1. A method for producing a semiconductor device, comprising the steps of:
coating a composition for forming a lithographic resist underlayer film on a semiconductor substrate and performing baking to form a resist underlayer film;
coating a composition for forming a resist film on the underlayer film and forming a resist film;
exposing the resist film;
developing the resist film after the exposure to obtain a patterned resist film;
etching the resist underlayer film according to the patterned resist film to obtain a patterned resist underlayer film; and
processing the semiconductor substrate according to the patterned resist film and the patterned resist underlayer film,
wherein the composition for forming a resist underlayer film comprises as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below:
(R1)aSi(R2)(3-a)b(R3)\u2003\u2003Formula (1)
where R3 is a group of Formula (2), (3), or (4):
(in Formulae (2), (3), and (4), at least one from among R4, R5, and R6 is a group bonded to a silicon atom by a single bond or as a linking group; when R4 is not bonded to the silicon atom, R4 is a hydrogen atom, or an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof;
when R5 and R6 are not bonded to the silicon atom, each of R5 and R6 is independently a linear alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof;
when any of R4, R5 or R6 is a group bonded to the silicon atom as a linking group, the group bonded to the silicon atom is a divalent group obtained by removing one hydrogen atom from the respective group defined above; however, when R6 in Formula (3), R5 in Formula (4), and R6 in Formula (4) are bonded to the silicon atom, these groups are groups each bonded to the silicon atom as a linking group, rather than by a single bond);
each R1 is independently an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof; each R2 is independently an alkoxy group, an acyloxy group, or a halogen atom; a is integer of 0 to 2, b is integer of 1 to 3.
2. The method according to claim 1, wherein the hydrolyzable organosilane comprises at least one selected from a group consisting of a combination of at least one organosilicon compound selected from a group consisting of an organosilicon compound of Formula (5) below:
R1aSi(R2)4-a\u2003\u2003Formula (5)
(where each R1 is independently an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxyaryl group, an acyloxyaryl group, or a cyano group, or a combination thereof, and is a group bonded to the silicon atom by a Si\u2014C bond; each R2 is independently an alkoxy group, an acyloxy group, or a halogen atom; a is integer of 0 to 3), and
an organosilicon compound of Formula (6) below:
R1cSi(R2)3-c2Yb\u2003\u2003Formula (6)
(where R1 is an alkyl group, each R2 is independently an alkoxy group, an acyloxy group, or a halogen atom, Y is an alkylene group or an arylene group, b is integer of 0 or 1, and c is integer of 0 or 1), and the hydrolyzable organosilane of Formula (1), hydrolysates thereof, and hydrolytic condensates thereof.
3. The method according to claim 1, wherein the hydrolytic condensate of the hydrolyzable organosilane of Formula (1), or the hydrolytic condensate of the hydrolyzable organosilane of Formula (1) and the organosilicon compound of Formula (5) is contained as a polymer.
4. The method according to claim 1, wherein the hydrolyzable organosilane of Formula (1) has a pKa value of 8.00 to 20.00.
5. The method according to claim 1, wherein the composition for forming a lithographic resist underlayer film further comprises an acid as a hydrolysis catalyst.
6. The method according to claim 1, wherein the composition for forming a lithographic resist underlayer film further comprises water.
7. A method for producing a semiconductor device, comprising the steps of:
forming an organic underlayer film on a semiconductor substrate;
coating a composition for forming a lithographic resist underlayer film on the organic underlayer film and performing baking to forrrl a resist underlayer film;
coating a composition for forming a resist film on the resist underlayer film and forming a resist film;
exposing the resist film;
developing the resist film after the exposure to obtain a patterned resist film;
etching the resist underlayer film according to the patterned resist film to obtain a patterned resist underlayer film;
etching the organic underlayer film according to the patterned resist underlayer film; and
processing the semiconductor substrate according to the patterned organic underlayer film,
wherein the composition for forming a lithographic resist underlayer film comprises as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below:
(R1)aSi(R2)(3-a)b(R3)\u2003\u2003Formula (1)
where R3 is a group of Formula (2), (3), or (4):
(in Formulae (2), (3), and (4), at least one from among R4, R5, and R6 is a group bonded to a silicon atom by a single bond or as a linking group; when R4 is not bonded to the silicon atom, R4 is a hydrogen atom, or an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof;
when R5 and R6 are not bonded to the silicon atom, each of R5 and R6 is independently a linear alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof;
when any of R4, R5 or R6 is a group bonded to the silicon atom as a linking group, the groin bonded to the silicon atom is a divalent group obtained by removing one hydrogen atom from the respective group defined above; however, when R6 in Formula (3), R5 in Formula (4), and R6 in Formula (4) are bonded to the silicon atom, these groups are groups each bonded to the silicon atom as a linking group, rather than by a single bond);
each R1 is independently an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, or a combination thereof; each R2 is independently an alkoxy group, an acyloxy group, or a halogen atom; a is integer of 0 to 2, b is integer of 1 to 3.
8. The method according to claim 7, wherein the hydrolyzable organosilane comprises at least one selected from a group consisting of a combination of at least one organosilicon compound selected from a group consisting of an organosilicon compound of Formula (5) below:
R1aSi(R2)4-a\u2003\u2003Formula (5)
(where each R1 is independently an alkyl group, an aryl group, an aralkyl group, an alkyl halide group, an aryl halide group, an aralkyl halide group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxyaryl group, an acyloxyaryl group, or a cyano group, or a combination thereof, and is a group bonded to the silicon atom by a Si\u2014C bond; each R2 is independently an alkoxy group, an acyloxy group, or a halogen atom; a is integer of 0 to 3), and
an organosilicon compound of Formula (6) below:
R1cSi(R2)3-c2Yb\u2003\u2003Formula (6)
(where R1 is an alkyl group, each R2 is independently an alkoxy group, an acyloxy group, or a halogen atom, Y is an alkylene group or an arylene group, b is integer of 0 or 1, and c is integer of 0 or 1), and the hydrolyzable organosilane of Formula (1), hydrolysates thereof, and hydrolytic condensates thereof.
9. The method according to claim 7, wherein the hydrolytic condensate of the hydrolyzable organosilane of Formula (1), or the hydrolytic condensate of the hydrolyzable organosilane of Formula (1) and the organosilicon compound of Formula (5) is contained as a polymer.
10. The method according to claim 7, wherein the hydrolyzable organosilane of Formula (1) has a pKa value of 8.00 to 20.00.
11. The method according to claim 7, wherein the composition for forming a lithographic resist underlayer film further comprises an acid as a hydrolysis catalyst.
12. The method according to claim 7, wherein the composition for forming a lithographic resist underlayer film further comprises water.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for detecting a bot in a Massive Multiplayer Online Role Playing Game (MMORPG), the method comprising:
counting the number of packets having an inter-arrival time over a first threshold (itthr1) among consecutive packets inputted from a user within a window having a predetermined size;
counting the number of packets having the inter-arrival time over a second threshold (itthr2) among the consecutive packets; and
determining the user as a bot when the number of packets having the inter-arrival time over the first threshold (itthr1) is less than a third threshold (itrt1), or a ratio of the number of packets having the inter-arrival time over the second threshold (itthr2) and the number of packets having the inter-arrival time over the first threshold (itthr1) is more than a fourth threshold (itrt2).
2. A method for detecting a bot in a Massive Multiplayer Online Role Playing Game (MMORPG), the method comprising:
counting the number of packets having a data length over a first threshold (dlthr1) among consecutive packets inputted from a user within a window having a predetermined size;
counting the number of packets having the data length over a second threshold (dlthr2) among the consecutive packets; and
determining the user as a bot when the number of packets having the data length over the first threshold (dlthr1) is less than a third threshold (dlrt1), and the number of packets having the data length over the second threshold (dlthr2) is less than a fourth threshold (dlrt2).