1. A method comprising:
polishing at least one aperture of a ceramic article, wherein the ceramic article is a component for a semiconductor processing chamber, wherein the polishing is based on flowing an abrasive media through the at least one aperture of the ceramic article, and wherein the abrasive media comprises a polymer base and a plurality of abrasive particles.
2. The method of claim 1, further comprising:
drilling through the ceramic article to produce the at least one aperture; and
reaming the at least one aperture with a reaming device to increase a diameter of the at least one aperture prior to performing the polishing.
3. The method of claim 2, wherein a first grit size of the drill is courser than a second grit size of the reaming device, wherein the first grit size of the drill is between about 100 grit and about 150 grit, and wherein the second grit size of the reaming device is between about 400 grit and about 800 grit.
4. The method of claim 1, further comprising:
periodically adjusting a flow direction of the abrasive media through the at least one aperture over a time duration, wherein a length of the time duration is between about 20 minutes and about 60 minutes.
5. The method of claim 1, wherein a diameter of the at least one aperture is between about 0.01 inches and about 0.1 inches.
6. The method of claim 1, wherein the ceramic article comprises at least one of Al2O3, AlN, SiO2, Y3Al5O12, Y4Al2O9, Y2O3, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12, YF3, Nd2O3, Er4Al2O9, ErAlO3, Gd4Al2O9, GdAlO3, Nd3Al5O12, Nd4Al2O9, NdAlO3, or a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3\u2014ZrO2.
7. The method of claim 1, wherein the plurality of abrasive particles comprises at least one of silicon carbide, diamond, or boron nitride.
8. The method of claim 1, wherein an average size of each of the plurality of abrasive particles is between 5 micrometers and 100 micrometers.
9. The method of claim 1, wherein the abrasive media further comprises an oil-based plasticizer.
10. The method of claim 1, wherein a viscosity of the abrasive media is between about 150,000 cP and about 750,000 cP.
11. A system comprising:
a mounting stage;
a clamp; and
a pump fluidly coupled to the mounting stage by a ceramic article disposed between the mounting stage and the clamp, wherein an abrasive media flow path from the mounting stage to the clamp is defined by an aperture of the ceramic article, and wherein the pump is to flow the abrasive media through the aperture to polish the aperture.
12. The system of claim 11, wherein the clamp is to apply a clamping pressure of between about 1,500 psi and about 2,500 psi to the ceramic article.
13. The system of claim 11, further comprising:
a rubber pad disposed between a surface of the ceramic article and the clamp.
14. The system of claim 11, wherein:
the abrasive media comprises a plurality of abrasive particles,
the plurality of abrasive particles comprises at least one of silicon carbide, diamond, or boron nitride, and
an average size of each of the plurality of abrasive particles is approximately 5 micrometers to 100 micrometers.
15. A chamber component comprising:
a ceramic body; and
a plurality of polished apertures in the ceramic body, wherein a roughness of the plurality of polished apertures is less than 32 \u03bcin.
16. The chamber component of claim 15, wherein at least one of the plurality of polished apertures has a first diameter at a first region and a second diameter at a second region, wherein the second diameter is less than the first diameter.
17. The chamber component of claim 15, wherein at least one of the plurality of polished apertures comprises at least one bend within the chamber component.
18. The chamber component of claim 15, wherein an opening of at least one of the plurality of apertures has a rounded edge.
19. The chamber component of claim 15, wherein the ceramic body comprises at least one of Al2O3, AlN, SiO2, Y3Al5O12, Y4Al2O9, Y2O3, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12, YF3, Nd2O3, Er4Al2O9, ErAlO3, Gd4Al2O9, GdAlO3, Nd3Al5O12, Nd4Al2O9, NdAlO3, or a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3\u2014ZrO2.
20. The chamber component of claim 15, wherein the chamber component comprises one of a showerhead gas distribution plate or a nozzle.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for making a light emitting diode structure, the method comprising:
providing, on a substrate, a semiconductor material that is configured to emit light about a central wavelength \u03bb in response to application of a potential across an active region bracketed by both an n-doped layer and a p-doped layer;
forming a non-perforated dielectric material layer region upon the p-doped layer of the semiconductor material, the non-perforated dielectric material layer region covering only a portion of the p-doped layer;
forming at least one Distributed Bragg Reflector (DBR) pair upon the dielectric material layer region;
forming a bonding pad structure, for receiving a wire bond during a wire bonding operation, over the dielectric material layer region and the at least one DBR pair, and wherein the bonding pad structure is in ohmic contact with the p-doped layer of the semiconductor material through a transparent ohmic contact layer.
2. The method as recited in claim 1, wherein the bonding pad structure comprises a metallic layer.
3. The method as recited in claim 1, wherein the semiconductor material comprises GaN.
4. The method as recited in claim 1, wherein the dielectric material comprises silicon dioxide.
5. The method as recited in claim 1, wherein the dielectric material comprises at least one material selected from the group consisting of:
silicon dioxide;
silicon monoxide;
MgF2; and
siloxane polymers.
6. The method as recited in claim 1, wherein the dielectric material has a thickness of approximately 1.75 \u03bb.
7. A method of fabricating a light emitting diode structure comprising:
forming a first portion of an electrode on a planar surface of a semiconductor material, the electrode for use in supplying a voltage potential across a light emitting region formed in the semiconductor, the first portion of the electrode for receiving a wire bond during a wire bonding operation, the first portion of the electrode formed over both a non-perforated transparent dielectric material layer and at least one Distributed Bragg Reflector (DBR) layer pair; and
forming a second portion of the electrode in ohmic contact with the planar surface of the semiconductor material, and wherein the relative disposition of the first portion of the electrode, the second portion of the electrode and the non-perforated transparent dielectric layer provide that current resulting from the application of the voltage potential flows around, and not through, the non-perforated dielectric material layer into the planar surface of the semiconductor material.
8. The method as recited in claim 7, wherein each layer of the DBR pair is optically transmissive and has a different index of refraction with respect to each other layer.
9. The method as recited in claim 7, wherein each layer of the DBR pair has a thickness that is a multiple of approximately \xbc \u03bb.
10. The method as recited in claim 7, wherein the non-perforated dielectric layer and the electrode make physical contact to the planar surface of the semiconductor material via an ITO layer.
11. The method as recited in claim 7, wherein the electrode makes electrical contact to the semiconductor via an ITO layer.
12. A device comprising:
means for emitting light, the means for emitting light comprising a generally planar semiconductor material with a first side exposing both a p-doped semiconductor layer surface and an n-doped semiconductor layer surface that extends under the p-doped semiconductor layer, and which collectively bracket an active region for emitting light from the p-doped semiconductor layer surface;
means for providing a bonding location for a wire bond to be used in applying a potential to the p-doped semiconductor layer surface;
means for providing a continuous region of electrical insulation formed upon the means for emitting light;
at least one Distributed Bragg Reflector (DBR) pair formed upon the means for providing a continuous region of electrical insulation; and
wherein the means for providing a bonding location for the wire bond is physically separated from the means for emitting light by the continuous region of electrical insulation, and ohmic contact between the bonding location for the wire bond and the means for emitting light is provided by an ohmic contact means comprising a layer of a transparent ohmic conductor material contacting both the means for emitting light and the means for providing the bonding location.