1. An intraluminal device, suitable for implantation in a body, which device is provided with a coating, wherein the coating comprises:
50-97% heparan sulfate;
1-20% laminin; and
0.2-15% type IV collagen.
2. The intraluminal device according to claim 1, wherein the coating comprises:
75-95% heparan sulfate;
3-10% laminin; and
0.5-10% type IV collagen.
3. The intraluminal device according to claim 1, wherein the coating further comprises a growth factor.
4. The intraluminal device according to claim 3, wherein the growth factor is selected from the group consisting of bFGF, IGF, TGF-\u03b2 and VEGF.
5. An intraluminal device, suitable for implantation in a body, the device being provided with a coating that comprises:
50-97% heparan sulfate;
1-20% laminin;
0.2-15% type IV collagen; and
an antibiotic.
6. An intraluminal device, suitable for implantation in a body, the device being provided with a coating that comprises:
50-97% heparan sulfate;
1-20% laminin;
0.2-15% type IV collagen; and
an antibiotic comprising gentamycine.
7. The intraluminal device according to claim 1, wherein the coating further comprises vitronectine.
8. The intraluminal device according to claim 1, wherein the coating comprises:
85-95% heparan sulfate;
5-6% laminin;
3-4% type IV collagen;
0.5-1.5% entactin and nidogen;
0.001-1% growth factors; and
0.001-1% antibiotic.
9. The intraluminal device according to claim 1, wherein the intraluminal device is a prosthesis that comprises a stent or a graft.
10. A coating suitable for the intraluminal device according to claim 1.
11. A method for preparing an intraluminal device, comprising the steps of:
providing an intraluminal device for implantation in a body;
preparing a composition, comprising, in about 50 mgml solvent:
50-97% heparan sulfate;
1-20% laminin;
0.2-15% type IV collagen; and
the solvent being a suitable buffer or water;
dipping the intraluminal device in the composition; and
drying the dipped intraluminal device.
12. The method according to claim 11, wherein the composition further comprises entactin and nidogen.
13. The method according to claim 11, wherein the composition further comprises a growth factor, selected from the group consisting of bFGF, IGF, TGF-\u03b2 and VEGF.
14. The method according to claim 11, wherein the composition further comprises an antibiotic.
15. The method according to claim 11, wherein the composition further comprises vitronectin.
16. The method according to claim 11, wherein the composition comprises:
85-95% heparan sulfate;
5-6% laminin;
3-4% type IV collagen;
0.5-1.5% entactin and nidogen;
0.001-1% growth factors; and
0.001-1% antibiotic.
17. The intraluminal device according to claim 1, wherein the coating further comprises entactin and nidogen.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A power supply device for an electric discharge machining apparatus, the power supply device comprising:
a series circuit that includes a DC power supply and switching elements for supplying DC or AC current pulses to a machining gap between a machining electrode and a workpiece; and
a control unit that controls the switching elements, wherein
when the control unit repeatedly generates a current pulse having a triangular waveform by an inductance component that is present in the series circuit, the control unit controls the switching elements in order that a current-pulse time ratio that is a ratio between a non-current time, during which no current flows through the machining gap, and a current continuation time, during which current flows through the machining gap, in the current pulse is equal to or lower than 15, and
one triangular waveform is formed during the current continuation time, and the non-current time comes after the current continuation time for each current pulse.
2. The power supply device for an electric discharge machining apparatus according to claim 1, wherein the control unit controls the switching elements in order that the current-pulse time ratio is equal to or lower than 110.
3. The power supply device for an electric discharge machining apparatus according to claim 1, wherein the control unit controls the switching elements in order that a pulse width of the current pulse is set within a range of 0.3 to 10.0 \u03bcsec.
4. The power supply device for an electric discharge machining apparatus according to claim 1, wherein the control unit controls the switching elements in order that a peak value of the current pulse is set within a range of 15 to 150 amperes.
5. The power supply device for an electric discharge machining apparatus according to claim 1, wherein the switching elements included in the series circuit are switching elements formed from a wide bandgap semiconductor.
6. The power supply device for an electric discharge machining apparatus according to claim 5, wherein the wide bandgap semiconductor is a semiconductor using silicon carbide, a gallium nitride-based material, or diamond.
7. An electric discharge machining method, wherein
a series circuit that includes a DC power supply and switching elements for supplying DC or AC current pulses to a machining gap between a machining electrode and a workpiece is included, and
a current pulse formed into a triangular waveform by an inductance component that is present in the series circuit is intermittently and repeatedly supplied to the machining gap, thereby machining the workpiece, wherein
the switching elements are controlled in order that a current-pulse time ratio that is a ratio between a non-current time, during which no current flows through the machining gap, and a current continuation time, during which current flows through the machining gap, in the current pulse is equal to or lower than 15, and also equal to or higher than 110, and
one triangular waveform is formed during the current continuation time, and the non-current time comes after the current continuation time for each current pulse.
8. An electric discharge machining method, wherein
a series circuit that includes a DC power supply and switching elements for supplying DC or AC current pulses to a machining gap between a machining electrode and a workpiece is included, and
a current pulse formed into a triangular waveform by an inductance component that is present in the series circuit is intermittently and repeatedly supplied to the machining gap, thereby machining the workpiece, wherein
the switching elements are controlled in order that a current-pulse time ratio that is a ratio between a non-current time, during which no current flows through the machining gap, and a current continuation time, during which current flows through the machining gap, in the current pulse is equal to or lower than 110, and
one triangular waveform is formed during the current continuation time, and the non-current time comes after the current continuation time for each current pulse.
9. An electric discharge machining method, wherein
a series circuit that includes a DC power supply and switching elements for supplying DC or AC current pulses to a machining gap between a machining electrode and a workpiece is included, and
a current pulse formed into a triangular waveform by an inductance component that is present in the series circuit is intermittently and repeatedly supplied to the machining gap, thereby machining the workpiece, wherein
the switching elements are controlled in order that a current-pulse time ratio that is a ratio between a non-current time, during which no current flows through the machining gap, and a current continuation time, during which current flows through the machining gap, in the current pulse is 15 or a value around 15, and
one triangular waveform is formed during the current continuation time, and the non-current time comes after the current continuation time for each current pulse.