1. An electrically programmable memory element, comprising:
a programmable resistance material;
a conductive material; and
an additional material between said programmable resistance material and said conductive material, said additional material comprising titanium and nitrogen, wherein the atomic percent said titanium is at least 5% greater than the atomic percent of said nitrogen.
2. The memory element of claim 1, wherein the atomic percent of said titanium is at least 15% greater than the atomic percent of said nitrogen.
3. The memory element of claim 1, wherein the atomic percent of said titanium is at least 25% greater than the atomic percent of said nitrogen.
4. The memory element of claim 1, wherein said additional material consists essentially of said titanium and nitrogen.
5. The memory element of claim 1, wherein said additional material is a titanium nitride.
6. The memory element of claim 1, wherein said programmable resistance material is a phase-change material.
7. The memory element of claim 1, wherein said programmable resistance material comprises at least one chalcogen element.
8. The memory element of claim 1, wherein said additional material is in direct contact with said programmable resistance material.
9. The memory element of claim 8, wherein said additional material is in direct contact with said conductive material.
10. An electrical device, comprising:
a chalcogenide material;
a dielectric material; and
an additional material between said chalcogenide material and said dielectric material, said additional material comprising titanium and nitrogen, wherein the atomic percent said titanium is at least 5% greater than the atomic percent of said nitrogen.
11. The device of claim 10, wherein the atomic percent of said titanium is at least 15% greater than the atomic percent of said nitrogen.
12. The device of claim 10, wherein the atomic percent of said titanium is at least 25% greater than the atomic percent of said nitrogen.
13. The device of claim 10, wherein said additional material consists essentially of said titanium and nitrogen.
14. The device of claim 10, wherein said additional material is a titanium nitride.
15. The device of claim 10, wherein said additional material is in direct contact with said chalcogenide material.
16. The device of claim 15, wherein said additional material is in direct contact with said dielectric material.
17. An electrical device, comprising:
a chalcogenide material; and
an additional material in direct contact with said chalcogenide material, said additional material comprising titanium and nitrogen, wherein the atomic percent said titanium is at least 5% greater than the atomic percent of said nitrogen.
18. The device of claim 17, wherein the atomic percent of said titanium is at least 15% greater than the atomic percent of said nitrogen.
19. The device of claim 17, wherein the atomic percent of said titanium is at least 25% greater than the atomic percent of said nitrogen.
20. The device of claim 17, wherein said additional material consists essentially of said titanium and nitrogen.
21. The device of claim 17, wherein said additional material is a titanium nitride.
22. An electrically programmable memory element, comprising:
a programmable resistance material;
a dielectric material; and
an additional material between said programmable resistance material and said dielectric material, said additional material comprising titanium and nitrogen, wherein the atomic percent said titanium is at least 5% greater than the atomic percent of said nitrogen.
23. The memory element of claim 22, wherein the atomic percent of said titanium is at least 15% greater than the atomic percent of said nitrogen.
24. The memory element of claim 22, wherein the atomic percent of said titanium is at least 25% greater than the atomic percent of said nitrogen.
25. The memory element of claim 22, wherein said additional material consists essentially of said titanium and nitrogen.
26. The memory element of claim 22, wherein said additional material is a titanium nitride.
27. The memory element of claim 22, wherein said programmable resistance material is a phase-change material.
28. The memory element of claim 22, wherein said additional material is in direct contact with said programmable resistance material.
29. The memory element of claim 22, wherein said additional material is in direct contact with said dielectric material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A foldable host unit case of a computer with sliding rail grooves, which is reduced volume thereof effectively while packaging, comprising:
a first frame providing two sliding rail grooves at the rear end thereof;
a second frame being disposed opposite to the first frame and providing another two sliding rail grooves at the front end thereof;
a front wall providing a first lateral end to pivotally connect with the first frame with pivotal shafts and a second lateral end being movably joined to the sliding rail grooves of the second frame with sliding blocks; and
a rear wall providing a first lateral end being movably joined to the sliding rail grooves of the first frame with further sliding blocks and a second lateral end pivotally connecting with the second frame with further pivotal shafts;
wherein the first frame has a frame edge bending inward at the upper and lower sides thereof respectively; the front end of the first frame has an upper vertical plate, a horizontal connecting plate and a lower vertical plate; the lower end of the upper vertical plate and the upper end of the lower vertical plate are connected to the inner end and the outer end of the horizontal connecting plate respectively; the sliding rail grooves are disposed at the frame edges respectively;
wherein the second frame has a frame edge bending inward at the upper and lower sides thereof; the front end of the second frame has an upper vertical plate, a horizontal connecting plate and a lower vertical plate; the lower end of the upper vertical plate and the upper end of the lower vertical plate are connected to the outer end and the inner end of the horizontal connecting plate respectively; the sliding rail groove of the second frame are disposed at the lower side of the frame edge of the second frame and at the horizontal connecting plate respectively;
whereby the first frame, the second frame, the front wall and the rear wall are capable of being unfolded to form the host unit case completely and being folded to reduce the volume of host unit case as a packaged size.
2. The foldable host unit case of a computer with sliding rail grooves as defined in claim 1, further comprises a first support member with a front end pivotally connecting with the front wall with a pivotal shaft and a rear end pivotally connecting with an end of a connecting rod with a pivotal shaft; another end of the connecting rod pivotally connects with the first frame with a pivotal shaft for a first type electronic device being disposed between the upper vertical plate of the first frame and the upper vertical plate of the second frame and a second type electronic device being disposed between the lower vertical plate of the second frame and the first support member.
3. The foldable host unit case of a computer with sliding rail grooves as defined in claim 2 further comprises a left side plate joined to the outer side of the first frame.
4. The foldable host unit case of a computer with sliding rail grooves as defined in claim 3 further comprises a right side plate joined to the outer side of the second frame.
5. The foldable host unit case of a computer with sliding rail grooves as defined in claim 4 further comprises an upper cover and a lower cover; the upper cover is joined to the upper sides of the first frame and the second frame respectively; the lower cover is joined to the lower sides of the first frame and the second frame respectively.
6. The foldable host unit case of a computer with sliding rail grooves as defined in claim 5 further comprises a front panel joined to the front ends of the first and second frames respectively.