1. A liquid crystal display comprising:
a substrate;
a first signal line assembly formed over the substrate, wherein the first signal line assembly comprises a first signal line, a first pad connected to the first signal line, a gate electrode connected to the first signal line, and a conductive electrode;
a first nitrogen containing layer formed on the first signal line, the first pad, the gate electrode and the conductive electrode of the first signal line assembly to reduce formation of a high resistance oxide layer on the first signal line assembly;
a second signal line assembly formed with a lower layer and an upper layer comprising a second signal line intersecting and insulated from the first signal line, a second pad, a source electrode, a drain electrode and a conductive pattern;
a second nitrogen containing layer formed on the second signal line, the second pad, the source electrode, the drain electrode and the conductive pattern of the second signal line assembly, wherein the second nitrogen containing layer reduces formation of a high resistance oxide layer on the second signal line assembly;
a protective layer formed over the second signal line assembly;
a first contact hole formed in the protective layer exposing the drain electrode; and
a pixel electrode formed over the protective layer, the pixel electrode being electrically connected to the drain electrode through the first contact hole,
wherein the first and second nitrogen containing layers comprise one of an aluminum nitride layer, an aluminum alloy nitride layer, and an aluminumneodymium alloy nitride layer.
2. The liquid crystal display of claim 1, wherein the pixel electrode is formed of indium zinc oxide.
3. A liquid crystal display comprising:
a substrate;
a first signal line assembly formed over the substrate, wherein the first signal line assembly comprises a first signal line, a first pad connected to the first signal line, a gate electrode connected to the first signal line, and a conductive electrode;
a first nitrogen containing layer formed on the first signal line, the first pad, the gate electrode and the conductive electrode of the first signal line assembly to reduce formation of a high resistance oxide layer on the first signal line assembly;
a second signal line assembly formed with a lower layer and an upper layer comprising a second signal tine intersecting and insulated from the first signal tine, a second pad, a source electrode, a drain electrode and a conductive pattern;
a second nitrogen containing layer formed on the second signal line, the second pad, the source electrode, the drain electrode and the conductive pattern of the second signal line assembly, wherein the second nitrogen containing layer reduces formation of a high resistance oxide layer on the second signal line assembly; and
a pixel electrode formed over a protective layer, the pixel electrode being electrically connected to the second signal line assembly,
wherein the first and second nitrogen containing layers comprise one of an aluminum nitride layer, an aluminum alloy nitride layer, and an aluminumneodymium alloy nitride layer.
4. The liquid crystal display of claim 1, further comprising:
a second contact hole formed in the protective layer exposing the first pad; and
a third contact hole formed in the protective layer exposing the second pad;
wherein the first pad is electrically connected to a third pad through the second contact hole and the second pad is electrically connected to a fourth pad through the third contact hole.
5. A thin film transistor array panel, comprising:
a substrate;
a gate line assembly formed on the substrate, the gate line assembly including a gate line, gate pad, gate electrode and conductive electrode;
a first low resistance conductive layer formed on the gate line, gate pad, gate electrode and conductive electrode;
a gate insulating layer formed on the first low resistance conductive layer and the substrate;
a semiconductor pattern formed on the gate insulating layer;
an ohmic contact pattern formed on the semiconductor pattern;
a data line assembly formed on the ohmic contact pattern, the data line assembly including a data line, data pad, source electrode, drain electrode and conductive pattern;
a second low resistance conductive layer formed on the data line, data pad, source electrode, drain electrode and conductive pattern;
a protective layer formed on the second low resistance conductive layer and the gate insulating layer, the protective layer having a first contact hole exposing a portion of the second low resistance conductive layer on the conductive pattern and a second contact hole exposing a portion of the second low resistance conductive layer on the drain electrode; and
a pixel electrode formed on the protective layer, the pixel electrode electrically connected to the drain electrode through the second contact hole and the conductive pattern through the first contact hole.
6. A thin film transistor array panel, comprising:
a substrate;
a gate line assembly formed on the substrate, the gate line assembly including a gate pad, a gate electrode, a gate line and a conductive electrode;
a first low resistance conductive layer including aluminum nitride, aluminum alloy nitride or aluminumneodymium alloy nitride being formed on the gate pad, the gate electrode, the gate line and the conductive electrode;
a gate insulating layer formed on the first low resistance conductive layer and the substrate;
a data line assembly formed on the gate insulating layer, the data line assembly including a data line, a data pad, a source electrode, a drain electrode and a conductive pattern;
a protective layer formed on the data line assembly and the gate insulating layer, the protective layer having a first contact hole exposing the drain electrode; and
a pixel electrode formed on the protective layer, the pixel electrode being electrically connected to the drain electrode through the first contact hole.
7. The thin film transistor array panel of claim 6, further comprising:
a second low resistance conductive layer including aluminum nitride, aluminum alloy nitride or aluminumneodymium alloy nitride being formed on the data line, the data pad, the source electrode, the drain electrode and the conductive pattern.
8. The thin film transistor array panel of claim 7, wherein the first contact hole is formed over the second low resistance conductive layer formed on the drain electrode, and wherein the second low resistance conductive layer formed on the drain electrode reduces a contact resistance between the drain electrode and the pixel electrode connected thereto.
9. The thin film transistor array panel of claim 8, wherein the protective layer further comprises a second contact hole formed over the gate pad and a third contact hole formed over the data pad,
wherein a subsidiary gate pad is connected to the gate pad through the second contact hole and a subsidiary data pad is connected to the data pad through the third contact hole, and
wherein the first low resistance conductive layer reduces a contact resistance between the subsidiary gate pad and the gate pad and the second low resistance conductive layer reduces a contact resistance between the subsidiary data pad and the data pad.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A polishing method comprising:
rotating a workpiece;
rotating a polishing table having a polishing surface thereon;
pressing the workpiece against the polishing surface on the polishing table rotated at a first rotational speed to polish the workpiece;
separating the workpiece from the polishing surface after said pressing; and
before said separating, reducing a rotational speed of the polishing table to a second rotational speed lower than the first rotational speed to provide a difference between a rotational speed of the workpiece and the rotational speed of the polishing table.
2. The polishing method as recited in claim 1, wherein said reducing is performed during said pressing.
3. The polishing method as recited in claim 1, further comprising:
supplying a polishing liquid to the polishing surface at a first flow rate during said pressing; and
before or during said separating, increasing a flow rate of the polishing liquid to a second flow rate higher than the first flow rate.
4. The polishing method as recited in claim 1, further comprising ejecting a mixture of gas and pure water or chemical liquid to the polishing surface to clean the polishing surface before said separating.
5. The polishing method as recited in claim 1, wherein said separating comprises lifting the workpiece from the polishing surface.
6. The polishing method as recited in claim 5, wherein said lifting comprises reducing a lifting speed of the workpiece until the workpiece has substantially been separated from the polishing surface.
7. A polishing method comprising:
moving a workpiece and a polishing surface relative to each other;
pressing the workpiece against the polishing surface moved at a first frequency to polish the workpiece;
separating the workpiece from the polishing surface after said pressing; and
before said separating, reducing a frequency of movement of the polishing surface to a second frequency lower than the first frequency.
8. The polishing method as recited in claim 7, wherein said moving comprising moving the workpiece and the polishing surface with an orbital movement.
9. A polishing method comprising:
moving a polishing surface relative to a workpiece;
pressing the workpiece against the polishing surface moved at a first speed to polish the workpiece;
separating the workpiece from the polishing surface after said pressing; and
before said separating, reducing a speed of movement of the polishing surface to a second speed smaller than the first speed.
10. The polishing method as recited in claim 9, wherein said moving comprising linearly moving the polishing surface.
11. A polishing method comprising:
rotating a workpiece;
rotating a polishing table having a polishing surface thereon;
pressing the workpiece against the polishing surface on the polishing table;
separating the workpiece from the polishing surface after said pressing; and
before said separating, reducing a ratio of a rotational speed of the top ring to a rotational speed of the poslishing table.
12. The polishing method as recited in claim 11, wherein said reducing is performed during said pressing.
13. The polishing method as recited in claim 11, further comprising:
supplying a polishing liquid to the polishing surface at a first flow rate during said pressing; and
before or during said separating, increasing a flow rate of the polishing liquid to a second flow rate higher than the first flow rate.
14. The polishing method as recited in claim 11, further comprising ejecting a mixture of gas and pure water or chemical liquid to the polishing surface to clean the polishing surface before said separating.
15. The polishing method as recited in claim 11, wherein said separating comprises lifting the workpiece from the polishing surface.
16. The polishing method as recited in claim 15, wherein said lifting comprises reducing a lifting speed of the workpiece until the workpiece has substantially been separated from the polishing surface.