1. A formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups.
2. The formulation according to claim 1, wherein the reactive group comprises a hydroxyl portion or an olefinic portion.
3-23. (canceled)
24. The formulation according to claim 1, wherein the polycycloolefinic polymer is a norbornene-type polymer having one or more distinct types of repeating units of Formula I
wherein Z is selected from \u2014CH2\u2014, \u2014CH2\u2014CH2\u2014 or \u2014O\u2014, m is an integer from 0 to 5, each of R1, R2, R3 and R4 are independently selected from H, a C1 to C25 hydrocarbyl, a C1 to C25 halohydrocarbyl or a C1 to C25 perhalocarbyl group, and wherein in at least one repeating unit one or more of R1-4 denote or comprise a reactive group.
25. The formulation according to claim 1, wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
where Y is alkyl or alkoxy with 1 to 20C atoms or alkylcarbonyl with 2 to 20C atoms, n is an integer from 0 to 8, a and b are independently of each other an integer from 0 to 7, wherein a+b\u22667, and c and d are independently of each other 0 or 1.
26. The formulation according to claim 25, wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
where n1 is 0, 1, 2, 3, 4 or 5, a and b are independently of each other an integer from 0 to 7, and wherein a+b\u22667.
27. The formulation according to claim 25, wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
NB
1
MeNB
2
BuNB
3
HexNB
4
OctNB
5
DecNB
6
CNB
7
PNB
8
PENB
9
PBNB
10.
28. The formulation according to claim 26, wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
NB
1
MeNB
2
BuNB
3
HexNB
4
OctNB
5
DecNB
6
CNB
7
PNB
8
PENB
9
PBNB
10.
29. The formulation according to claim 26, wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
NB
1
MeNB
2
BuNB
3
HexNB
4
OctNB
5
DecNB
6
CNB
7
PNB
8
PENB
9
PBNB
10.
30. The formulation according to claim 1, wherein the OSC comprises a small molecule.
31. The formulation according to claim 30, wherein the OSC comprises an oligoacene that is optionally substituted with two or more alkylsilylethynyl groups.
32. The formulation according to claim 1, further comprising one or more organic solvents.
33. The formulation according to claim 32, wherein the organic solvent is selected from cyclohexylene, mesitylene, xylene, diethylbenzene, indane and tetralin.
34. An OSC layer obtained through the use of a formulation according to claim 1.
35. A process of preparing an OSC layer, comprising depositing a formulation according to claim 1 onto a substrate and, in case the formulation comprises a solvent, removing the solvent.
36. An organic electronic (OE) device comprising an OSC layer being obtained through the use of a formulation according to claim 1, said OE device further comprising a dielectric or passivation layer obtained by vapor deposition of a p-xylylene onto said OSC layer.
37. A process of prepring an OE device according to claim 36, comprising providing a dielectric or passivation layer obtained by vapor deposition of a p-xylylene onto said OSC layer.
38. A process of preparing an OE device according to claim 36, comprising
depositing a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups onto a substrate to form an OSC layer, and if the formulation includes a solvent, removing the solvent,
optionally annealing the OSC layer, and
depositing a layer of a p-xylylene onto the OSC layer by vapor deposition.
39. The organic electronic device according to claim 36, which is an Organic Field Effect Transistor (OFET), Organic Thin Film Transistor (OTFT), Organic Light Emitting Diode (OLED) or Organic Photovoltaic (OPV) device or Organic Photodetector (OPD).
40. The organic electronic device according to claim 39, which is a top gate OFET or bottom gate OFET.
41. The top gate OFET according to claim 40, which comprises a substrate (1), source and drain electrodes (2a, 2b), an OSC layer (3) obtained through the use of a formulation according to claim 24, a dielectric layer (4) comprising a poly(p-xylylene) and serving as gate insulator, and gate electrode (5).
42. A process for preparing an OFET according to claim 41, which comprises:
forming source and drain electrodes (2a,2b) on a substrate (1),
forming an OSC layer (3) from a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups on the source and drain electrodes (2a,2b),
forming a dielectric layer (4) by vapor deposition of a p-xylylene on the OSC layer (3),
forming a gate electrode (5) on the dielectric layer (4).
43. The bottom gate OFET according to claim 40, which comprises a substrate (1), a gate electrode (5), a dielectric layer (4) serving as gate insulator, source and drain electrodes (2a, 2b), an OSC layer (3) obtained through the use of a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups, and a passivation layer (6) comprising a polyp-xylylene).
44. A process for preparing an OFET according to claim 43, which comprises:
forming a gate electrode (5) on a substrate (1),
forming a dielectric layer (4) on the the substrate (1) and the gate electrode (5),
forming source and drain electrodes (2a,2b) on the dielectric layer (4).
forming an OSC layer (3) from a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups on the source and drain electrodes (2a,2b) and the dielectric layer (4),
forming a passivation layer (6) by vapor deposition of a p-xylylene on the OSC layer (3).
45. A product or assembly comprising an OE device according to claim 36, which is an Integrated Circuit (IC), a Radio Frequency Identification (RFID) tag, a security marking or security device containing an RFID tag, a Flat Panel Display (FPD), a backplane of an FPD, a backlight of an FPD, an electrophotographic device, an electrophotographic recording device, an organic memory device, a pressure sensor, an optical sensor, a chemical sensor, a biosensor or a biochip.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A transition metal precursor comprising a composite transition metal compound represented by Formula 1, as a transition metal precursor used in the preparation of a lithium-transition metal composite oxide:
M(OH1\u2212x)2\u2003\u2003(1)
wherein:
M is two or more selected from the group consisting of Ni, Co, Mn, Al, Cu, Fe, Mg, B, Cr and the transition metals of 2 period in the Periodic Table of the Elements; and
0<x<0.5.
2. The transition metal precursor according to claim 1, wherein an oxidation number of the M in Formula 1 approximates to an oxidation number of a transition metal in the lithium-transition metal composite oxide.
3. The transition metal precursor according to claim 2, wherein an oxidation number of the M in Formula 1 approximates to +3.
4. The transition metal precursor according to claim 1, wherein the x in Formula 1 has a value of 0.2\u2266x<0.5.
5. The transition metal precursor according to claim 1, wherein the x in Formula 1 has a value of 0.3\u2266x<0.5.
6. The transition metal precursor according to claim 1, wherein the M contains one or more transition metals selected from the group consisting of Ni, Co and Mn.
7. The transition metal precursor according to claim 6, wherein the M contains two transition metals selected from the group consisting of Ni, Co and Mn or all of them.
8. The transition metal precursor according to claim 1, wherein the composite transition metal compound is a composite transition metal compound represented by Formula 2:
NibMncCo1\u2212(b+c+d)M\u2032d(OH1\u2212x)2\u2003\u2003(2)
wherein:
0.3\u2266b\u22660.9;
0.1\u2266c\u22660.6;
0\u2266d\u22660.1;
b+c+d\u22661;
0<x<0.5; and
M\u2032 is selected from the group consisting of Al, Mg, Cr, Ti, Si and any combination thereof.
9. The transition metal precursor according to claim 1, wherein the composite transition metal compound has a content of 30% by weight or higher, based on the total weight of the transition metal precursor.
10. The transition metal precursor according to claim 9, wherein the composite transition metal compound has a content of 50% by weight or higher, based on the total weight of the transition metal precursor.
11. A composite transition metal compound represented by Formula 1:
M(OH1\u2212x)2\u2003\u2003(1)
wherein M and x are as defined in claim 1.
12. A lithium-transition metal composite oxide prepared by using the transition metal precursor of claim 1.
13. A lithium secondary battery comprising the lithium-transition metal composite oxide of claim 12 as a cathode active material.