1. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, comprising topically administering to said individual an effective amount of a pharmaceutical composition which consists essentially of: (a) 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof; (b) one or more ingredients selected from the group consisting of carbomer 940, carbomer 934, propylene glycol, perhydrosqualene, cyclomethicone, PEG-20 methyl glucose sesquistearate and methyl glucose sesquistearate; (c) water; and, (d) optionally, one or more additives selected from the group consisting of wetting agents, pH regulators, osmotic pressure modifiers, emulsifiers, UV-A and UV-B screening agents and antioxidants; said composition being a gel or a cream.
2. The method according to claim 1, wherein said individual is afflicted with common acne.
3. The method according to claim 2, wherein the common acne is of moderate to moderately severe intensity.
4. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, comprising topically administering to said individual an effective amount of a pharmaceutical composition which is a gel consisting essentially of 0.3% by weight of adapalene, carbomer 940, disodium edentate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
5. The method according to claim 4, wherein said individual is afflicted with common acne.
6. A regime or regimen for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of treatment, comprising topically administering to such individual an effective amount of a pharmaceutical composition which consists essentially of: 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof; one or more ingredients selected from the group consisting of carbomer 940, carbomer 934, propylene glycol, perhydrosqualene, cyclomethicone, PEG-20 methyl glucose sesquistearate, methyl glucose sesquistearate, water, alcohol and polyethylene glycol; and optionally, one or more additives selected from the group consisting of wetting agents, flavor enhancers, preservatives, stabilizers, moisture regulators, pH regulators, osmotic pressure modifiers, emulsifiers, UV-A and UV-B screening agents and antioxidants.
7. The regime or regimen according to claim 6, wherein said individual is afflicted with common acne.
8. The regime or regimen according to claim 7, wherein the common acne is of moderate to moderately severe intensity.
9. The regime or regimen according to claim 6, wherein the composition is a gel.
10. The regime or regimen according to claim 8, wherein the composition is a gel.
11. The regime or regimen according to claim 8, wherein the composition is a gel.
12. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, consisting essentially of topically administering to said individual an effective amount of a pharmaceutical composition which consists essentially of: (a) 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof; (b) one or more ingredients selected from the group consisting of carbomer 940, carbomer 934, propylene glycol, perhydrosqualene, cyclomethicone, PEG-20 methyl glucose sesquistearate and methyl glucose sesquistearate; (c) water; and, (d) optionally, one or more additives selected from the group consisting of wetting agents, pH regulators, osmotic pressure modifiers, emulsifiers, UV-A and UV-B screening agents and antioxidants; said composition being a gel or a cream.
13. The method according to claim 12, wherein said individual is afflicted with common acne.
14. The method according to claim 13, wherein the common acne is of moderate to moderately severe intensity.
15. The method according to claim 12, wherein the composition is a gel consisting essentially of adapalene, carbomer 940, disodium edetate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
16. The method according to claim 15, wherein said individual is afflicted with common acne.
17. A regime or regimen for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of treatment, consisting essentially of topically administering to such individual an effective amount of a pharmaceutical composition which consists essentially of: 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof; one or more ingredients selected from the group consisting of carbomer 940, carbomer 934, propylene glycol, perhydrosqualene, cyclomethicone, PEG-20 methyl glucose sesquistearate, methyl glucose sesquistearate, water, alcohol and polyethylene glycol; and optionally, one or more additives selected from the group consisting of wetting agents, flavor enhancers, preservatives, stabilizers, moisture regulators, pH regulators, osmotic pressure modifiers, emulsifiers, UV-A and UV-B screening agents and antioxidants.
18. The regime or regimen according to claim 17, wherein said individual is afflicted with common acne.
19. The regime or regimen according to claim 18, wherein the common acne is of moderate to moderately severe intensity.
20. The regime or regimen according to claim 17, wherein the composition is a gel.
21. The regime or regimen according to claim 18, wherein the composition is a gel.
22. The regime or regimen according to claim 19, wherein the composition is a gel.
23. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, comprising topically administering to said individual an effective amount of a pharmaceutical composition which comprises 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof, as the sole active anti-acne agent, formulated into a pharmaceutically acceptable medium therefor, said composition being a gel or a cream.
24. The method according to claim 23, wherein said individual is afflicted with common acne.
25. The method according to claim 23, wherein the common acne is of moderate to moderately severe intensity.
26. The method according to claim 23, wherein the composition is a gel comprising adapalene, carbomer 940, disodium edetate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
27. The method according to claim 24, wherein the composition is a gel comprising adapalene, carbomer 940, disodium edentate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
28. A regime or regimen for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of treatment, comprising topically administering to such individual an effective amount of a pharmaceutical composition which comprises 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof, as the sole active anti-acne agent, formulated into a pharmaceutically acceptable medium therefor.
29. The regime or regimen according to claim 28, wherein said individual is afflicted with common acne.
30. The regime or regimen according to claim 29, wherein the common acne is of moderate to moderately severe intensity.
31. The regime or regimen according to claim 28, wherein the composition is a gel.
32. The regime or regimen according to claim 29, wherein the composition is a gel.
33. The regime or regimen according to claim 30, wherein the composition is a gel.
34. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, comprising topically administering to said individual an effective amount of a pharmaceutical composition which is a gel consisting of 0.3% by weight of adapalene, carbomer 940, disodium edetate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
35. The method according to claim 34, wherein said individual is afflicted with common acne.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section, wherein
when growing the layer on the upper clad layer from a crystal interface where crystal composition on the upper clad layer of the light-emitting section changes in a lattice mismatching state in which the absolute value of a lattice matching factor aa between fore and hind crystals of the crystal interface is not lower than 0.25%, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
2. A method for producing a semiconductor light-emitting device as claimed in claim 1, wherein
the layer grown on the upper clad layer of the light-emitting section includes at least one of a current diffusion layer and a current stopping layer.
3. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between a valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer in an energy position prior to the formation of a junction, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
4. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between a valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer in an energy position prior to the formation of a junction, wherein
when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
5. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between the valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer is satisfied in an energy position prior to the formation of a junction, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer and when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of the lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
6. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
7. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
8. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer and when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of the lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
9. A method for producing a semiconductor light-emitting device as claimed in claim 3, wherein the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
10. A method for producing a semiconductor light-emitting device as claimed in claim 4, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
11. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
12. A method for producing a semiconductor light-emitting device as claimed in claim 6, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current is stopping layer.
13. A method for producing a semiconductor light-emitting device as claimed in claim 7, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
14. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
15. A method for producing a semiconductor light-emitting device as claimed in claim 3, wherein
the intermediate layer is comprised of two or more layers.
16. A method for producing a semiconductor light-emitting device as claimed in claim 4, wherein
the intermediate layer is comprised of two or more layers.
17. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein
the intermediate layer is comprised of two or more layers.
18. A method for producing a semiconductor light-emitting device as claimed in claim 6, wherein
the intermediate layer is comprised of two or more layers.
19. A method for producing a semiconductor light-emitting device as claimed in claim 7, wherein
the intermediate layer is comprised of two or more layers.
20. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
the intermediate layer is comprised of two or more layers.
21. A method for producing a semiconductor light-emitting device as claimed in claim 15, wherein
when growing an (n1)-th intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to an n-th grown intermediate layer of the intermediate layers, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
22. A method for producing a semiconductor light-emitting device as claimed in claim 18, wherein when growing an (n1)-th intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to an n-th grown intermediate layer of the intermediate layers, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
23. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 mh except when starting the growth.
24. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 pinh except when starting the growth.
25. A method for producing a semiconductor light-emitting device as claimed in claim 15, wherein
at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 mh except when starting the growth.
26. A method for producing a semiconductor light-emitting device as claimed in claim 23, wherein at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 nh except when starting the growth.
27. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AlxGa1-x)yIn1-yP (0x1, 0y1).
28. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AxGa1-x) yIn1-yP (0x1, 0y1).
29. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1)
30. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
31. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
32. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
33. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
34. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
35. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
36. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.
37. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.
38. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.