What is claimed is:
1. An inside handle illuminator comprising:
an inside handle vessel;
a lamp unit having a light source for illuminating an inside handle portion of said inside handle vessel from a back surface side of said inside handle vessel; and
a fixing device for fixing said lamp unit to said inside handle vessel.
2. An illuminator according to claim 1, wherein said fixing device makes at least one part of said inside handle vessel engage with at least one part of said lamp unit so as to fix said lamp unit to said inside handle vessel.
3. An illuminator according to claim 2, wherein said fixing device comprises one recess or protrusion provided in said inside handle vessel; and another protrusion or recess provided in said lamp unit, and engageable with said recess or protrusion provided in said inside handle vessel.
4. An illuminator according to claim 1, wherein said light source is constituted by an LED.
5. An inside handle illuminator comprising:
an inside handle vessel having first and second plug in portions formed in a back surface of said inside handle vessel; and
an LED unit including an LED for illuminating an inside handle portion from a back surface side of said inside handle vessel, said LED unit having first and second protrusions;
wherein said first protrusion is plugged in said first plug-in portion, and said second protrusion is plugged in said second plug-in portion, whereby said LED unit is fixed to said inside handle vessel.
6. An inside handle illuminator according to claim 5, wherein:
said first and second plug-in portions are formed as a recess and a through hole respectively;
lock means is provided in a forward end portion of said second protrusion; and
when said second protrusion is plugged in said second plug-in portion, said second protrusion is locked on a circumferential wall of said second plug-in portion by said lock means so that said LED unit is fixed to said inside handle vessel.
7. An illumination module comprising:
a vessel;
a lamp unit having a light source; and
a fixing device for fixing said lamp unit to said vessel;
wherein said lamp unit is fixed to said vessel so that said light source illuminates said vessel inside from a back surface side of said vessel.
8. An illumination module according to claim 7, wherein said fixing device makes at least two parts of said vessel engage with at least two parts of said lamp unit so as to fix said lamp unit to said vessel.
9. An illumination module according to claim 8, wherein said fixing device comprises recess provided in said vessel; and another protrusion provided in said lamp unit, and engageable with said recess provided in said vessel.
10. An illumination module according to claim 7, wherein said light source is constituted by an LED.
11. An illumination module according to claim 8, wherein one engagement direction between one of said two parts of said vessel and one of said two parts of said lamp unit is substantially orthogonal to another engagement direction between another part of said vessel and another part of said lamp unit.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing an SOI wafer in which a thickness of an SOI layer is increased by growing an epitaxial layer on the SOI layer of the SOI wafer having an oxide film and the SOI layer formed on a base wafer, wherein the epitaxial growth is performed in such a manner that a reflectivity of a surface of the SOI wafer on which the epitaxial layer is grown in a wavelength region of a heating light at the start of the epitaxial growth falls within the range of 30% to 80%.
2. The method for manufacturing an SOI wafer according to claim 1, wherein the reflectivity of the surface of the SOI wafer on which the epitaxial layer is grown is set to fall within the range of 30% to 80% by adjusting a thickness of the oxide film and a thickness of the SOI layer, respectively.
3. The method for manufacturing an SOI wafer according to claim 1, wherein the SOI wafer on which the epitaxial layer is grown is fabricated by ion-implanting a hydrogen ion, a rare gas ion, or a mixed gas ion containing these ions from a surface of a bond wafer to form an ion implanted layer in the wafer, closely contacting an ion implanted surface of the bond wafer with a surface of the base wafer through the oxide film, and then performing a heat treatment to delaminate the bond wafer in a thin film with the ion implanted layer being used as a cleavage plane.
4. An SOI wafer manufactured based on the method for manufacturing an SOI wafer according to claim 1.
5. The method for manufacturing an SOI wafer according to claim 2, wherein the SOI wafer on which the epitaxial layer is grown is fabricated by ion-implanting a hydrogen ion, a rare gas ion, or a mixed gas ion containing these ions from a surface of a bond wafer to form an ion implanted layer in the wafer, closely contacting an ion implanted surface of the bond wafer with a surface of the base wafer through the oxide film, and then performing a heat treatment to delaminate the bond wafer in a thin film with the ion implanted layer being used as a cleavage plane.
6. An SOI wafer manufactured based on the method for manufacturing an SOI wafer according to claim 2.
7. An SOI wafer manufactured based on the method for manufacturing an SOI wafer according to claim 3.
8. An SOI wafer manufactured based on the method for manufacturing an SOI wafer according to claim 5.