1. A thin film transistor, comprising:
a gate electrode;
a source electrode;
a drain electrode facing the source electrode;
an oxide semiconductor layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode; and
a gate insulating layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode,
wherein when a signal applied to the gate electrode is a turn-off signal, a voltage applied to the gate electrode has a negative value.
2. The thin film transistor of claim 1, wherein the thin film transistor is included in a gate driver of a display device.
3. The thin film transistor of claim 2, wherein the thin film transistor is directly connected with an output terminal of the gate driver, and the output terminal is connected with a gate line and outputs a gate signal.
4. The thin film transistor of claim 3, wherein the negative value is between about \u221220 V and about \u22123 V.
5. The thin film transistor of claim 4, wherein the oxide semiconductor layer includes indium gallium zinc oxide.
6. The thin film transistor of claim 1, wherein the oxide semiconductor layer is disposed on the gate electrode.
7. The thin film transistor of claim 1, wherein the gate electrode is disposed on the oxide semiconductor layer.
8. The thin film transistor of claim 1, further comprising an etching protection layer disposed on the oxide semiconductor layer and covering a channel area of the oxide semiconductor layer.
9. The thin film transistor of claim 1, wherein the gate electrode is wider than a channel area of the oxide semiconductor layer.
10. The thin film transistor of claim 9, wherein a thickness of the gate insulating layer is uniform in a portion of the gate insulating layer corresponding to the channel area.
11. The thin film transistor of claim 1, further comprising a floating metal layer disposed between the source electrode and the drain electrode.
12. The thin film transistor of claim 11, wherein the floating metal layer is electrically floated.
13. The thin film transistor of claim 12, wherein the floating metal layer overlaps a channel area of the oxide semiconductor layer.
14. The thin film transistor of claim 13, wherein the floating metal layer is disposed on a same layer as the source electrode and the drain electrode.
15. The thin film transistor of claim 14, wherein the floating metal layer has an island shape.
16. The thin film transistor of claim 15, further comprising an etching protection layer disposed between the floating metal layer and the oxide semiconductor layer.
17. The thin film transistor of claim 1, wherein a thickness of the gate insulating layer is uniform in a portion of the gate insulating layer corresponding to a channel area of the oxide semiconductor layer.
18. The thin film transistor of claim 17, wherein the negative value is between about \u221220V and about \u22123V.
19. The thin film transistor of claim 17, wherein the gate electrode is wider than the channel area of the oxide semiconductor layer.
20. The thin film transistor of claim 1, wherein when the gate electrode is applied with a negative voltage to turn off the thin film transistor, there is no conduction between the source electrode and the drain electrode.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of identifying a configuration of an object that satisfies a predetermined optimisation criterion under specified conditions, the method comprising the steps of:
(i) specifying a plurality of different object configurations;
(ii) for each specified object configuration, using a first simulation procedure to simulate the specified conditions so as to generate data that can be used to evaluate the object configuration against the optimisation criterion, wherein the first simulation procedure comprises iteratively calculating values of variables characterising the object configuration;
(iii) identifying a functional relationship between the data generated for each specified object configuration;
(iv) using the functional relationship and the optimisation criterion to select a data point, and identifying an object configuration corresponding thereto; and
(v) using a second simulation procedure, simulating the specified conditions in respect of the identified object configuration, wherein the second simulation procedure comprises iteratively calculating values of variables characterising the object configuration until the values satisfy a convergence criterion,
wherein, for at least one of the specified object configurations, the first simulation procedure is completed before the values calculated therein satisfy the convergence criterion used in the second simulation procedure.
2. A method according to claim 1, wherein, for at least one of the specified object configurations, the values calculated on completion of the first simulation procedure are less than 99% correlated with values calculated on completion of the second simulation procedure, using the same object configuration.
3. A method according to claim 1, wherein the method comprises completing the first simulation procedure when the values calculated therein satisfy a convergence criterion which is different to the convergence criterion used in the second simulation procedure.
4. A method according to claim 3, wherein the convergence criterion used in the first simulation procedure is applied by calculating a correlation coefficient indicative of correlation in respect of successive iterations of values of variables and determining whether the calculated correlation coefficient is substantially equal to a specified correlation coefficient.
5. A method according to claim 4, including calculating an average of a succession of two or more correlation coefficients and determining whether the calculated average is substantially equal to a specified value.
6. A method according to claim 3, wherein convergence criterion used in the first simulation procedure is applied separately to values calculated for each specified object configuration.
7. A method according to claim 3, wherein convergence criterion used in the first simulation procedure is applied collectively to values calculated for each specified object configuration.
8. A method according to claim 7, wherein the convergence criterion used in the first simulation procedure is applied by identifying a different functional relationship between data generated for each specified object configuration in different iterations, and applying the convergence criterion to the different functional relationships.
9. A method according to claim 8, in which the functional relationship comprises a plurality of gradients and the method includes evaluating at least one of the plurality of gradients in the different functional relationships.
10. A method according to claim 1, wherein said second simulation procedure comprises evaluating data generated in the second simulation procedure against the optimisation criterion, and selecting the identified object configuration corresponding to said data if the optimisation criterion is met.
11. A method according to claim 1, wherein said second simulation procedure comprises evaluating data generated in the second simulation procedure against the optimisation criterion, and if the data does not meet the optimisation criterion, the method includes adding the identified object configuration to the plurality of specified object configurations and repeating steps (iii) to (v) until the identified object configuration satisfies the optimisation criterion.
12. A method according to claim 1, wherein the object comprises an aircraft structure.
13. A method according to claim 12, wherein the object comprises a flap track fairing associated with an aircraft wing.
14. A method according to claim 12, in which the variables include lift and drag associated with the object.
15. A data processing system arranged to perform the method according to claim 1.
16. Computer software arranged to perform the method according to claim 1.
17. A data carrier on which is supported computer software arranged to perform the method according to claim 1.