1. A rotary switch assembly comprising:
a rotary switch having an input and a rotatable contact that can be rotated to multiple contact positions; and
a pulser having an input for coupling to at least a send electrode of a momentary push-button switch matrix and an output coupled to the input of the rotary switch and generating an output signal similar to that of a momentary push-button in a momentary push-button switch matrix.
2. The rotary switch assembly of claim 1, wherein there are multiple pulsers, and each of the pulsers has an input for connecting to a different send electrode of a momentary push-button switch matrix.
3. The rotary switch assembly of claim 2, wherein the input of the rotary switch comprises multiple poles and each of the pulsers is coupled to a different pole.
4. The rotary switch assembly of claim 2, wherein each of the pulsers generates a unique output signal.
5. The rotary switch assembly of claim 1, wherein the pulser is a monostable multivibrator.
6. The control panel of claim 1, wherein the rotary switch has detent positions that correspond to the multiple contact positions.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A processing system, comprising:
an electrostatic chuck for holding a workpiece, the workpiece comprising a semiconductor substrate attached to an electrically insulating carrier, wherein, when the electrostatic chuck holds the workpiece, the electrically insulating carrier of the workpiece is disposed between the electrostatic chuck and the semiconductor substrate of the workpiece;
an AC power supply electrically coupled to the electrostatic chuck;
wherein the workpiece is held against the electrostatic chuck by an electrostatic force generated by a voltage supplied to the electrostatic chuck;
wherein the supplied voltage is dependent on at least one property of the electrically insulating carrier.
2. The system of claim 1, wherein the AC power supply provides a voltage of at least 500 V peak to peak.
3. The system of claim 1, wherein the at least one property of the electrically insulating carrier comprises thickness of the electrically insulating carrier.
4. The system of claim 3, wherein the thickness comprises at least 0.2 mm.
5. The system of claim 1, wherein the at least one property of the electrically insulating carrier comprises the material used to form the electrically insulating carrier.
6. The system of claim 1, wherein the supplied voltage is further dependent on the weight of the semiconductor substrate and electrically insulating carrier.
7. The system of claim 1, further comprising a processing tool.
8. The system of claim 7, wherein the processing tool is an implant device.
9. The system of claim 1, wherein the AC power supply is a 6-phase high voltage AC power supply.
10. The system of claim 1, wherein the supplied voltage is at least 3 kV peak to peak.
11. A processing system, comprising:
an electrostatic chuck for holding a workpiece, the workpiece comprising a semiconductor substrate attached to an electrically insulating carrier, wherein, when the electrostatic chuck holds the workpiece, the electrically insulating carrier of the workpiece is disposed between the electrostatic chuck and the semiconductor substrate of the workpiece;
an AC power supply electrically coupled to the electrostatic chuck wherein the AC power supply provides a voltage of at least 500 V peak to peak;
wherein the workpiece is held against the electrostatic chuck by an electrostatic force generated by the provided voltage.
12. The processing system of claim 11, wherein the supplied voltage is at least 1 kV peak to peak.
13. The system of claim 11, wherein the supplied voltage is dependent on a thickness of the electrically insulating carrier.
14. The system of claim 11, wherein a thickness of the semiconductor substrate is less than or equal to 200 \u03bcm.
15. The system of claim 11, wherein a thickness of the semiconductor substrate is less than or equal to 100 \u03bcm.
16. The system of claim 11, wherein the supplied voltage is dependent on a material used to form the electrically insulating carrier.
17. The system of claim 13, wherein the supplied voltage is further dependent on the weight of the semiconductor substrate and electrically insulating carrier.
18. The system of claim 11, further comprising a processing tool.
19. The system of claim 18, wherein the processing tool is an implant device.
20. The system of claim 11, wherein the AC power supply is a 6-phase high voltage AC power supply.
21. The system of claim 11, wherein the supplied voltage is at least 3 kV peak to peak.
22. A method of manufacturing a device, the method comprising:
providing a semiconductor substrate;
attaching the semiconductor substrate to an electrically insulating carrier, thereby forming a workpiece;
supporting the workpiece, which comprises the semiconductor substrate and the electrically insulating carrier, with an electrostatic chuck, the electrically insulating carrier of the workpiece being disposed between the electrostatic chuck and the semiconductor substrate of the workpiece;
wherein the workpiece is held against the electrostatic chuck by an electrostatic force generated by a voltage supplied to the electrostatic chuck;
wherein a voltage supplied to the electrostatic chuck is related to at least one property of the electrically insulating carrier of the workpiece.
23. The method of claim 22, wherein attaching the semiconductor substrate to the electrically insulating carrier comprises attaching the semiconductor substrate such that a front side of the semiconductor substrate faces the electrically insulating carrier.
24. The method of claim 22, wherein the at least one property is a thickness of the electrically insulating carrier.
25. The method of claim 22, wherein the at least one property is the material used to form the electrically insulating carrier.
26. The method of claim 22, wherein the voltage supplied to the electrostatic chuck is a high voltage.
27. The method of claim 26, wherein the high voltage is at least 500 V peak to peak.
28. The method of claim 26, wherein the high voltage ranges from 6-8 kV peak to peak.
29. The method of claim 22, wherein the electrically insulating carrier further comprises a conductive layer.
30. The method of claim 29, wherein the conductive layer is optically transmissive.
31. The method of claim 22, wherein the semiconductor substrate is a 300 mm substrate.
32. The method of claim 22, further comprising implanting the substrate.
33. The method of claim 32, wherein the implanting is done according to a Quad implant process.
34. The method of claim 32, wherein the implant process is a backside implant process.