1. A method of using a WLAN and satellite enabled device is to detect WLAN access points (APs) that have moved, the method comprising:
detecting WLAN APs in range of the WLAN and satellite enabled device;
accessing a reference database to obtain a reference location of each WLAN AP;
obtaining satellite measurements from at least two satellites to provide a plurality of possible SPS location solutions of the device;
calculating a distance between each reference WLAN AP location and the possible SPS location solutions; and
if the distance between the reference WLAN AP location and the SPS location solutions is far, determining that the WLAN AP location in the reference database is not correct.
2. The method of claim 1, comprising notifying the reference database that the WLAN AP location is not correct.
3. The method of claim 1, comprising updating the reference database’s location for the WLAN AP.
4. The method of claim 1, wherein the possible SPS location solutions of the device comprises a region of possible location solutions for the device.
5. The method of claim 1, wherein the reference WLAN AP location is far from the SPS locations solutions if the distance is an order of magnitude above the coverage area of the AP.
6. The method of claim 1 comprising measuring a consistency between the satellite measurements and the WLAN AP reference location.
7. The method of claim 6, wherein the WLAN AP reference location consistency with the satellite information is measured by applying each of the WLAN AP reference locations to the satellite measurements and calculating an internal SPS receiver clock bias for each WLAN AP reference location.
8. The method of claim 7, wherein a consistency of the internal SPS receiver clock bias for each of the WLAN AP locations is used as an indication of distance between the WLAN AP location and the possible SPS location solutions of the device.
9. The method of claim 8, wherein calculating the consistency of the internal SPS receiver clock bias for each WLAN AP reference location comprises calculating the standard deviation or the mean square error of the internal SPS receiver clock bias.
10. The method of claim 6 comprising calculating an internal SPS receiver clock bias by considering the WLAN AP reference location as an initial position.
11. A system for determining the location of a WLAN and satellite enabled device to detect moved WLAN access points (APs) comprising:
a hybrid positioning module comprising:
a WLAN module for receiving information from one or more WLAN access points;
a satellite positioning module for providing a plurality of possible device locations of the device based on satellite information from at least two different satellites;
a reference database for storing reference locations for each WLAN AP; and
logic contained in the positioning module for calculating a distance between each reference WLAN AP location and the possible SPS location solutions and if the distance between the reference WLAN AP location and the SPS location solutions is far, determining that the reference WLAN AP location is incorrect.
12. The system of claim 11, wherein the possible SPS location solutions of the device comprises a region of possible location solutions for the device.
13. The system of claim 11, wherein the reference WLAN AP location is far from the SPS locations solutions if the distance is an order of magnitude above the coverage area of the AP.
14. The system of claim 11, wherein the logic is configured to measure a consistency between the satellite measurements and the WLAN AP reference location.
15. The system of claim 14, wherein the WLAN AP reference location consistency with the satellite information is measured by applying each of the WLAN AP reference locations to the satellite measurements and calculating an internal SPS receiver clock bias for each WLAN AP reference location.
16. The system of claim 15, wherein a consistency of the internal SPS receiver clock bias for each of the WLAN AP locations is used as an indication of distance between the WLAN AP location and the possible SPS location solutions of the device.
17. The system of claim 16, wherein calculating the consistency of the internal SPS receiver clock bias for each WLAN AP reference location comprises calculating the standard deviation or the mean square error of the internal SPS receiver clock bias.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method of fabricating a semiconductor device, comprising the steps of:
sequentially forming an insulating material layer and an anti-etch film on the entire semiconductor substrate;
making the anti-etch film and the insulating material layer remained only in an isolation region through an etch process, thus forming a device isolation film made of an insulating material layer; and
forming an active region layer where the semiconductor device will be formed between the device isolation films.
2. The method as claimed in claim 1, wherein the anti-etch films are made of a silicate film or a silicon nitride film.
3. The method as claimed in claim 2, wherein the silicate film is made of AlSixOy, HfSixOy, YSixOy, CeSixOy or TaSixOy, or a mixture of at least more than one of them.
4. The method as claimed in claim 3, wherein the composition ratio X is 0.0510 and the composition ratio Y is 0.0510.
5. The method as claimed in claim 1, further comprising the step of before the etch process is implemented after the anti-etch film is formed or before the active region layer is formed after the etch process is performed, implementing an annealing process under an atmosphere of N2, O2, O3, H2, D2, H2O, D2O, NO, N2O or a mixed gas of them at a temperature of 6001000 C. for 20 seconds60 minutes.
6. The method as claimed in claim 1, wherein the active region layer is formed by means of a selective epitaxial growth process and is formed by growing a silicon layer, a silicon-germanium layer, or the silicon layer after the silicon-germanium layer is grown.
7. The method as claimed in claim 6, wherein in the selective epitaxial growth process, SiH4 or SiH2Cl2 and Cl2 gases are used as a reaction gas.
8. The method as claimed in claim 1, further comprising the steps of after the active region layer is formed,
removing the active region layer that is formed higher than the device isolation film, by means of a chemical mechanical polishing process; and
implementing an annealing process in order to mitigate polishing damage and improve an interfacial characteristic between the device isolation film and the active region layer.
9. A method of fabricating a semiconductor device, comprising the steps of:
sequentially forming an insulating material layer and a high dielectric insulating film on the entire semiconductor substrate;
making the high dielectric insulating film and the insulating material layer remained only in an isolation region through an etch process, thus forming a device isolation film made of an insulating material layer; and
excessively growing an active region layer containing silicon on the semiconductor substrate between the device isolation films by means of a selective epitaxial growth process, whereby the active region layer is formed up to the top corner of the high dielectric insulating film, and anti-etch films are formed at the top corners of the device isolation film through reaction of silicon components of the active region layer and the high dielectric insulating film.
10. The method as claimed in claim 9, wherein the high dielectric insulating film is formed using Al2O3, HfO2, ZrO2, Y2O3, CeO2, Ta2O5 or a mixture of them.
11. The method as claimed in claim 9, wherein the anti-etch film is formed using a silicate film.
12. The method as claimed in claim 9, wherein the active region layer is formed by means of a selective epitaxial growth process and is formed by growing a silicon layer, a silicon-germanium layer, or the silicon layer after the silicon-germanium layer is grown.
13. The method as claimed in claim 12, wherein in the selective epitaxial growth process, SiH4 or SiH2Cl2 and Cl2 gases are used as a reaction gas.
14. The method as claimed in claim 9, further comprising the steps of after the active region layer is formed,
removing the active region layer that is formed higher than the device isolation film, by means of a chemical mechanical polishing process; and
implementing an annealing process in order to mitigate polishing damage and improve an interfacial characteristic between the device isolation film and the active region layer.