1. An apparatus for use with a first data device, a second data device, and a third data device operable to generate one of directly and indirectly an interrupt signal and to disable one of directly and indirectly the interrupt signal, the apparatus comprising:
a switch connectable to said first data device, said second data device, and said third data device, said switch in a first state connecting said first data device and said second data device, said switch in a second state being operable, upon detection of the interrupt signal, to disconnect automatically said first data device to said third data device;
wherein said switch is operable to return to the first state from the second state automatically, upon said third data device disabling the interrupt signal;
the apparatus further comprising a fourth data device, wherein said first data device comprises point-to-point serial data circuit-terminating equipment, said second data device comprising a radio transceiver, and said third data device operable to communicate with said with said fourth data device over a physical layer, the physical layer comprising one of a satellite communications path and a line-of-sight communications path.
2. The apparatus according to claim 1, wherein said physical layer comprises a radio frequency path.
3. The apparatus according to claim 1, wherein said point-to-point serial data circuit-terminating equipment comprises one of a modem and a facsimile machine.
4. The apparatus according to claim 1, wherein said interrupt signal comprises one of a push-to-talk signal and a retransmit key-line signal, said switch being in the second state upon detection by said switch of one of said push-to-talk signal and said retransmit key-line signal.
5. A method comprising:
providing a first data device;
providing a second data device;
providing a third data device operable to generate one of directly and indirectly an interrupt signal and to disable one of directly and indirectly the interrupt signal;
providing a switch connectable to the first data device, the second data device, and the third data device, the switch in a first state connecting the first data device and the second data device, permitting communications therebetween;
detecting the interrupt signal by the switch and automatically transferring the switch into a second state by disconnecting automatically the first data device from the second data and connecting automatically thereafter the first data device to the third data device, permitting communication therebetween; returning the switch to the first state from the second state automatically, upon the third data device disabling the interrupt signal;
providing a fourth data device, wherein the first data device comprises point-to-point serial data circuit-terminating equipment, the second data device comprising a radio transceiver, and the third data device operable to communicate with the fourth data device over a physical layer, the physical layer comprising one of a satellite communications path and a line-of-sight communication path.
6. The method according to claim 5, wherein the physical layer comprises a radio frequency path.
7. The method according to claim 5, wherein the point-to-point serial data circuit-terminating equipment comprises one of a modem and a facsimile machine.
8. The method according to claim 5, wherein the interrupt signal comprises one of a push-to-talk signal and a retransmit key-line signal, the switch being in the second state upon detection by the switch of one of the push-to-talk signal and the retransmit key-line signal.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for forming a transducer comprising the steps of:
providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer, wherein said first layer is formed or provided by hydrogen ion delamination of a starting wafer;
doping said first layer to form a piezoresistive film;
etching said piezoresistive film to form at least one piezoresistor;
depositing or growing a metallization layer on said semiconductor-on-insulator wafer, said metallization layer including an electrical connection portion that is located on or is electrically coupled to said piezoresistor;
removing at least part of said second semiconductor layer to form a diaphragm, with said at least part of said piezoresistor being located on said diaphragm; and
joining said wafer to a package by melting a high temperature braze material or a glass frit material.
2. The method of claim 1 further comprising the steps of, prior to said providing of said semiconductor-on-insulator wafer, providing said starting wafer, bombarding said starting wafer with ions to define a sub-layer of microbubbles, separating said starting wafer along said sub-layer to provide said first layer, and depositing said first layer onto said insulating layer to form said semiconductor-on-insulator wafer.
3. The method of claim 1 wherein said first layer has a thickness less than about 5 microns.
4. The method of claim 1 wherein said first layer has a thickness less than about 0.5 microns.
5. The method of claim 1 wherein said first layer is single crystal silicon.
6. The method of claim 1 wherein said first layer is p-doped single crystal silicon.
7. The method of claim 1 wherein said first layer has a (100) crystal orientation.
8. The method of claim 1 wherein said removing step occurs after said providing, doping, etching and depositing or growing step, and wherein said etching step includes etching said piezoresistive film to form a plurality of piezoresistors arranged in a Wheatstone bridge.
9. The method of claim 1 wherein said diaphragm has a thickness of less than about 150 microns.
10. The method of claim 1 wherein said wafer is joined to said package by melting a high temperature braze material in the form of an InCuAg brazing material or a eutectic bonding material.
11. The method of claim 1 wherein said package includes an internal package space and said wafer is coupled to said package such that said wafer divides said internal package space into a first internal package space that is in fluid communication with the ambient environment and a second internal package space is substantially fluidly isolated from the ambient environment.
12. The method of claim 1 wherein said a package has an internal package space and a port for communication with the ambient environment, said package receiving said wafer in said internal package space such that said first layer of said wafer is substantially isolated from the ambient environment and said second layer of said wafer is substantially exposed to the ambient environment through said port.
13. The method of claim 1 further comprising a connecting component coupled to said package, and a wire electrically connecting said connecting component and said electrical connection portion such that an output of said transducer can be communicated externally.
14. The method of claim 13 wherein said connecting component is a pin that sealingly extends through said package, and is solid platinum, or platinum-coated.
15. The method of claim 1 wherein said diaphragm is generally flexible and configured to flex when exposed to a differential pressure thereacross, and wherein flexure of said diaphragm is configured to induce a change in an electrical property of said piezoresistor.
16. The method of claim 1 wherein said wafer is coupled to said package at an attachment joint, and wherein said transducer is configured such that when said transducer is exposed to a fluid whose pressure is to be measured, said fluid exerts a force that causes said attachment joint to be placed in compression.
17. The method of claim 1 further comprising a bond securing said wafer to said package, said bond being formed by a high temperature brazing preform metal that has a liquidus temperature of between about 650\xb0 C. and about 750\xb0 C., and has stable mechanical properties at about 500\xb0 C.
18. The method of claim 1 further including the step of growing or depositing a thermal oxide layer covering said piezoresistor.
19. The method of claim 1 wherein said transducer can withstand, and continue functioning when exposed to, a temperature of 500 degrees Celsius and a pressure of 600 psig.
20. A method for forming a transducer comprising the steps of:
providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer, wherein said first layer is formed or provided by hydrogen ion delamination of a starting wafer;
doping said first layer to form a piezoresistive or piezoelectric film;
etching said piezoresistive or piezoelectric film to form at least one piezoresistive or piezoelectric element;
depositing or growing a metallization layer on said semiconductor-on-insulator wafer, said metallization layer including an electrical connection portion that is located on or is electrically coupled to said piezoresistive or piezoelectric element; and
removing at least part of said second semiconductor layer to form a diaphragm, with said at least part of said piezoresistive or piezoelectric element being located on said diaphragm.