrate, the method comprising:
forming a first layer of radiation-sensitive material on a substrate;
developing a first pattern in the first layer of radiation-sensitive material, the first pattern having been exposed via photolithography, wherein developing the first pattern results in a first patterned layer;
treating the first patterned layer with an electron flux formed by coupling negative polarity direct current power to an upper electrode in a plasma processing chamber, such that a protective layer is semi-conformally created on exposed surfaces of the first patterned layer, the electron flux sufficient to increase cross-linking of the first patterned layer;
forming a second layer of radiation-sensitive material on the substrate; and
developing a second pattern in the second layer of radiation-sensitive material, the second pattern having been exposed via photolithography, wherein developing the second pattern results in a second patterned layer having structures created between structures of the first patterned layer.
19. A method for double patterning a substrate, the method comprising:
forming a first layer of radiation-sensitive material on a substrate;
developing a first exposure pattern in the first layer of radiation-sensitive material, the first exposure pattern having been exposed via photolithography, wherein developing the first exposure pattern results in a first patterned layer;
positioning the substrate in a processing chamber of a capacitively coupled plasma system and flowing a process gas into the processing chamber;
creating plasma in the processing chamber above the substrate and applying negative polarity direct current power to an upper electrode of the plasma processing system such that a beam of ballistic electrons strike the substrate, the ballistic electrons originating from the upper electrode;
removing the substrate from the processing chamber and exposing the substrate to an oxygen-containing atmosphere such that a semi-conformal layer of silicon oxide forms on the first patterned layer, the semi-conformal layer of silicon oxide being sufficiently thick such that the first patterned layer is protected from subsequent developing chemicals;
forming a second layer of radiation-sensitive material on the substrate; and
developing a second exposure pattern in the second layer of radiation-sensitive material, the second exposure pattern having been exposed via photolithography, wherein developing the second exposure pattern results in a second patterned layer such that the second patterned layer and the first patterned layer form a combined pattern.
20. The method of claim 19, wherein the first patterned layer is selected from the group consisting of negative tone developer resist, positive tone developer resist, and alcohol-based resist; and
wherein the second patterned layer is selected from the group consisting of negative tone developer resist, positive tone developer resist, and alcohol-based resist.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A band attachment, comprising:
an attachment portion, the attachment portion defining:
a connector bar passage,
a reinforcement pin passage substantially parallel to the connector bar passage, and
at least one reinforcement plate recess intersecting both the connector bar passage and the reinforcement pin passage;
a reinforcement plate, the reinforcement plate:
defining a connector bar aperture and a reinforcement pin aperture, and
being positioned within the reinforcement plate recess such that the connector bar aperture intersects the connector bar passage, and the reinforcement pin aperture intersects the reinforcement pin passage; and
a reinforcement pin positioned within the reinforcement pin passage such that the reinforcement pin extends through the reinforcement pin aperture of the reinforcement plate.
2. The band attachment recited in claim 1,
wherein the attachment portion defines a second reinforcement plate recess intersecting both the connector bar passage and the reinforcement pin passage; and
wherein the band attachment further comprises a second reinforcement plate, the second reinforcement plate:
defining a connector bar aperture and a reinforcement pin aperture, and
being positioned within the second reinforcement plate recess such that the connector bar aperture of the second reinforcement plate intersects the connector bar passage, and the reinforcement pin aperture of the second reinforcement plate intersects the reinforcement pin passage; and
wherein the reinforcement pin is positioned within the reinforcement pin passage such that the reinforcement pin extends through the reinforcement pin aperture of the first reinforcement plate and through the reinforcement pin aperture of the second reinforcement plate.
3. The band attachment recited in claim 2,
wherein the attachment portion further defines at least one connector passage extending between the first reinforcement plate recess and the second reinforcement plate recess; and
wherein the band attachment further comprises at least one connecter extending through connector passage and connecting the first reinforcement plate to the second reinforcement plate.
4. The band attachment recited in claim 1, wherein the reinforcement plate has a primary plane substantially orthogonal to a direction of the reinforcement pin passage.
5. The band attachment recited in claim 1,
wherein:
the attachment portion defines a second reinforcement pin passage substantially parallel to the connector bar passage and intersected by the at least one reinforcement plate recess, and
the reinforcement plate defines a second reinforcement pin aperture intersecting the second reinforcement pin passage; and
wherein the band attachment further comprises a second reinforcement pin positioned within the second reinforcement pin passage such that the second reinforcement pin extends through the second reinforcement pin aperture of the reinforcement plate.
6. The band attachment recited in claim 1, wherein the connector bar passage is defined proximal to a first side of the attachment portion, and the reinforcement pin passage is defined proximal to a second side of the attachment portion opposite the first side.
7. The band attachment recited in claim 1, wherein the attachment portion is formed of a rubber or a plastic material.
8. The band attachment recited in claim 1, wherein the reinforcement plate is formed of metal.
9. A band, comprising:
a first band portion having a first end and a second end;
a second band portion having a first end and a second end;
a first band fastener component attached to the first end of the first band portion;
a second band fastener component attached to the first end of the second band portion, the second band fastener component being complementary to the first band fastener component;
a first band attachment as recited in claim 1 attached to the second end of the first band portion; and
a second band attachment as recited in claim 1 attached to the second end of the second band portion.
10. A method of forming a band attachment, comprising:
obtaining an attachment portion for a band attachment, the attachment portion defining:
a connector bar passage,
a reinforcement pin passage substantially parallel to the connector bar passage, and
at least one reinforcement plate recess intersecting both the connector bar passage and the reinforcement pin passage;
inserting a reinforcement plate into the at least one reinforcement plate recess, the reinforcement plate:
defining a connector bar aperture and a reinforcement pin aperture, and
being positioned within the reinforcement plate recess such that the connector bar aperture intersects the connector bar passage, and the reinforcement pin aperture intersects the reinforcement pin passage; and
inserting a reinforcement pin into the reinforcement pin passage such that the reinforcement pin extends through the reinforcement pin aperture of the reinforcement plate.