What is claimed is:
1. A curable coating composition comprising
a. a resinous binder comprising:
i. a reaction product of an epoxy-containing polymer with a compound containing phosphorus acid groups, the reaction product having reactive functional groups,
ii. a curing agent having functional groups reactive with the functional groups of (i);
b. an electroconductive pigment dispersed in (a) such that the weight ratio of b to (i) plus (ii) is within the range of 0.5 to 9.0:1,
the curable coating composition being characterized such that when it is deposited and cured on a metal substrate, the cured coating is weldable.
2. The curable coating composition according to claim 1 in which the epoxy-containing polymer is a polyglycidyl ether of a polyhydric phenol.
3. The curable coating composition according to claim 2 where the polyhydric phenol is Bisphenol A.
4. The curable coating composition according to claim 1 wherein the molecular weight of the epoxy-containing polymer is 220-4500 based on epoxy equivalent multiplied by the epoxy functionality.
5. The curable coating composition according to claim 1 wherein the compound containing phosphorus acid groups is selected from the group comprising phosphoric acid, a phosphonic acid, and phosphorous acid.
6. The curable coating composition according to claim 1 wherein the equivalent ratio of the compound containing phosphorus acid groups to epoxy-containing polymer is within the range of 0.5 to 3.5:1.
7. The curable coating composition according to claim 1 wherein the functional groups of (i) are hydroxyl groups or hydroxyl and epoxy groups.
8. The curable coating composition according to claim 1 wherein the curing agent is selected from the group comprising aminoplast resins, polyisocyanates, polyacids, organometallic complexed materials, polyamines, and polyamides.
9. The curable coating composition according to claim 8 wherein the curing agent is an aminoplast.
10. The curable coating composition according to claim 1 wherein said electroconductive pigment is selected from the group comprising zinc, aluminum, iron, graphite, diiron phosphide, tungsten, stainless steel, and mixtures thereof.
11. The curable coating composition according to claim 1 wherein the weight percent of (i) based on the total weight of resinous binder is from 50 to 90 percent.
12. The curable coating composition according to claim 1 wherein the weight percent of (ii) based on the total weight of resinous binder is from 10 to 50 percent.
13. The curable coating composition according to claim 1 wherein the weight percent of (a) based on the total weight of (a) plus (b) is from 10 to 55 percent.
14. The curable coating composition according to claim 1 wherein the weight percent of (b) based on the total weight of (a) plus (b) is from 45 to 90 percent.
15. The curable coating composition according to claim 1 further comprising corrosion resistant pigments.
16. An aqueous-based curable coating composition comprising:
a. a resinous binder comprising
i. a reaction product of an epoxy-containing polymer with a compound containing phosphorus acid groups, the reaction product having reactive functional groups,
ii. a curing agent having functional groups reactive with the functional groups of (i);
b. an electroconductive pigment dispersed in (a) such that the weight ratio of b to (i) plus (ii) is within the range of 0.5 to 9.0:1; and
c. water,
the coating composition being characterized such that when it is deposited and cured on a metal substrate, the cured coating is weldable.
17. The coating composition according to claim 16 further comprising stabilizers, dispersants, and thickeners.
18. The coating composition according to claim 17 wherein the stabilizerdispersant is potassium tripolyphosphate.
19. The coating composition according to claim 16 further comprising an amine.
20. The coating composition according to claim 16 further comprising corrosion inhibiting pigments.
21. An organic solvent-based curable coating composition comprising:
a. a resinous binder comprising
i. a reaction product of an epoxy-containing polymer with a compound containing phosphorus acid groups, the reaction product having reactive functional groups,
ii. a curing agent having functional groups reactive with the functional groups of (i);
b. an electroconductive pigment dispersed in (a) such that the weight ratio of b to (i) plus (ii) is within the range of 0.5 to 9.0:1; and
C. an organic solvent,
the curable coating composition being characterized such that when it is deposited cured on a metal substrate, the cured coating is weldable.
22. The coating composition according to claim 21 further comprising corrosion resistant pigments.
23. The coating composition according to claim 21 further comprising an amine.
24. The coating composition according to claim 21 wherein the amine is N-methyl or N-ethyl morpholine.
25. A process for coating a continuous metal sheet comprising:
a. applying directly to the metal sheet shortly after it is formed and at a temperature of 20 to 150 C., a curable coating composition comprising:
i. a resinous binder comprising
(A) a reaction product of an epoxy-containing polymer with a compound containing phosphorus acid groups, the reaction product having reactive functional groups,
(B) a curing agent having functional groups reactive with the functional groups of (A);
ii. an electroconductive pigment dispersed in (i) such that the weight ratio of (ii) to (A) plus (B) is within the range of 0.5 to 9.0:1,
the curable coating composition being characterized such that when it is deposited and cured on a metal substrate, the cured coating is weldable; and
b. drying the coating composition on the metal sheet.
26. The process according to claim 25 wherein the metal sheet is selected from the group comprising ferrous metals, non-ferrous metals, and combinations thereof.
27. A process for coating a continuous metal sheet comprising:
a. unwinding the metal sheet from a metal coil and passing the metal sheet in a substantially continuous manner through a cleaning station, a coating station, and a curing station;
b. applying to the metal sheet at the coating station a curable coating composition comprising:
i. a resinous binder comprising:
(A) a reaction product of an epoxy-containing polymer with a compound containing phosphorus acid groups, the reaction product having reactive functional groups,
(B) a curing agent having functional groups reactive with the functional groups of (A);
ii. an electroconductive pigment dispersed in (i) such that the weight ratio of (ii) to (A) plus (B) is within the range of 0.5 to 9.0:1; and
c. curing the coating composition applied to the metal sheet in step (b) as the coated metal sheet passes through the curing station.
28. A process according to claim 27 further comprising galvanizing the metal sheet and then immediately performing the step of applying the curable coating composition.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor device, comprising the steps of:
carrying a substrate having an insulator film on the surface into a processing chamber;
introducing silicon-based gas into the processing chamber to form silicon grains on the insulator film formed on the surface of the substrate; and
carrying the processed substrate out from the processing chamber; wherein
before the introduction of the silicon-based gas, dopant gas is introduced into the processing chamber.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the dopant gas is introduced into the processing chamber also during the introduction of the silicon-based gas.
3. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of cleaning the surface of the insulator film formed on the surface of the substrate before the step of carrying the substrate into the processing chamber.
4. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of cleaning the surface of the insulator film formed on the surface of the substrate with a dilute hydrofluoric solution before the step of carrying the substrate into the processing chamber.
5. The method for manufacturing a semiconductor device according to claim 1, wherein in the process of forming silicon grains, island-pattern silicon grains are formed by stopping the growth of silicon grains before the silicon grains come into contact with one another.
6. The method for manufacturing a semiconductor device according to claim 1, wherein in the process of forming silicon grains, continuous silicon grains are formed by continuing the growth of silicon grains until the silicon grains come into contact with one another.
7. The method for manufacturing a semiconductor device according to claim 1, wherein the silicon-based gas is SiH4 or Si2H6 and the dopant gas is PH3, B2H6, BCl3, or AsH3.
8. A method for manufacturing a semiconductor device, comprising the steps of:
carrying a substrate having an insulator film on the surface into a processing chamber;
introducing silicon-based gas into the processing chamber to form island-pattern silicon grains on the insulator film formed on the surface of the substrate; and
carrying the processed substrate out from the processing chamber; wherein
before andor during the introduction of the silicon-based gas, dopant gas is introduced into the processing chamber.
9. The method for manufacturing a semiconductor device according to claim 8, further comprising the step of cleaning the surface of the insulator film formed on the surface of the substrate before the step of carrying the substrate into the processing chamber.
10. A substrate processing apparatus comprising:
a processing chamber for processing a substrate having an insulator film on the surface;
a silicon gas feed system for feeding silicon-based gas into the processing chamber;
a dopant gas feed system for feeding dopant gas into the processing chamber;
an exhaust system for exhausting an interior of the processing chamber;
a heater for heating the substrate in the processing chamber; and
a controller that controls the silicon gas feed system, the dopant gas feed system and the heater so as to feed silicon-based gas into the processing chamber to form silicon grains on the insulator film formed on the surface of the substrate, and to feed dopant gas into the processing chamber before the introduction of the silicon-based gas.
11. The substrate processing apparatus according to claim 10, wherein the controller controls the silicon gas feed system, the dopant gas feed system and the heater so as to feed dopant gas into the processing chamber also during the introduction of the silicon-based gas.
12. A substrate processing apparatus comprising:
a processing chamber for processing a substrate having an insulator film on the surface;
a silicon gas feed system for feeding silicon-based gas into the processing chamber;
a dopant gas feed system for feeding dopant gas into the processing chamber;
an exhaust system for exhausting an interior of the processing chamber;
a heater for heating the substrate in the processing chamber; and
a controller that controls the silicon gas feed system, the dopant gas feed system and the heater so as to feed silicon-based gas into the processing chamber to form island-pattern silicon grains on the insulator film formed on the surface of the substrate, and to feed dopant gas into the processing chamber before andor during the introduction of the silicon-based gas.