1. A method for manufacturing a semiconductor device, comprising the steps of:
containing a substrate in a cassette in a chamber on an auto-guided vehicle,
transferring the substrate to a manufacturing system from the auto-guided vehicle, and
performing a manufacturing process to the substrate in the manufacturing system,
wherein the chamber comprises a first filter, a second filter, a shutter, and a pump,
wherein the substrate and the cassette in the chamber are isolated from outside of the chamber,
wherein an air intake is located above the chamber,
wherein an exhaust outlet is located below the chamber,
wherein downflow air introduced in the chamber through the first filter is pumped out through the second filter, and
wherein contamination from the substrate is trapped by the second filter.
2. A method for manufacturing a semiconductor device, comprising the steps of:
containing a substrate in a cassette in a chamber on an auto-guided vehicle,
transferring the substrate to a carrier station from the auto-guided vehicle,
transferring the substrate to a manufacturing system from the carrier station, and
performing a manufacturing process to the substrate in the manufacturing system,
wherein the chamber comprises a first filter, a second filter, a shutter, and a pump,
wherein the substrate and the cassette in the chamber are isolated from outside of the chamber,
wherein an air intake is located above the chamber,
wherein an exhaust outlet is located below the chamber,
wherein downflow air introduced in the chamber through the first filter is pumped out through the second filter, and
wherein contamination from the substrate is trapped by the second filter.
3. A method for manufacturing a semiconductor device, comprising the steps of:
containing a substrate in a cassette in a chamber on an auto-guided vehicle,
transferring the substrate to a manufacturing system from the auto-guided vehicle, and
performing a doping process to the substrate in the manufacturing system,
wherein the chamber comprises a first filter, a second filter, a shutter, and a pump,
wherein the substrate and the cassette in the chamber are isolated from outside of the chamber,
wherein an air intake is located above the chamber,
wherein an exhaust outlet is located below the chamber,
wherein downflow air introduced in the chamber through the first filter is pumped out through the second filter, and
wherein contamination from the substrate is trapped by the second filter.
4. A method for manufacturing a semiconductor device, comprising the steps of:
performing a first manufacturing process of the semiconductor device to a substrate,
containing the substrate in a cassette in a chamber on an auto-guided vehicle after performing the first manufacturing process of the semiconductor device,
transferring the substrate to a manufacturing system from the auto-guided vehicle, and
performing a second manufacturing process of the semiconductor device to the substrate,
wherein the chamber comprises a first filter, a second filter, a shutter, and a pump,
wherein the substrate and the cassette in the chamber are isolated from outside of the chamber.
wherein an air intake is located above the chamber,
wherein an exhaust outlet is located below the chamber,
wherein downflow air introduced in the chamber through the first filter is pumped out through the second filter, and
wherein contamination from the substrate is trapped by the second filter.
5. A method for manufacturing a semiconductor device according to claim 1, wherein each of the first and second filters is one of an ULPA filter and a HEPA filter.
6. A method for manufacturing a semiconductor device according to claim 2, wherein each of the first and second filters is one of an ULPA filter and a HEPA filter.
7. A method for manufacturing a semiconductor device according to claim 3, wherein each of the first and second filters is one of an ULPA filter and a HEPA filter.
8. A method for manufacturing a semiconductor device according to claim 4, wherein each of the first and second filters is one of an ULPA filter and a HEPA filter.
9. A method for manufacturing a semiconductor device according to claim 1, wherein the second filter is a filter including cation exchange fiber that is ion exchange fiber as a filter medium.
10. A method for manufacturing a semiconductor device according to claim 2, wherein the second filter is a filter including cation exchange fiber that is ion exchange fiber as a filter medium.
11. A method for manufacturing a semiconductor device according to claim 3, wherein the second filter is a filter including cation exchange fiber that is ion exchange fiber as a filter medium.
12. A method for manufacturing a semiconductor device according to claim 4, wherein the second filter is a filter including cation exchange fiber that is ion exchange fiber as a filter medium.
13. A method for manufacturing a semiconductor device according to claim 1, wherein the first filter is provided above the second filter.
14. A method for manufacturing a semiconductor device according to claim 2, wherein the first filter is provided above the second filter.
15. A method for manufacturing a semiconductor device according to claim 3, wherein the first filter is provided above the second filter.
16. A method for manufacturing a semiconductor device according to claim 4, wherein the first filter is provided above the second filter.
17. A method for manufacturing a semiconductor device according to claim 1, wherein the first filter is provided in a top surface of the vehicle body.
18. A method for manufacturing a semiconductor device according to claim 2, wherein the first filter is provided in a top surface of the vehicle body.
19. A method for manufacturing a semiconductor device according to claim 3, wherein the first filter is provided in a top surface of the vehicle body.
20. A method for manufacturing a semiconductor device according to claim 4, wherein the first filter is provided in a top surface of the vehicle body.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for acquiring and evaluating geometry of a well comprising:
a. deploying at least one grid of geophysical sensors, wherein the at least one grid of the sensors is deployed in a 2D or 3D configuration;
b. acquiring a baseline geophysical survey of geophysical parameters of the well;
c. fracturing the well to create a fracture;
d. injecting an electrically active proppant into the fracture, wherein the electrically active proppant is characterized by self-potential upon contact with an activating subterranean fluid;
e. introducing an activating subterranean fluid into the fracture to activate the self-potential of the electrically active proppant;
f. continuously acquiring a geophysical survey of the self-potential of the electrically active proppant during the fracturing; and
g. acquiring a final geophysical survey of geophysical parameters of the fracture upon completion of the fracturing.
2. The method according to claim 1, wherein the at least one grid of sensors is connected to seismic survey equipment.
3. The method according to claim 2, wherein the seismic survey equipment includes a seismic interface box and a seismic data recorder.
4. The method according to claim 1, wherein the electrically active proppant is a suitable proppant for stimulating data desired to be collected.
5. The method according to claim 1, wherein the proppant material injected has particular geophysical parameters to be measured that includes electric, electromagnetic properties, resistivity, or gravitimetric magnetic properties.